Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs
Bernát, J., Javorka, P., Fox, A., Marso, M., Lüth, H., Kordoš, P.
Published in Solid-state electronics (01.11.2003)
Published in Solid-state electronics (01.11.2003)
Get full text
Journal Article
AlGaN/GaN varactor diode for integration in HEMT circuits
Marso, M., Wolter, M., Javorka, P., Fox, A., Kordoš, P.
Published in Electronics letters (22.11.2001)
Published in Electronics letters (22.11.2001)
Get full text
Journal Article
Influence of SiO2 and Si3N4 passivation on AlGaN∕GaN∕Si HEMT performance
Javorka, P., Bernát, J., Fox, A., Marso, M., Lüth, H., Kordoš, P.
Published in Electronics letters (24.07.2003)
Published in Electronics letters (24.07.2003)
Get full text
Journal Article
Annealing of Schottky contacts deposited on dry etched AlGaN/GaN
Kuzmík, J, Javorka, P, Marso, M, Kordos, P
Published in Semiconductor science and technology (01.11.2002)
Published in Semiconductor science and technology (01.11.2002)
Get full text
Journal Article
Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes
Kuzmı́k, J., Pogany, D., Gornik, E., Javorka, P., Kordoš, P.
Published in Solid-state electronics (01.02.2004)
Published in Solid-state electronics (01.02.2004)
Get full text
Journal Article
Uniform III-nitride growth in single wafer horizontal MOVPE reactors
Hardtdegen, H., Kaluza, N., Steins, R., Javorka, P., Wirtz, K., Alam, A., Schmitt, T., Beccard, R.
Published in Physica status solidi. A, Applications and materials science (01.04.2005)
Published in Physica status solidi. A, Applications and materials science (01.04.2005)
Get full text
Journal Article
AlGaN/GaN HEMTs on (111) silicon substrates
Javorka, P., Alam, A., Wolter, M., Fox, A., Marso, M., Heuken, M., Luth, H., Kordos, P.
Published in IEEE electron device letters (01.01.2002)
Published in IEEE electron device letters (01.01.2002)
Get full text
Journal Article
Performance of unpassivated AlGaN/GaN/SiC HEMTs after short-term electrical bias stress
Bernát, J., Wolter, M., Javorka, P., Fox, A., Marso, M., Kordos̆, P.
Published in Solid-state electronics (01.10.2004)
Published in Solid-state electronics (01.10.2004)
Get full text
Journal Article
Influence of layer structure on performance of AlGaN/GaN high electron mobility transistors before and after passivation
BERNAT, J, JAVORKA, P, FOX, A, MARSO, M, KORDOS, P
Published in Journal of electronic materials (01.05.2004)
Published in Journal of electronic materials (01.05.2004)
Get full text
Conference Proceeding
Journal Article
AlGaN/GaN Round-HEMTs on (111) silicon substrates
Javorka, P., Alam, A., Nastase, N., Marso, M., Hardtdegen, H., Heuken, M., Lüth, H., Kordoš, P.
Published in Electronics letters (25.10.2001)
Published in Electronics letters (25.10.2001)
Get full text
Journal Article
Influence of doping concentration on DC and RF performance of AlGaN /GaN HEMTs on silicon substrate
Marso, M, Javorka, P, Dikme, Y, Kalisch, H, Bernat, J, Schafer, C, Schineller, B, Hart, Avd, Wolter, M, Fox, A
Published in Physica status solidi. C (01.11.2003)
Published in Physica status solidi. C (01.11.2003)
Get full text
Journal Article
Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors
WOLTER, M, JAVORKA, P, FOX, A, MARSO, M, LÜTH, H, KORDOS, P, CARIUS, R, ALAM, A, HEUKEN, M
Published in Journal of electronic materials (01.12.2002)
Published in Journal of electronic materials (01.12.2002)
Get full text
Journal Article
Influence of carrier supply doping on the RF properties of AlGaN/GaN/SiC high-electron-mobility transistors
Marso, M., Bernát, J., Javorka, P., Fox, A., Kordoš, P.
Published in Physica status solidi. C (01.05.2005)
Published in Physica status solidi. C (01.05.2005)
Get full text
Journal Article
Extending HKMG scaling on CMOS with FDSOI: Advantages and integration challenges
Triyoso, D. H., Carter, R., Kluth, J., Hempel, K., Gribelyuk, M., Kang, L., Kumar, A., Mulfinger, B., Javorka, P., Punchihewa, K., Child, A., McArdle, T., Holt, J., Straub, S., Sporer, R., Chen, P.
Published in 2016 International Conference on IC Design and Technology (ICICDT) (01.06.2016)
Published in 2016 International Conference on IC Design and Technology (ICICDT) (01.06.2016)
Get full text
Conference Proceeding
Investigation of traps in AlGaN/GaN HEMTs on silicon substrate
Wolter, M., Marso, M., Javorka, P., Bernát, J., Carius, R., Lüth, H., Kordoš, P.
Published in Physica status solidi. C (01.12.2003)
Published in Physica status solidi. C (01.12.2003)
Get full text
Journal Article
Si(111) as alternative substrate for AlGaN/GaN HEMT
Dikme, Y., Fieger, M., Jessen, F., Szymakowski, A., Kalisch, H., Woitok, J. F., van Gemmern, P., Javorka, P., Marso, M., Kaluza, N., Jansen, R. H., Heuken, M.
Published in Physica status solidi. C (01.12.2003)
Published in Physica status solidi. C (01.12.2003)
Get full text
Journal Article
Backgating, high-current and breakdown characterisation of AlGaN/GaN HEMTs on silicon substrates
Kuzmik, J., Blaho, M., Pogany, D., Gornik, E., Alam, A., Dikme, Y., Heuken, M., Javorka, P., Marso, M., Kordos, P.
Published in ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003 (2003)
Published in ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003 (2003)
Get full text
Conference Proceeding
Versatile technology modeling for 22FDX platform development
Bazizi, E. M., Zaka, A., Herrmann, T., Cortes, I., Jiang, L., Goh, M. H. J., Deb Roy, S., Nowak, E., Kluth, G., Javorka, P., Pirro, L., Mazurier, J., Harame, D., Kammler, T., Hoentschel, J., Schaeffer, J., Benistant, F., Rice, B.
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
Get full text
Conference Proceeding
Material and device issues of AlGaN/GaN HEMTs on silicon substrates
Javorka, P., Alam, A., Marso, M., Wolter, M., Kuzmik, J., Fox, A., Heuken, M., Kordoš, P.
Published in Microelectronics (01.05.2003)
Published in Microelectronics (01.05.2003)
Get full text
Journal Article