High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Sheppard, S.T., Doverspike, K., Pribble, W.L., Allen, S.T., Palmour, J.W., Kehias, L.T., Jenkins, T.J.
Published in IEEE electron device letters (01.04.1999)
Published in IEEE electron device letters (01.04.1999)
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Journal Article
Transient characteristics of GaN-based heterostructure field-effect transistors
Kohn, E., Daumiller, I., Kunze, M., Neuburger, M., Seyboth, M., Jenkins, T.J., Sewell, J.S., Van Norstand, J., Smorchkova, Y., Mishra, U.K.
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
Published in IEEE transactions on microwave theory and techniques (01.02.2003)
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Journal Article
High Al-content AlGaN/GaN MODFETs for ultrahigh performance
Wu, Y.-F., Keller, B.P., Fini, P., Keller, S., Jenkins, T.J., Kehias, L.T., Denbaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.02.1998)
Published in IEEE electron device letters (01.02.1998)
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Journal Article
Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.
Published in IEEE electron device letters (01.09.2002)
Published in IEEE electron device letters (01.09.2002)
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Journal Article
Ultrahigh-efficiency power amplifier for space radar applications
Quach, T.K., Watson, P.M., Okamura, W., Kaneshiro, E.N., Gutierrez-Aitken, A., Block, T.R., Eldredge, J.W., Jenkins, T.J., Kehias, L.T., Oki, A.K., Sawdai, D., Welch, R.J., Worley, R.D.
Published in IEEE journal of solid-state circuits (01.09.2002)
Published in IEEE journal of solid-state circuits (01.09.2002)
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Journal Article
High performance 0.14 /spl mu/m gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
Progress in Novel Oxides for Gate Dielectrics and Surface Passivation of GaN/AlGaN Heterostructure Field Effect Transistors
Abernathy, C.R, Gila, B.P, Onstine, A.H, Pearton, S.J, Kim, Ji-Hyun, Luo, B, Mehandru, R, Ren, F, Gillespie, J.K, Fitch, R.C, Seweel, J, Dettmer, R, Via, G.D, Crespo, A, Jenkins, T.J, Irokawa, Y
Published in Journal of semiconductor technology and science (2003)
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Published in Journal of semiconductor technology and science (2003)
Journal Article
Artificial neural networks for fast and accurate EM-CAD of microwave circuits
Creech, G.L., Paul, B.J., Lesniak, C.D., Jenkins, T.J., Calcatera, M.C.
Published in IEEE transactions on microwave theory and techniques (01.05.1997)
Published in IEEE transactions on microwave theory and techniques (01.05.1997)
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Journal Article
Short channel AlGaN/GaN MODFET's with 50-GHz fT and 1.7-W/mm output-power at 10 GHz
Wu, Y.-F., Keller, B.P., Keller, S., Nguyen, N.X., Le, M., Nguyen, C., Jenkins, T.J., Kehias, L.T., Denbaars, S.P., Mishra, U.K.
Published in IEEE electron device letters (01.09.1997)
Published in IEEE electron device letters (01.09.1997)
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Journal Article
High performance 0.14 μm gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G.H., Fitch, R.C., Gillespie, J.K., Via, G.D., Moser, N.A., Yannuzzi, M.J., Crespo, A., Sewell, J.S., Dettmer, R.W., Jenkins, T.J., Davis, R.F., Yang, J., Khan, M.A., Binari, S.C.
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
High performance 0.14 [micro]m gate-length AlGaN/GaN power HEMTs on SiC
Jessen, G.H, Fitch, R.C, Gillespie, J.K, Via, G.D, Moser, N.A, Yannuzzi, M.J, Crespo, A, Sewell, J.S, Dettmer, R.W, Jenkins, T.J, Davis, R.F, Yang, J, Khan, M.A, Binari, S.C
Published in IEEE electron device letters (01.11.2003)
Published in IEEE electron device letters (01.11.2003)
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Journal Article
Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors
Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.
Published in Solid-state electronics (01.06.2003)
Published in Solid-state electronics (01.06.2003)
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Journal Article
High marker-density analyses of the α7-nicotinic cholinergic receptor subunit (CHRNA7) gene region on chromosome 15q13-q14 and 5′-rage cloning of fragments specific to CHRNA7 or its partial duplication
Riley, B.P., Makoff, A.M., Mogudi-Carter, M., Jenkins, T.J., Williamson, R., Collier, D.A., Murray, R.M.
Published in Schizophrenia research (2000)
Published in Schizophrenia research (2000)
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Journal Article
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation
Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A.
Published in Solid-state electronics (01.10.2003)
Published in Solid-state electronics (01.10.2003)
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Journal Article
Effects of Sc 2 O 3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs
Gillespie, J.K., Fitch, R.C., Sewell, J., Dettmer, R., Via, G.D., Crespo, A., Jenkins, T.J., Luo, B., Mehandru, R., Kim, J., Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J.
Published in IEEE electron device letters (01.09.2002)
Published in IEEE electron device letters (01.09.2002)
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Journal Article
Proton irradiation of MgO- or Sc 2O 3 passivated AlGaN/GaN high electron mobility transistors
Luo, B., Ren, F., Allums, K.K., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Dwivedi, R., Fogarty, T.N., Wilkins, R., Fitch, R.C., Gillespie, J.K., Jenkins, T.J., Dettmer, R., Sewell, J., Via, G.D., Crespo, A., Baca, A.G., Shul, R.J.
Published in Solid-state electronics (2003)
Published in Solid-state electronics (2003)
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Journal Article
Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc 2O 3 gate dielectric or surface passivation
Luo, B., Mehandru, R., Kim, Jihyun, Ren, F., Gila, B.P., Onstine, A.H., Abernathy, C.R., Pearton, S.J., Gotthold, D., Birkhahn, R., Peres, B., Fitch, R.C., Moser, N., Gillespie, J.K., Jessen, G.H., Jenkins, T.J., Yannuzi, M.J., Via, G.D., Crespo, A.
Published in Solid-state electronics (2003)
Published in Solid-state electronics (2003)
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Journal Article
Replication of suggestive evidence linking the α7-nicotinic cholinergic receptor gene on chromosome 15gi3-q14 to schizophrenia in bantu and malay families
Riley, B.P., Mogudi-Carter, M., Razali, M.S., Sidek, M.R., Isa, M.N., Jenkins, T.J., Williamson, R., Collier, D.A., Murray, R.M.
Published in Schizophrenia research (1998)
Published in Schizophrenia research (1998)
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Journal Article
RBS Study of a Dilute Alloy of Ga(99.8% at.):Bi(0.2% at.)
Peterson, Randolph S., Augustine, Carlyn N., Beriont, Griffin G., Farr, Aidan T., Jenkins, William T.J., Morris, Taylor A., Morrow, Charles F., Giron, Daniel Rosales, Stewart, Joel L., Wahlert, Charles, Manuel, Jack E., Glass, Gary A., Weathers, Duncan L.
Published in Physics procedia (2017)
Published in Physics procedia (2017)
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Journal Article
Ultrahigh efficiency obtained with GaAs-on-insulator MESFET technology
Jenkins, T.J., Kehias, L., Parikh, P., Ibbetson, J., Mishra, U., Docter, D., Le, M., Pusl, J., Widman, D.
Published in IEEE journal of solid-state circuits (01.09.1999)
Published in IEEE journal of solid-state circuits (01.09.1999)
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Journal Article