Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface
Jen, Tean-Sen, Pan, Jen-Wei, Shin, Nerng-Fu, Hong, Jyh-Wong, Chang, Chun-Yen
Published in IEEE transactions on electron devices (01.10.1994)
Published in IEEE transactions on electron devices (01.10.1994)
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