A 25-ns 16K CMOS PROM using a four-transistor cell and differential design techniques
Pathak, S., Kupec, J., Murphy, C., Sawtelle, D., Shrivastava, R., Jenne, F.B.
Published in IEEE journal of solid-state circuits (01.10.1985)
Published in IEEE journal of solid-state circuits (01.10.1985)
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Journal Article
Fabrication and characterization of a VMOS EPROM
Draper, D.A., Barnes, J.J., Jenne, F.B.
Published in 1977 International Electron Devices Meeting (1977)
Published in 1977 International Electron Devices Meeting (1977)
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Conference Proceeding
The buried-source VMOS dynamic RAM device
Barnes, J.J., Shabde, S.N., Jenne, F.B.
Published in 1977 International Electron Devices Meeting (1977)
Published in 1977 International Electron Devices Meeting (1977)
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Conference Proceeding
A 19-ns 250-mW CMOS erasable programmable logic device
Pathak, J., Kurkowski, H., Pugh, R., Shrivastava, R., Jenne, F.B.
Published in IEEE journal of solid-state circuits (01.10.1986)
Published in IEEE journal of solid-state circuits (01.10.1986)
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Journal Article
A theoretical and experimental analysis of the buried-source VMOS dynamic RAM cell
Jenne, F.B., Barnes, J.J., Rodgers, T.J.
Published in IEEE transactions on electron devices (01.10.1978)
Published in IEEE transactions on electron devices (01.10.1978)
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Journal Article
VMOS memory technology
Rodgers, T.J., Hiltpold, W.R., Frederick, B., Barnes, J.J., Jenne, F.B., Trotter, J.D.
Published in IEEE journal of solid-state circuits (01.10.1977)
Published in IEEE journal of solid-state circuits (01.10.1977)
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Journal Article