Extraction of Packaged GaN Power Transistors Parasitics Using S-Parameters
Pace, L., Defrance, N., Videt, A., Idir, N., De Jaeger, J.-C., Avramovic, V.
Published in IEEE transactions on electron devices (01.06.2019)
Published in IEEE transactions on electron devices (01.06.2019)
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Journal Article
Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz
Soltani, A., Gerbedoen, J.-C, Cordier, Y., Ducatteau, D., Rousseau, M., Chmielowska, M., Ramdani, M., De Jaeger, J.-C
Published in IEEE electron device letters (01.04.2013)
Published in IEEE electron device letters (01.04.2013)
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Journal Article
InAlN/GaN HEMTs on Sapphire Substrate With 2.9-W/mm Output Power Density at 18 GHz
Lecourt, F., Ketteniss, N., Behmenburg, H., Defrance, N., Hoel, V., Eickelkamp, M., Vescan, A., Giesen, C., Heuken, M., De Jaeger, J.-C
Published in IEEE electron device letters (01.11.2011)
Published in IEEE electron device letters (01.11.2011)
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Journal Article
Punch-through in short-channel AlGaN/GaN HFETs
Uren, M.J., Nash, K.J., Balmer, R.S., Martin, T., Morvan, E., Caillas, N., Delage, S.L., Ducatteau, D., Grimbert, B., De Jaeger, J.C.
Published in IEEE transactions on electron devices (01.02.2006)
Published in IEEE transactions on electron devices (01.02.2006)
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Journal Article
High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape
Lesecq, M, Hoel, V, Lecavelier des Etangs-Levallois, A, Pichonat, E, Douvry, Y, De Jaeger, J C
Published in IEEE electron device letters (01.02.2011)
Published in IEEE electron device letters (01.02.2011)
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Journal Article
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
Ducatteau, D., Minko, A., Hoel, V., Morvan, E., Delos, E., Grimbert, B., Lahreche, H., Bove, P., Gaquiere, C., De Jaeger, J.C., Delage, S.
Published in IEEE electron device letters (01.01.2006)
Published in IEEE electron device letters (01.01.2006)
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Journal Article
Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices
Benbakhti, B., Soltani, A., Kalna, K., Rousseau, M., De Jaeger, J.-C.
Published in IEEE transactions on electron devices (01.10.2009)
Published in IEEE transactions on electron devices (01.10.2009)
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Journal Article
Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy
Stolz, A., Soltani, A., Abdallah, B., Charrier, J., Deresmes, D., Jouan, P.-Y., Djouadi, M.A., Dogheche, E., De Jaeger, J.-C.
Published in Thin solid films (01.05.2013)
Published in Thin solid films (01.05.2013)
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Journal Article
Theoretical study of Lamb acoustic waves characteristics in a AlN/diamond composite membranes for Super High Frequency range operating devices
Talbi, A., Soltani, A., Mortet, V., Gerbedoen, J.-C., De Jaeger, J.-C., Pernod, P.
Published in Diamond and related materials (01.02.2012)
Published in Diamond and related materials (01.02.2012)
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Journal Article
Development and analysis of low resistance ohmic contact to n-AlGaN/GaN HEMT
Soltani, A., BenMoussa, A., Touati, S., Hoël, V., De Jaeger, J.-C., Laureyns, J., Cordier, Y., Marhic, C., Djouadi, M.A., Dua, C.
Published in Diamond and related materials (01.02.2007)
Published in Diamond and related materials (01.02.2007)
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Journal Article
AlGaN/GaN MISHEMT with hBN as gate dielectric
Gerbedoen, J.-C., Soltani, A., Mattalah, M., Moreau, M., Thevenin, P., De Jaeger, J.-C.
Published in Diamond and related materials (01.05.2009)
Published in Diamond and related materials (01.05.2009)
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Journal Article
GaN high electron mobility transistors on silicon substrates with MBE/PVD AlN seed layers
Cordier, Y., Frayssinet, E., Chmielowska, M., Nemoz, M., Courville, A., Vennéguès, P., Mierry, P. De, Chenot, S., Camus, J., Aissa, K. Ait, Simon, Q., Brizoual, L. Le, Djouadi, M. A., Defrance, N., Lesecq, M., Altuntas, P., Cutivet, A., Agboton, A., Jaeger, J.-C. De
Published in Physica status solidi. C (01.02.2014)
Published in Physica status solidi. C (01.02.2014)
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Journal Article
New developments on diamond photodetector for VUV solar observations
BenMoussa, A, Soltani, A, Haenen, K, Kroth, U, Mortet, V, Barkad, H A, Bolsee, D, Hermans, C, Richter, M, De Jaeger, J C, Hochedez, J F
Published in Semiconductor science and technology (01.03.2008)
Published in Semiconductor science and technology (01.03.2008)
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Journal Article
Analysis of the SiO2/Si3N4 passivation bilayer thickness on the rectifier behavior of AlGaN/GaN HEMTs on (111) silicon substrate
Mattalah, M., Soltani, A., Gerbedoen, J.-C., Ahaitouf, Az, Defrance, N., Cordier, Y., De Jaeger, J.-C.
Published in Physica status solidi. C (01.03.2012)
Published in Physica status solidi. C (01.03.2012)
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Journal Article
Study of the hBN/InP interface by deep level transient and photoluminescence spectroscopies
Mattalah, M., Telia, A., Soltani, A., De Jaeger, J.-C., Thevenin, P., Bath, A., Akkal, B., Abid, H.
Published in Thin solid films (30.04.2008)
Published in Thin solid films (30.04.2008)
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Journal Article
Loss characteristics in coplanar propagation waveguides fabricated on IIa diamond substrates
Defrance, N., Gerbedoen, J.-C., Soltani, A., De Jaeger, J.-C., Morse, J.
Published in Diamond and related materials (01.05.2009)
Published in Diamond and related materials (01.05.2009)
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Journal Article
Conference Proceeding
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs
Malbert, N., Labat, N., Curutchet, A., Sury, C., Hoel, V., de Jaeger, J.-C., Defrance, N., Douvry, Y., Dua, C., Oualli, M., Bru-Chevallier, C., Bluet, J.-M., Chikhaoui, W.
Published in Microelectronics and reliability (2009)
Published in Microelectronics and reliability (2009)
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Journal Article
Electron transport properties of gallium nitride for microscopic power device modelling
Benbakhti, B, Rousseau, M, Soltani, A, Jaeger, J-C De
Published in Journal of physics. Conference series (01.11.2009)
Published in Journal of physics. Conference series (01.11.2009)
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Journal Article