An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR
Jardel, O., De Groote, F., Reveyrand, T., Jacquet, J.-C., Charbonniaud, C., Teyssier, J.-P., Floriot, D., Quere, R.
Published in IEEE transactions on microwave theory and techniques (01.12.2007)
Published in IEEE transactions on microwave theory and techniques (01.12.2007)
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Conference Proceeding
SThM Temperature Mapping and Nonlinear Thermal Resistance Evolution With Bias on AlGaN/GaN HEMT Devices
Aubry, R., Jacquet, J.-C., Weaver, J., Durand, O., Dobson, P., Mills, G., di Forte-Poisson, M.-A., Cassette, S., Delage, S.-L.
Published in IEEE transactions on electron devices (01.03.2007)
Published in IEEE transactions on electron devices (01.03.2007)
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Journal Article
Thermal Characterization Using Optical Methods of AlGaN/GaN HEMTs on SiC Substrate in RF Operating Conditions
Baczkowski, Leny, Jacquet, Jean-Claude, Jardel, Olivier, Gaquiere, Chistophe, Moreau, Myriam, Carisetti, Dominique, Brunel, Laurent, Vouzelaud, Franck, Mancuso, Yves
Published in IEEE transactions on electron devices (01.12.2015)
Published in IEEE transactions on electron devices (01.12.2015)
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Journal Article
A new nonlinear HEMT model for AlGaN/GaN switch applications
Callet, Guillaume, Faraj, Jad, Jardel, Olivier, Charbonniaud, Christophe, Jacquet, Jean-Claude, Reveyrand, Tibault, Morvan, Erwan, Piotrowicz, Stéphane, Teyssier, Jean-Pierre, Quéré, R.
Published in International journal of microwave and wireless technologies (01.08.2010)
Published in International journal of microwave and wireless technologies (01.08.2010)
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Journal Article
Theoretical and Experimental Substractions of Device Temperature Determination Utilizing I-V Characterization Applied on AlGaN/GaN HEMT
Florovič, Martin, Kováč, Jaroslav, Chvála, Aleš, Kováč, Jaroslav, Jacquet, Jean-Claude, Delage, Sylvain Laurent
Published in Electronics (Basel) (01.11.2021)
Published in Electronics (Basel) (01.11.2021)
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Journal Article
InAlGaN/GaN with AlGaN back-barrier HEMT technology on SiC for Ka-band applications
Piotrowicz, Stéphane, Jacquet, Jean-Claude, Gamarra, Piero, Patard, Olivier, Dua, Christian, Chartier, Eric, Michel, Nicolas, Oualli, Mourad, Lacam, Cedric, Potier, Clément, Altuntas, Philippe, Delage, Sylvain
Published in International journal of microwave and wireless technologies (01.02.2018)
Published in International journal of microwave and wireless technologies (01.02.2018)
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Journal Article
Channel temperature analysis of AlGaN/GaN HEMTs in quasi-static and pulse operation mode
Florovič, Martin, Szobolovszký, Róbert, Kováč, Jaroslav, Kováč, Jaroslav, Chvála, Aleš, Jacquet, Jean-Claude, Delage, Sylvain Laurent
Published in Journal of Electrical Engineering (01.09.2018)
Published in Journal of Electrical Engineering (01.09.2018)
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Journal Article
Numerical simulation and characterization of trapping noise in InGaP–GaAs heterojunctions devices at high injection
Nallatamby, Jean-Christophe, Abdelhadi, Khaled, Jacquet, Jean-Claude, Prigent, Michel, Floriot, Didier, Delage, Sylvain, Obregon, Juan
Published in Solid-state electronics (01.03.2013)
Published in Solid-state electronics (01.03.2013)
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Comprehensive analysis of GR noise in InGaP–GaAs HBT by physics-based simulation and low frequency characterization
Nallatamby, Jean-Christophe, Laurent, Sylvain, Prigent, Michel, Jacquet, Jean-Claude, Floriot, Didier, Delage, Sylvain
Published in Journal of computational electronics (01.03.2015)
Published in Journal of computational electronics (01.03.2015)
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Journal Article
Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters
Potier, Clément, Jacquet, Jean-Claude, Dua, Christian, Martin, Audrey, Campovecchio, Michel, Oualli, Mourad, Jardel, Olivier, Piotrowicz, Stéphane, Laurent, Sylvain, Aubry, Raphaël, Patard, Olivier, Gamarra, Piero, di Forte-Poisson, Marie-Antoinette, Delage, Sylvain L., Quéré, Raymond
Published in International journal of microwave and wireless technologies (01.06.2015)
Published in International journal of microwave and wireless technologies (01.06.2015)
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Journal Article
InAlN/GaN HEMTs based L-band high-power packaged amplifiers
Jardel, Olivier, Jacquet, Jean-Claude, Baczkowski, Lény, Carisetti, Dominique, Lancereau, Didier, Olivier, Maxime, Aubry, Raphaël, di Forte Poisson, Marie-Antoinette, Dua, Christian, Piotrowicz, Stéphane, Delage, Sylvain L.
Published in International journal of microwave and wireless technologies (01.12.2014)
Published in International journal of microwave and wireless technologies (01.12.2014)
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Journal Article
Overview of AlGaN/GaN HEMT technology for L- to Ku-band applications
Piotrowicz, Stéphane, Morvan, Erwan, Aubry, Raphaël, Callet, Guillaume, Chartier, Eric, Dua, Christian, Dufraisse, Jérémy, Floriot, Didier, Jacquet, Jean-Claude, Jardel, Olivier, Mancuso, Yves, Mallet-Guy, Benoit, Oualli, Mourad, Ouarch, Zineb, Di-Forte Poisson, Marie-Antoinette, Sarazin, Nicolas, Stanislawiak, Michel, Delage, Sylvain
Published in International journal of microwave and wireless technologies (01.02.2010)
Published in International journal of microwave and wireless technologies (01.02.2010)
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Journal Article
Thermal characterization of high power AlGaN/GaN HEMTs using infra red microscopy and thermoreflectance
Baczkowski, Leny, Carisetti, Dominique, Jacquet, Jean-Claude, Kendig, Dustin, Vouzelaud, Franck, Gaquiere, Christophe
Published in 20th International Workshop on Thermal Investigations of ICs and Systems (01.09.2014)
Published in 20th International Workshop on Thermal Investigations of ICs and Systems (01.09.2014)
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Conference Proceeding
Characterization and modeling of bias dependent breakdown and self-heating in GaInP/GaAs power HBT to improve high power amplifier design
Heckmann, S., Sommet, R., Nebus, J.-M., Jacquet, J.-C., Floriot, D., Auxemery, P., Quere, R.
Published in IEEE transactions on microwave theory and techniques (01.12.2002)
Published in IEEE transactions on microwave theory and techniques (01.12.2002)
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Journal Article
Temperature measurements in RF operating conditions of AlGaN/GaN HEMTs using IR microscopy and Raman spectroscopy
Baczkowski, Leny, Jacquet, Jean-Claude, Jardel, Olivier, Gaquiere, Christophe, Moreau, Myriam, Carisetti, Dominique, Brunel, Laurent, Vouzelaud, Franck
Published in 2015 10th European Microwave Integrated Circuits Conference (EuMIC) (01.09.2015)
Published in 2015 10th European Microwave Integrated Circuits Conference (EuMIC) (01.09.2015)
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Conference Proceeding
Numerical simulation of LF noise in semiconductor device using the transmission-line equivalent circuit of carrier transport model
Hadi, Khaled Abdel, Nallatamby, Jean-Christophe, Prigent, Michel, Jacquet, Jean-Claude
Published in 2013 22nd International Conference on Noise and Fluctuations (ICNF) (01.06.2013)
Published in 2013 22nd International Conference on Noise and Fluctuations (ICNF) (01.06.2013)
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Conference Proceeding
Measurement and modelling of static and dynamic breakdowns of power GaInP/GaAs HBTs
Heckmann, S., Nebus, J.-M., Quere, R., Jacquet, J.-C., Floriot, D., Auxemery, P.
Published in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) (2002)
Published in 2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278) (2002)
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Conference Proceeding
Journal Article
A comparison of 2-D simulations and measurements of low frequency noise on InGaP/GaAs HBT transistors at low and high level injection
Hadi, Khaled Abdel, Al Hajjar, Ahmad, Nallatamby, Jean-Christophe, Prigent, Michel, Jacquet, Jean-Claude, Delage, Sylvain, Floriot, Didier
Published in 2013 22nd International Conference on Noise and Fluctuations (ICNF) (01.06.2013)
Published in 2013 22nd International Conference on Noise and Fluctuations (ICNF) (01.06.2013)
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Conference Proceeding
Numerical simulation and characterization of trapping noise in InGaP-GaAs heterojunctions devices at high injection
NALLATAMBY, Jean-Christophe, ABDELHADI, Khaled, JACQUET, Jean-Claude, PRIGENT, Michel, FLORIOT, Didier, DELAGE, Sylvain, OBREGON, Juan
Published in Solid-state electronics (2013)
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Published in Solid-state electronics (2013)
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