Indentation-induced dislocations and cracks in (0001) freestanding and epitaxial GaN
Ratschinski, I, Leipner, H S, Heyroth, F, Fränzel, W, Moutanabbir, O, Hammer, R, Jurisch, M
Published in Journal of physics. Conference series (01.02.2011)
Published in Journal of physics. Conference series (01.02.2011)
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Journal Article
LEC- and VGF-growth of SI GaAs single crystals—recent developments and current issues
Jurisch, M., Börner, F., Bünger, Th, Eichler, St, Flade, T., Kretzer, U., Köhler, A., Stenzenberger, J., Weinert, B.
Published in Journal of crystal growth (15.02.2005)
Published in Journal of crystal growth (15.02.2005)
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Journal Article
Conference Proceeding
Micro-Raman study of strain fields around dislocations in GaAs
Irmer, G., Jurisch, M.
Published in Physica status solidi. A, Applications and materials science (01.07.2007)
Published in Physica status solidi. A, Applications and materials science (01.07.2007)
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Journal Article
Micro-Raman study of strain fields around dislocations in GaAs
Irmer, G., Jurisch, M.
Published in Physica status solidi. A, Applications and materials science (01.07.2007)
Published in Physica status solidi. A, Applications and materials science (01.07.2007)
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Journal Article
Inclusions in LEC-grown Si GaAs single crystals
Eichler, S., Fliegel, W., Jurisch, M., Köhler, A., Naumann, M., Rockoff, A.
Published in Journal of crystal growth (01.04.2008)
Published in Journal of crystal growth (01.04.2008)
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Journal Article
Dislocations and cracks at Vickers indentations in GaN and GaAs bulk crystals
Ratschinski, I., Leipner, H. S., Heyroth, F., Fränzel, W., Hammer, R., Jurisch, M.
Published in Physica status solidi. C (01.04.2011)
Published in Physica status solidi. C (01.04.2011)
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Journal Article
Dislocations and cracks at Vickers indentations in (0 0 0 1) GaN single crystals
Ratschinski, I., Leipner, H.S., Heyroth, F., Fränzel, W., Hammer, R., Jurisch, M.
Published in Philosophical magazine letters (01.08.2010)
Published in Philosophical magazine letters (01.08.2010)
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Journal Article
Crystal growth by a modified vapor pressure-controlled Czochralski (VCz) technique
Neubert, M., Rudolph, P., Frank-Rotsch, Ch, Czupalla, M., Trompa, K., Pietsch, M., Jurisch, M., Eichler, St, Weinert, B., Scheffer-Czygan, M.
Published in Journal of crystal growth (01.04.2008)
Published in Journal of crystal growth (01.04.2008)
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Journal Article
Stress analysis and bending tests for GaAs wafers
Dreyer, W., Duderstadt, F., Eichler, S., Jurisch, M.
Published in Microelectronics and reliability (01.05.2006)
Published in Microelectronics and reliability (01.05.2006)
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Journal Article
Photoelastic characterization of residual stress in GaAs-wafers
Geiler, H.D., Karge, H., Wagner, M., Eichler, St, Jurisch, M., Kretzer, U., Scheffer-Czygan, M.
Published in Materials science in semiconductor processing (01.02.2006)
Published in Materials science in semiconductor processing (01.02.2006)
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Journal Article
Conference Proceeding
Investigation of residual dislocations in VGF-grown Si-doped GaAs
Birkmann, B., Stenzenberger, J., Jurisch, M., Härtwig, J., Alex, V., Müller, G.
Published in Journal of crystal growth (01.04.2005)
Published in Journal of crystal growth (01.04.2005)
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Journal Article
Growth and characterization of 200 mm SI GaAs crystals grown by the VGF method
Stenzenberger, J, Bünger, T, Börner, F, Eichler, S, Flade, T, Hammer, R, Jurisch, M, Kretzer, U, Teichert, S, Weinert, B
Published in Journal of crystal growth (01.03.2003)
Published in Journal of crystal growth (01.03.2003)
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Journal Article