Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
Jazaeri, F., Barbut, L., Koukab, A., Sallese, J.-M.
Published in Solid-state electronics (01.04.2013)
Published in Solid-state electronics (01.04.2013)
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Journal Article
Total ionizing dose effects on analog performance of 28 nm bulk MOSFETs
Zhang, C-M, Jazaeri, F., Pezzotta, A., Bruschini, C., Borghello, G., Mattiazzo, S., Baschirotto, A., Enz, C.
Published in 2017 47th European Solid-State Device Research Conference (ESSDERC) (01.09.2017)
Published in 2017 47th European Solid-State Device Research Conference (ESSDERC) (01.09.2017)
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Conference Proceeding
Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC
Pezzotta, A., Zhang, C.-M, Jazaeri, F., Bruschini, C., Borghello, G., Faccio, F., Mattiazzo, S., Baschirotto, A., Enz, C.
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01.09.2016)
Published in 2016 46th European Solid-State Device Research Conference (ESSDERC) (01.09.2016)
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Conference Proceeding
Mobility Degradation of 28-nm Bulk MOSFETs Irradiated to Ultrahigh Total Ionizing Doses
Zhang, C.-M., Jazaeri, F., Borghello, G., Mattiazzo, S., Baschirotto, A., Enz, C.
Published in 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) (01.11.2018)
Published in 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) (01.11.2018)
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Conference Proceeding
Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel
Jazaeri, F., Barbut, L., Sallese, J-M
Published in IEEE transactions on electron devices (01.07.2013)
Published in IEEE transactions on electron devices (01.07.2013)
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Journal Article
GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
Zhang, C.-M, Jazaeri, F., Pezzotta, A., Bruschini, C., Borghello, G., Faccio, F., Mattiazzo, S., Baschirotto, A., Enz, C.
Published in 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD) (01.10.2016)
Published in 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD) (01.10.2016)
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Conference Proceeding
Transient Off-Current in Junctionless FETs
Barbut, L., Jazaeri, F., Bouvet, D., Sallese, J-M
Published in IEEE transactions on electron devices (01.06.2013)
Published in IEEE transactions on electron devices (01.06.2013)
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Journal Article
Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
Saeidi, A., Jazaeri, F., Stolichnov, I., Luong, G. V., Zhao, Q. T., Manti, S., Ionescu, Adrian M.
Published in 2017 Silicon Nanoelectronics Workshop (SNW) (01.06.2017)
Published in 2017 Silicon Nanoelectronics Workshop (SNW) (01.06.2017)
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Conference Proceeding
Nanoscale field effect diode as a high frequency and ultra lowpower variable gain amplifier in AGC circuits
Jazaeri, F., Sammak, A., Forouzandeh, B., Raissi, F., Jalili, A.
Published in 2008 International Conference on Microelectronics (01.12.2008)
Published in 2008 International Conference on Microelectronics (01.12.2008)
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Conference Proceeding
Pseudo-linear Automatic Gain Control system based on Nanoscale Field Effect Diode and SOI-MOSFET
Jazaeri, F., Soleimani-Amiri, S., Ebrahimi, B., Forouzandeh, B., Ahmadi, H.-R., Raissi, F.
Published in 2008 3rd International Design and Test Workshop (01.12.2008)
Published in 2008 3rd International Design and Test Workshop (01.12.2008)
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Conference Proceeding