Electrical and optical properties of thick highly doped p-type GaN layers grown by HVPE
Usikov, A., Kovalenkov, O., Soukhoveev, V., Ivantsov, V., Syrkin, A., Dmitriev, V., Nikiforov, A. Yu, Sundaresan, S. G., Jeliazkov, S. J., Davydov, A. V.
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Published in Physica status solidi. C (01.05.2008)
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Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
Sundaresan, S. G., Soe, Aye-Mya, Jeliazkov, S., Singh, R.
Published in IEEE transactions on electron devices (01.10.2012)
Published in IEEE transactions on electron devices (01.10.2012)
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