High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory
Iwata-Harms, Jodi M., Jan, Guenole, Liu, Huanlong, Serrano-Guisan, Santiago, Zhu, Jian, Thomas, Luc, Tong, Ru-Ying, Sundar, Vignesh, Wang, Po-Kang
Published in Scientific reports (26.09.2018)
Published in Scientific reports (26.09.2018)
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Journal Article
Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory
Iwata-Harms, Jodi M., Jan, Guenole, Serrano-Guisan, Santiago, Thomas, Luc, Liu, Huanlong, Zhu, Jian, Lee, Yuan-Jen, Le, Son, Tong, Ru-Ying, Patel, Sahil, Sundar, Vignesh, Shen, Dongna, Yang, Yi, He, Renren, Haq, Jesmin, Teng, Zhongjian, Lam, Vinh, Liu, Paul, Wang, Yu-Jen, Zhong, Tom, Fukuzawa, Hideaki, Wang, Po-Kang
Published in Scientific reports (19.12.2019)
Published in Scientific reports (19.12.2019)
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Journal Article
High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer
Jan, Guenole, Wang, Yu-Jen, Moriyama, Takahiro, Lee, Yuan-Jen, Lin, Mark, Zhong, Tom, Tong, Ru-Ying, Torng, Terry, Wang, Po-Kang
Published in Applied physics express (01.09.2012)
Published in Applied physics express (01.09.2012)
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Journal Article
A Study of Write Margin of Spin Torque Transfer Magnetic Random Access Memory Technology
Min, Tai, Tang, Denny, Wang, Pokang, Chen, Mao-min, Sun, J. Z., Debrosse, J. K., Worledge, D. C., Maffitt, T. M., Gallagher, W. J., Chen, Qiang, Beach, Robert, Jan, Guenole, Horng, Cheng, Kula, Witold, Torng, Terry, Tong, Ruth, Zhong, Tom
Published in IEEE transactions on magnetics (01.06.2010)
Published in IEEE transactions on magnetics (01.06.2010)
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Journal Article
Conference Proceeding
Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms
Jan, Guenole, Thomas, Luc, Son Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, Iwata-Harms, Jodi, Patel, Sahil, Ru-Ying Tong, Serrano-Guisan, Santiago, Dongna Shen, Renren He, Haq, Jesmin, Teng, Jeffrey, Lam, Vinh, Annapragada, Rao, Yu-Jen Wang, Zhong, Tom, Torng, Terry, Po-Kang Wang
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories
Guenole Jan, Thomas, Luc, Son Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, Ru-Ying Tong, Keyu Pi, Yu-Jen Wang, Dongna Shen, Renren He, Haq, Jesmin, Teng, Jeffrey, Lam, Vinh, Kenlin Huang, Zhong, Tom, Torng, Terry, Po-Kang Wang
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
Published in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers (01.06.2014)
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Conference Proceeding
A fully-functional 90nm 8Mb STT MRAM demonstrator featuring trimmed, reference cell-based sensing
DeBrosse, John, Maffitt, Thomas, Nakamura, Yutaka, Jan, Guenole, Po-Kang Wang
Published in 2015 IEEE Custom Integrated Circuits Conference (CICC) (01.09.2015)
Published in 2015 IEEE Custom Integrated Circuits Conference (CICC) (01.09.2015)
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Conference Proceeding
Reliability study of perpendicular STT-MRAM as emerging embedded memory qualified for reflow soldering at 260°C
Meng-Chun Shih, Chia-Yu Wang, Yung-Huei Lee, Wang, Wayne, Thomas, Luc, Huanlong Liu, Jian Zhu, Yuan-Jen Lee, Jan, Guenole, Yu-Jen Wang, Zhong, Tom, Torng, Terry, Po-Kang Wang, Lin, Derek, Tien-Wei Chiang, Kuei-Hung Shen, Chuang, Harry, Gallagher, William J.
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
Published in 2016 IEEE Symposium on VLSI Technology (01.06.2016)
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Conference Proceeding
Demonstration of an MgO based anti-fuse OTP design integrated with a fully functional STT-MRAM at the Mbit level
Guenole Jan, Thomas, Luc, Son Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, Ru-Ying Tong, Keyu Pi, Yu-Jen Wang, Shen, Dongna, Renren He, Haq, Jesmin, Teng, Jeffrey, Vinh Lam, Annapragada, Rao, Zhong, Tom, Torng, Terry, Po-Kang Wang
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
Published in 2015 Symposium on VLSI Technology (VLSI Technology) (01.06.2015)
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Conference Proceeding
Journal Article
Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR
Thomas, Luc, Jan, Guenole, Son Le, Serrano-Guisan, Santiago, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, Iwata-Harms, Jodi, Ru-Ying Tong, Patel, Sahil, Sundar, Vignesh, Dongna Shen, Yi Yang, Renren He, Haq, Jesmin, Zhongjian Teng, Vinh Lam, Liu, Paul, Yu-Jen Wang, Zhong, Tom, Po-Kang Wang
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
Impact of external magnetic field on embedded perpendicular STT-MRAM technology qualified for solder reflow
Chia-Yu Wang, Meng-Chun Shih, Yung-Huei Lee, Wang, Wayne, Thomas, Luc, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, Guenole Jan, Wang, Allen, Zhong, Tom, Po-Kang Wang, Lin, Derek, Chia-Hsiang Chen, Chih-Yang Chang, Chih-Hui Weng, Tien-Wei Chiang, Kuei-Hung Shen, Gallagher, William J., Chuang, Harry
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM
Thomas, Luc, Jan, Guenole, Son Le, Yuan-Jen Lee, Huanlong Liu, Jian Zhu, Serrano-Guisan, Santiago, Ru-Ying Tong, Keyu Pi, Dongna Shen, Renren He, Haq, Jesmin, Zhongjian Teng, Annapragada, Rao, Vinh Lam, Yu-Jen Wang, Zhong, Tom, Torng, Terry, Po-Kang Wang
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
Published in 2015 IEEE International Electron Devices Meeting (IEDM) (01.12.2015)
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Conference Proceeding
Journal Article
Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications
Jan, Guenole, Thomas, Luc, Le, Son, Lee, Yuan-Jen, Liu, Huanlong, Zhu, Jian, Iwata-Harms, Jodi, Patel, Sahil, Tong, Ru-Ying, Sundar, Vignesh, Serrano-Guisan, Santiago, Shen, Dongna, He, Renren, Haq, Jesmin, Teng, Zhongjian Jeffrey, Lam, Vinh, Yang, Yi, Wang, Yu-Jen, Zhong, Tom, Fukuzawa, Hideaki, Wang, Po-Kang
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
Published in 2018 IEEE Symposium on VLSI Technology (01.06.2018)
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Conference Proceeding
스핀 토크 전달(STT)-자기 저항 랜덤 액세스 메모리(MRAM)를 위한 질화물 캐핑층
JAN GUENOLE, TONG RU YING, SUNDAR VIGNESH, LIU HUANLONG, IWATA JODI MARI, ZHU JIAN
Year of Publication 16.07.2020
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Year of Publication 16.07.2020
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