A transparent solar cell based on a mechanically exfoliated GaTe and InGaZnO p-n heterojunctionElectronic supplementary information (ESI) available: Fig. S1: electrical and optical properties of the 150 nm-thick rf sputtered ITO film. Fig. S2: semi-logarithmic I-V plot of the GaTe/IGZO p-n heterojunction in dark state with leakage current level. Fig. S3: spectral intensity of the halogen light source, which was used for the photovoltaic performance measurement. Fig. S4: photovoltaic performance
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