Advanced SiGe:B Raised Sources and Drains for p-type FD-SOI MOSFETs
Hartmann, Jean-Michel, Aussenac, Francois, Glorieux, Olivier, Cooper, David, Kerdilès, Sebastien, Chalupa, Zdenek, Boulard, Francois, Niebojewski, Heimanu, Duriez, Blandine, Bordignon, Thomas, Peru, Sebastien, Michałowski, Pawel, Daubriac, Richard, Cristiano, Fuccio
Published in ECS transactions (27.09.2024)
Published in ECS transactions (27.09.2024)
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Journal Article
Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI
Lespiaux, Justine, Kanyandekwe, Joël, Marion, Tanguy, Saidi, Lazhar, Lapras, Valérie, Bond, Alice, Bringuier, Fabien, Richy, Jérôme, Thouvard, Alan, Biet, Tim, Nolot, Emmanuel, Couture, Ludovic, Brunet, Laurent, Rodriguez, Philippe, Dos Reis, Eva, Gauthier, Nicolas, Blot-Saby, Adrien, Hartmann, Jean-Michel
Published in ECS transactions (27.09.2024)
Published in ECS transactions (27.09.2024)
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Journal Article
Epitaxy of Group-IV Semiconductors for Quantum Electronics
Hartmann, Jean-Michel, Bernier, Nicolas, Pierre, Francois, Barnes, Jean-Paul, Mazzocchi, Vincent, Krawczyk, Julia, Lima, Gabriel, Kiyooka, Elyjah, De Franceschi, Silvano
Published in ECS transactions (19.05.2023)
Published in ECS transactions (19.05.2023)
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Journal Article
Ge Nano-Heteroepitaxy: From Nano-Pillars to Thick Coalesced Layers
Mastari, Marouane, Charles, Matthew, Pimenta-Barros, Patricia, Argoud, Maxime, Tiron, Raluca, Papon, Anne-Marie, Chevalier, Nicolas, Hartmann, Jean-Michel, Landru, Didier, Kim, Young-Pil, Kononchuk, Oleg
Published in ECS transactions (30.09.2022)
Published in ECS transactions (30.09.2022)
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Journal Article
Sb 2 S 3 as a low-loss phase-change material for mid-IR photonics
Biegański, Adam, Perestjuk, Marko, Armand, Rémi, Della Torre, Alberto, Laprais, Capucine, Saint-Girons, Guillaume, Reboud, Vincent, Hartmann, Jean-Michel, Tortai, Jean-Hervé, Moreau, Antonin, Lumeau, Julien, Nguyen, Thach, Mitchell, Arnan, Monat, Christelle, Cueff, Sébastien, Grillet, Christian
Published in Optical materials express (01.04.2024)
Published in Optical materials express (01.04.2024)
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Journal Article
Impact of Co on the Ni 0.9 Co 0.1 -Ge 0.9 Sn 0.1 Solid-State Reaction and Properties
Quintero, Andrea, Gergaud, Patrice, Hartmann, Jean-Michel, Reboud, Vincent, Cassan, Eric, Rodriguez, Philippe
Published in ECS transactions (01.11.2019)
Published in ECS transactions (01.11.2019)
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Journal Article
Selective Epitaxy of Tensile, Highly Doped SiP for Planar NMOS FD-SOI Devices
Kanyandekwe, Joel, Hartmann, Jean-Michel, Lespiaux, Justine, Marion, Tanguy, Saidi, Lazhar, Lapras, Valérie, Bond, Alice, Bringuier, Fabien, Richy, Jérôme, Gauthier, Nicolas, Thouvard, Alan, Biet, Tim, Couture, Ludovic, Blot-Saby, Adrien, Andre, Agathe, Marchand, Jérémy, Licitra, Christophe, Coquand, Remi, Royer, Alexis, Dewolf, Tristan, Al Dujaili, Haidar, Lassenberger, Andrea, Glorieux, Olivier
Published in ECS transactions (27.09.2024)
Published in ECS transactions (27.09.2024)
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Journal Article
Ultra-High Boron Doping of Si and Ge for Nanoelectronics and Photonics
Hartmann, Jean-Michel, Frauenrath, Marvin, Richy, Jérôme, Veillerot, Marc
Published in ECS transactions (08.09.2020)
Published in ECS transactions (08.09.2020)
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Journal Article
High Coherence at f and 2 f of Mid-Infrared Supercontinuum Generation in Silicon Germanium Waveguides
Sinobad, Milan, Fedeli, Jean-Marc, Monat, Christelle, Grillet, Christian, Torre, Alberto Della, Armand, Remi, Luther-Davies, Barry, Ma, Pan, Madden, Stephen, Mitchell, Arnan, Moss, David J., Hartmann, Jean-Michel
Published in IEEE journal of selected topics in quantum electronics (01.03.2020)
Published in IEEE journal of selected topics in quantum electronics (01.03.2020)
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Journal Article
Mid-IR linear optical properties of hybrid Sb 2 S 3 /SiGe waveguides
Bieganski, Adam, Perestjuk, Marko, Armand, Remi, Della Torre, Alberto, Reboud, Vincent, Hartmann, Jean-Michel, Tortai, Jean-Herve, Nguyen, Thach, Mitchell, Arnan, Monat, Christelle, Cueff, Sebastien, Grillet, Christian
Published in EPJ Web of conferences (2023)
Published in EPJ Web of conferences (2023)
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Journal Article
Design, fabrication and characterization of an AWG at 4.5 µm
Barritault, Pierre, Brun, Mickael, Labeye, Pierre, Hartmann, Jean-Michel, Boulila, Fahem, Carras, Mathieu, Nicoletti, Sergio
Published in Optics express (05.10.2015)
Published in Optics express (05.10.2015)
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Journal Article
Advances in In-situ Boron and Phosphorous Doping of SiGeSn
Frauenrath, Marvin, Casiez, Lara, Concepción Díaz, Omar, Coudurier, Nicolas, Gauthier, Nicolas, N'hari, Sidi-Mohammed, Nolot, Emmanuel, Rodriguez, Philippe, Buca, Dan, Pauc, Nicolas, Reboud, Vincent, Hartmann, Jean-Michel
Published in ECS transactions (30.09.2022)
Published in ECS transactions (30.09.2022)
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Journal Article
A Benchmark of 300mm RP-CVD Chambers for the Low Temperature Epitaxy of Si and SiGe
Hartmann, Jean-Michel, Mazzocchi, Vincent, Pierre, Francois, Barnes, Jean-Paul
Published in ECS transactions (20.07.2018)
Published in ECS transactions (20.07.2018)
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Journal Article
From nonreciprocal to charge-4e supercurrents in Ge-based Josephson devices with tunable harmonic content
Leblanc, Axel, Tangchingchai, Chotivut, Momtaz, Zahra Sadre, Kiyooka, Elyjah, Hartmann, Jean-Michel, Fernandez-Bada, Gonzalo Troncoso, Brun-Barriere, Boris, Schmitt, Vivien, Zihlmann, Simon, Maurand, Romain, Dumur, Étienne, de Franceschi, Silvano, Lefloch, François
Published in Physical review research (2024)
Published in Physical review research (2024)
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Journal Article
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs
Junk, Yannik, Frauenrath, Marvin, Han, Yi, Diaz, Omar Concepcion, Bae, Jin-Hee, Hartmann, Jean-Michel, Grutzmacher, Detlev, Buca, Dan, Zhao, Qing-Tai
Published in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (19.09.2022)
Published in ESSDERC 2022 - IEEE 52nd European Solid-State Device Research Conference (ESSDERC) (19.09.2022)
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