Influence of Hydrogen Incorporation on the Reliability of Gate Oxide Formed by Using Low-Temperature Plasma Selective Oxidation Applicable to Sub-50-nm W-Polymetal Gate Devices
LIM, Kwan-Yong, SUNG, Min-Gyu, KU, Ja-Chun, KIM, Jin-Woong, CHO, Heung-Jae, YONG SOO KIM, JANG, Se-Aug, SEUNG RYONG LEE, KIM, Kwangok, YANG, Hong-Seon, SOHN, Hyun-Chul, PYI, Seung-Ho
Published in IEEE electron device letters (01.04.2008)
Published in IEEE electron device letters (01.04.2008)
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Journal Article
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Cho, Heung-Jae, Lim, Kwan-Yong, Jang, Se-Aug, Lee, Jung-Ho, Oh, Jae-Geun, Kim, Yong Soo, Yang, Hong-Seon, Sohn, Hyun-Chul
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Junction leakage characteristics in modified LOCOS isolation structures with a nitride spacer
Jang, Se-Aug, Yeo, In-Seok, Kim, Young-Bog
Published in IEEE transactions on electron devices (01.01.1999)
Published in IEEE transactions on electron devices (01.01.1999)
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Journal Article
Reliability of Recess-channel Gate Cell Transistor under Gate-Induced Drain Leakage Stress and Positive Bias Fowler-Nordheim Gate Stress
Heung-Jae Cho, Yong Soo Kim, Se-Aug Jang, Tae-Yoon Kim, Kwan-Yong Lim, Min Gyu Sung, Moon Sig Joo, Seun Rryong Lee, Hong-Seon Yang, Jin-Woong Kim
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
Published in 2006 European Solid-State Device Research Conference (01.09.2006)
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Conference Proceeding
Gate-first high-k/metal gate DRAM technology for low power and high performance products
Sung, Minchul, Jang, Se-Aug, Lee, Hyunjin, Ji, Yun-Hyuck, Kang, Jae-Il, Jung, Tae-O, Ahn, Tae-Hang, Son, Yun-Ik, Kim, Hyung-Chul, Lee, Sun-Woo, Lee, Seung-Mi, Lee, Jung-Hak, Baek, Seung-Beom, Doh, Eun-Hyup, Cho, Heung-Jae, Jang, Tae-Young, Jang, Il-Sik, Han, Jae-Hwan, Ko, Kyung-Bo, Lee, Yu-Jun, Shin, Su-Bum, Yu, Jae-Seon, Cho, Sung-Hyuk, Han, Ji-Hye, Kang, Dong-Kyun, Kim, Jinsung, Lee, Jae-Sang, Ban, Keun-Do, Yeom, Seung-Jin, Nam, Hyun-Wook, Lee, Dong-Kyu, Jeong, Mun-Mo, Kwak, Byungil, Park, Jeongsoo, Choi, Kisik, Park, Sung-Kye, Kwak, Noh-Jung, Hong, Sung-Joo
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Impact of Thin WSIX Insertion in Tungsten Polymetal Gate on Gate Oxide Reliability and Gate Contact Resistance
Min Gyu Sung, Kwan-Yong Lim, Heung-Jae Cho, Seung Ryong Lee, Se-Aug Jang, Hong-Seon Yang, Kwangok Kim, Noh-Jung Kwak, Hyun-Chul Sohn, Jin Woong Kim
Published in 2006 IEEE International Reliability Physics Symposium Proceedings (01.03.2006)
Published in 2006 IEEE International Reliability Physics Symposium Proceedings (01.03.2006)
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Conference Proceeding
Study of Plasma Damage at Recess-Channel Gate (RG) Structure During Plasma Nitridation
Heung-Jae Cho, Tae-Yoon Kim, Se-Aug Jang, Hyun Ahn, Yong Soo Kim, Kwan-Yong Lim, Min Gyu Sung, Hong-Seon Yang, Seung-Ho Pyi, Jin Woong Kim
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
Published in 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual (01.04.2007)
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Conference Proceeding
Control of the slope of field oxide edge and its effects on gate oxide reliability
JANG, S.-A, KIM, Y.-B, YEO, I.-S, LEG, S.-K
Published in Journal of the Electrochemical Society (1999)
Published in Journal of the Electrochemical Society (1999)
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Journal Article
Low resistive tungsten dual polymetal gate process for high speed and high density memory devices
Yong Soo Kim, Kwan-Yong Lim, Min-Gyu Sung, Soo-Hyun Kim, Hong-Seon Yang, Heung-Jae Cho, Se-Aug Jang, Jae-Geun Oh, Kwangok Kim, Young-Kyun Jung, Tae-Woo Jung, Choon-Hwan Kim, Doek-Won Lee, Won Kim, Young-Hoon Kim, Kang-Sik Choi, Tae-Kyung Oh, Yun-Taek Hwang, Seung-Ho Pyi, Ja-chun Ku, Jin-Woong Kim
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
Published in ESSDERC 2007 - 37th European Solid State Device Research Conference (01.09.2007)
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Conference Proceeding
Hot-carrier degradation mechanism in narrow- and wide-channel n-MOSFETs with recessed LOCOS isolation structure
Yue, Jeffrey Mun Pun, Chim, Wai Kin, Cho, Byung Jin, Chan, Daniel Sin Hung, Qin, Wei Han, Kim, Young-Bog, Jang, Se-Aug, Yeo, In-Seok
Published in IEEE electron device letters (01.03.2000)
Published in IEEE electron device letters (01.03.2000)
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Journal Article
The role of polysilicon film in the suppression of bird's beak in poly-buffered LOCOS
Jang, Se-Aug, Han, Chung-Soo, Kim, Young-Bog, Yeo, In-Seok
Published in IEEE transactions on electron devices (01.02.1999)
Published in IEEE transactions on electron devices (01.02.1999)
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Journal Article
Impact of gate sidewall spacer structures on DRAM cell transistors under Fowler-Nordheim and gate-induced drain leakage stress conditions
LIM, Kwan-Yong, JANG, Se-Aug, SOHN, Hyun-Chul, YONG SOO KIM, CHO, Heung-Jae, OH, Jae-Geun, CHUNG, Su-Ock, LEE, Sung-Joon, SUN, Woo-Kyung, SUH, Jai-Bum, YANG, Hong-Seon
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
Published in 2004 IEEE International Reliability Physics Symposium. Proceedings (2004)
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Conference Proceeding
Evaluation of double Spacer local oxidation of silicon (LOCOS) isolation process for sub-quarter micron design rule
JANG, S.-A, KIM, Y.-B, CHO, B.-J, KIM, J.-C
Published in Japanese Journal of Applied Physics (01.03.1997)
Published in Japanese Journal of Applied Physics (01.03.1997)
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Conference Proceeding
Journal Article
Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
Sung, Min Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Lee, Seung Ryong, Jang, Se-Aug, Kim, Yong Soo, Joo, Moon Sig, Lee, Ju-Hee, Kim, Tae-Yoon, Yang, Hong-Seon, Pyi, Seung-Ho, Kim, Jin Woong
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron–Nitride for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Memory Devices
Sung, Min Gyu, Lim, Kwan-Yong, Cho, Heung-Jae, Kim, Yong-Soo, Hwang, Yun Taek, Jang, Se Aug, Yang, Hong-Seon, Ku, Ja Chun, Kim, Jin Woong
Published in Japanese Journal of Applied Physics (01.04.2008)
Published in Japanese Journal of Applied Physics (01.04.2008)
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Journal Article
Highly Scalable Saddle-Fin (S-Fin) Transistor for Sub-50nm DRAM Technology
Park, Sung-Wook, Hong, Sung-Joo, Kim, Jin-Woong, Jeong, Jae-Goan, Yoo, Kyung-Dong, Moon, Seung-Chan, Sohn, Hyun-Chul, Kwak, Noh-Jung, Cho, Yun-Seok, Baek, Seung-Joo, Park, Hyung-Soon, Yoon, Hyo Geun, Lee, Bong-Hoon, Kim, Jin-Soo, Hwang, Sun-Hwan, Lee, Lae-Hee, Cho, Heung-Jae, Cho, Sung Yoon, Chung, Chai-O, Kim, Kwang-Ok, Yoo, Min-Soo, Jang, Se-Aug, Lee, Sang-Don, Chung, Sung-Woong
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
Published in 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers (2006)
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Conference Proceeding
Retarded C54 transformation and suppressed agglomeration by precipitates in TiSi2 films
Suh, You-Seok, Park, Dae-Gyu, Jang, Se-Aug, Lee, Sang-Hyeob, Kim, Tae-Kyun, Yeo, In-Seok, Kim, Sam-Dong, Kim, Chung-Tae
Published in Journal of applied physics (15.03.2000)
Published in Journal of applied physics (15.03.2000)
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Journal Article
Effects of nitridation pressure on the characteristics of gate dielectrics annealed in N2O ambient
Moon-Sig Joo, In-Seok Yeo, Chan-Ho Lee, Heung-Jae Cho, Se-Aug Jang, Sahng-Kyoo Lee
Published in IEEE electron device letters (01.09.1999)
Published in IEEE electron device letters (01.09.1999)
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Journal Article