Low and High Temperature Boron and Phosphorous Doping of Si for Junctions and MEMS Purposes
Gonzatti, Frederic, Hartmann, Jean-Michel, Yckache, Karim
Published in ECS transactions (03.10.2008)
Published in ECS transactions (03.10.2008)
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Journal Article
Growth Studies of Doped SiGeSn/Strained Ge(Sn) Heterostructures
Wirths, Stephan, Ikonic, Zoran, von den Driesch, Nils, Mussler, Gregor, Breuer, Uwe, Tiedemann, Andreas, Bernardy, Patric, Holländer, Bernd, Stoica, Toma, Hartmann, Jean-Michel, Grützmacher, Detlev, Mantl, Siegfried, Buca, Dan
Published in ECS transactions (12.08.2014)
Published in ECS transactions (12.08.2014)
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Journal Article
Low Temperature Cyclic Deposition/Etch (CDE) of Tensile-Strained Si:P
Hartmann, Jean-Michel, Kanyandekwe, Joël, Richy, Jérôme, Veillerot, Marc
Published in Meeting abstracts (Electrochemical Society) (09.10.2022)
Published in Meeting abstracts (Electrochemical Society) (09.10.2022)
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Journal Article
High Mobility Materials on Insulator for Advanced Technology Nodes
Schwarzenbach, Walter, Figuet, Christophe, Delprat, Daniel, Veytizou, Christelle, Huyet, Isabelle, Tempesta, Catherine, Ecarnot, Ludovic, Widiez, Julie, Loup, Virginie, Hartmann, Jean-Michel, Besson, Pascal, Deguet, Chrystel, Mazen, Frédéric, Nguyen, Bich-Yen, Maleville, Christophe
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Journal Article
Boron and Phosphorous Doping of GeSn for Photodetectors and Light Emitting Diodes
Frauenrath, Marvin, Hartmann, Jean-Michel, Nolot, Emmanuel
Published in Meeting abstracts (Electrochemical Society) (23.11.2020)
Published in Meeting abstracts (Electrochemical Society) (23.11.2020)
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Journal Article
Epitaxy of Pseudomorphic GeSn Layers with Germane (GeH 4 ) or Digermane (Ge 2 H 6 ) as Ge Precursors and Tin Tetrachloride (SnCl 4 ) as the Sn Precursor
Hartmann, Jean-Michel, Frauenrath, Marvin, Richy, Jérôme
Published in Meeting abstracts (Electrochemical Society) (23.11.2020)
Published in Meeting abstracts (Electrochemical Society) (23.11.2020)
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Journal Article
A New Method to Induce Tensile Stress in Silicon on Insulator Substrate: From Material Analysis to Device Demonstration
Maitrejean, Sylvain, Loubet, Nicolas, Augendre, Emmanuel, Morin, Pierre Francois, Reboh, Shay, Bernier, Nicolas, Wacquez, Romain, Lherron, Benoit, Bonnevialle, Aurore, Liu, Qing, Hartmann, Jean-Michel, He, Hong, Halimaoui, Aomar, Li, Juntao, Pilorget, Sonia, Kanyandekwe, Joel, Grenouillet, Laurent, Chafik, Fadoua, Morand, Yves, Le Royer, Cyrille, Faynot, Oliver, Celik, Muhsin, Doris, Bruce, de Salvo, Barbara
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Journal Article
(Invited) Wafer Bonding: An Integration Route for Hybrid III-V/SiGe CMOS on 300mm
Czornomaz, Lukas, Daix, Nicolas, Uccelli, Emanuele, Djara, Vladimir, Caimi, Daniele, Rossel, Christophe, Sousa, Marilyne, Siegwart, Heinz, Marchiori, Chiara, Hartmann, Jean-Michel, Fompeyrine, Jean
Published in ECS transactions (14.08.2014)
Published in ECS transactions (14.08.2014)
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Journal Article
Soft Surface Activated Bonding of Hydrophobic Silicon Substrates
Lomonaco, Quentin, Abadie, Karine, Hartmann, Jean-Michel, Morales, Christophe, Noël, Paul, Marion, Tanguy, Lecouvey, Christophe, Papon, Anne-Marie, Fournel, Frank
Published in Meeting abstracts (Electrochemical Society) (22.12.2023)
Published in Meeting abstracts (Electrochemical Society) (22.12.2023)
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Journal Article
Gatemon qubit on a germanium quantum-well heterostructure
Kiyooka, Elyjah, Tangchingchai, Chotivut, Noirot, Leo, Leblanc, Axel, Brun, Boris, Zihlmann, Simon, Maurand, Romain, Schmitt, Vivien, Dumur, Étienne, Hartmann, Jean-Michel, Lefloch, Francois, De Franceschi, Silvano
Year of Publication 04.11.2024
Year of Publication 04.11.2024
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Journal Article
Source and Drain Contact Module for FDSOI MOSFETs : Silicidation and Strain Engineering
Carron, Veronique, Nemouchi, Fabrice, Hartmann, Jean-Michel, Cooper, David, Damlencourt, Jean-Francois, Bernasconi, Sophie, Favier, Sylvie, Morand, Yves
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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Journal Article