The status of SiC bulk growth from an industrial point of view
Müller, St.G., Glass, R.C., Hobgood, H.M., Tsvetkov, V.F., Brady, M., Henshall, D., Jenny, J.R, Malta, D., Carter, C.H.
Published in Journal of crystal growth (01.04.2000)
Published in Journal of crystal growth (01.04.2000)
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Journal Article
Conference Proceeding
Electron paramagnetic resonance studies of a carbon vacancy-related defect in as-grown 4H–SiC
Konovalov, V.V, Zvanut, M.E, Tsvetkov, V.F, Jenny, J.R, Müller, St.G, Hobgood, H.McD
Published in Physica. B, Condensed matter (01.12.2001)
Published in Physica. B, Condensed matter (01.12.2001)
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Journal Article
Large area SiC substrates and epitaxial layers for high power semiconductor devices — An industrial perspective
Müller, St.G., Brady, M.F., Burk, A.A., Hobgood, H.McD, Jenny, J.R., Leonard, R.T., Malta, D.P., Powell, A.R., Sumakeris, J.J., Tsvetkov, V.F., Carter, C.H.
Published in Superlattices and microstructures (01.10.2006)
Published in Superlattices and microstructures (01.10.2006)
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