Substrate temperature influenced ZrO 2 films for MOS devices
Kondaiah, Paruchuri, Jagadeesh Chandra, S.V., Fortunato, Elvira, Chel Jong, Choi, Mohan Rao, G., Koti Reddy, D.V. Rama, Uthanna, S.
Published in Surface and interface analysis (01.09.2020)
Published in Surface and interface analysis (01.09.2020)
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Journal Article
Effects of post deposition annealing atmosphere on interfacial and electrical properties of HfO2/Ge3N4 gate stacks
Mallem, Kumar, Jagadeesh Chandra, S.V., Ju, Minkyu, Dutta, Subhajit, Phanchanan, Swagata, Sanyal, Simpy, Pham, Duy Phong, Hussain, Shahzada Qamar, Kim, Youngkuk, Park, Jinjoo, Cho, Young-Hyun, Cho, Eun-Chel, Yi, Junsin
Published in Thin solid films (01.04.2019)
Published in Thin solid films (01.04.2019)
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Journal Article
Oxygen partial pressure influenced stoichiometry, structural, electrical, and optical properties of DC reactive sputtered hafnium oxide films
Venkataiah, Sunke, Chandra, S.V. Jagadeesh, Chalapathi, Uppala, Ramana, Ch.V.V., Uthanna, Suda
Published in Surface and interface analysis (01.02.2021)
Published in Surface and interface analysis (01.02.2021)
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Journal Article
Substrate temperature influenced ZrO2 films for MOS devices
Kondaiah, Paruchuri, Jagadeesh Chandra, S.V., Fortunato, Elvira, Chel Jong, Choi, Mohan Rao, G., Koti Reddy, D.V. Rama, Uthanna, S.
Published in Surface and interface analysis (01.09.2020)
Published in Surface and interface analysis (01.09.2020)
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Journal Article
Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO2 gate stack
JAGADEESH CHANDRA, S. V, KIM, Jin-Sung, MOON, Kyung-Won, CHOI, Chel-Jong
Published in Microelectronic engineering (2012)
Published in Microelectronic engineering (2012)
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Conference Proceeding
Journal Article
Effect of post metallization annealing on structural and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitors with Pt/HfO 2 gate stack
Jagadeesh Chandra, S.V., Kim, Jin-Sung, Moon, Kyung-Won, Choi, Chel-Jong
Published in Microelectronic engineering (2012)
Published in Microelectronic engineering (2012)
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Journal Article
Structural and electrical properties of radio frequency magnetron sputtered tantalum oxide films: Influence of post-deposition annealing
Jagadeesh Chandra, S.V., Choi, Chel-Jong, Uthanna, S., Mohan Rao, G.
Published in Materials science in semiconductor processing (01.12.2010)
Published in Materials science in semiconductor processing (01.12.2010)
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Journal Article
Effects of Post Deposition Annealing Ambient on Interfacial and Electrical Properties of HfO 2 /Ge 3 N 4 Gate Stacks on Ge Mos Devices
Mallem, Kumar, Dutta, Subhajit, S.V, Jagadeesh Chandra, Yi, Junsin
Published in Meeting abstracts (Electrochemical Society) (13.07.2018)
Published in Meeting abstracts (Electrochemical Society) (13.07.2018)
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Journal Article
Temperature Independent on Plastic Optical Fiber Evanescent Wave Sensor
Kumar, S. Ravi, Sunil Kumar, K., Babu, J., Chandra, S.V. Jagadeesh
Published in 2021 Fourth International Conference on Electrical, Computer and Communication Technologies (ICECCT) (15.09.2021)
Published in 2021 Fourth International Conference on Electrical, Computer and Communication Technologies (ICECCT) (15.09.2021)
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Conference Proceeding
Thermal stability of high- k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO 2 films
Chang, Sung-Yong, Jeong, Myeong-Il, Jagadeesh Chandra, S.V., Lee, Yong-Boo, Hong, Hyo-Bong, Rajagopal Reddy, V., Choi, Chel-Jong
Published in Materials science in semiconductor processing (2008)
Published in Materials science in semiconductor processing (2008)
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Journal Article
Thermal stability of high-k Er-silicate gate dielectric formed by interfacial reaction between Er and SiO2 films
Chang, Sung-Yong, Jeong, Myeong-Il, Jagadeesh Chandra, S.V., Lee, Yong-Boo, Hong, Hyo-Bong, Rajagopal Reddy, V., Choi, Chel-Jong
Published in Materials science in semiconductor processing (01.08.2008)
Published in Materials science in semiconductor processing (01.08.2008)
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Journal Article