Effect of Different Quantum Well Structures on the Output Power Performance of GaN-Based Light-Emitting Diodes
Han, Jaecheon, Kang, Gucheol, Kang, Daesung, Moon, Yongtae, Jeong, Hwanhee, Song, June-O, Seong, Tae-Yeon
Published in Journal of electronic materials (01.10.2013)
Published in Journal of electronic materials (01.10.2013)
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Journal Article
Formation of low resistance Ti/Al-based ohmic contacts on (11–22) semipolar n-type GaN
Park, Jae-Seong, Han, Jaecheon, Seong, Tae-Yeon
Published in Journal of alloys and compounds (15.12.2015)
Published in Journal of alloys and compounds (15.12.2015)
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Journal Article
Optimizing n-type contact design and chip size for high-performance indium gallium nitride/gallium nitride-based thin-film vertical light-emitting diode
Han, Jaecheon, Lee, Daehee, Jin, Boram, Jeong, Hwanhee, Song, June-O, Seong, Tae-Yeon
Published in Materials science in semiconductor processing (01.03.2015)
Published in Materials science in semiconductor processing (01.03.2015)
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Journal Article
Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 −2 2) plane p-type GaN
Park, Jae-Seong, Han, Jaecheon, Seong, Tae-Yeon
Published in Superlattices and microstructures (01.11.2014)
Published in Superlattices and microstructures (01.11.2014)
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Journal Article
Improving the output power of near-ultraviolet InGaN/GaN-based light emitting diodes by enhancing the thermal and electrical properties of Ag-based reflector
Park, Jae-Seong, Han, Jaecheon, Han, Jae-Woong, Seo, Heonjin, Oh, Jung-Tak, Seong, Tae-Yeon
Published in Superlattices and microstructures (01.12.2013)
Published in Superlattices and microstructures (01.12.2013)
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