Embedded ferroelectric memory technology with completely encapsulated hydrogen barrier structure
Nagano, Y., Mikawa, T., Kutsunai, T., Natsume, S., Tatsunari, T., Ito, T., Noma, A., Nasu, T., Hayashi, S., Hirano, H., Gohou, Y., Judai, Y., Fujii, E.
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
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Journal Article
Non-volatile memories using SrBi2Ta2O9 ferroelectrics
Jones, R. E., Chu, P. Y., Jiang, B., Melnick, B. M., Taylor, D. J., White, B. E., Zafar, S., Price, D., Zurcher, P., Gillespie, S. J., Otsuki, T., Sumi, T., Judai, Y., Uemoto, Y., Fujii, E., Hayashi, S., Moriwaki, N., Azuma, M., Shimada, Y., Arita, K., Hirano, H., Nakane, J., Nakakum, T., Kano, G.
Published in Integrated ferroelectrics (01.01.1997)
Published in Integrated ferroelectrics (01.01.1997)
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Journal Article
Highly-reliable ferroelectric memory technology with bismuth-layer structured thin films (Y-1 family)
Fujii, E., Otsuki, T., Judai, Y., Shimada, Y., Azuma, M., Uemoto, Y., Nagano, Y., Nasu, T., Izutsu, Y., Matsuda, A., Nakao, K., Tanaka, K., Hirano, K., Ito, T., Mikawa, T., Kutsunai, T., McMillan, L.D., Paz de Araujo, C.A.
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
Published in International Electron Devices Meeting. IEDM Technical Digest (1997)
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Conference Proceeding
A highly reliable ferroelectric memory technology with SrBi sub(2)Ta sub(2)O sub(9 )-based material and metal covering cell structure
Fujii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.06.2001)
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Published in IEEE transactions on electron devices (01.06.2001)
Journal Article
A highly reliable ferroelectric memory technology with SrBi)2)Ta)2)O)9)-based material and metal covering cellstructure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
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Journal Article
A highly reliable ferroelectric memory technology with SrBi2 Ta2O9-based material and metal covering cell structure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
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Journal Article
A highly reliable ferroelectric memory technology with SrBi/sub 2/Ta/sub 2/O/sub 9/-based material and metal covering cell structure
Fajii, E., Judai, Y., Ito, T., Kutsunai, T., Nagano, Y., Noma, A., Nasu, T., Izutsu, Y., Mikawa, T., Yasuoka, H., Azuma, M., Shimada, Y., Sasai, Y., Sato, K., Otsuki, T.
Published in IEEE transactions on electron devices (01.06.2001)
Published in IEEE transactions on electron devices (01.06.2001)
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Journal Article
Voltage Shift Effect on Retention Failure in Ferroelectric Memories
Nakao, Keisaku, Judai, Yuji, Azuma, Masamichi, Shimada, Yasuhiro, Otsuki, Tatsuo
Published in Japanese Journal of Applied Physics (01.09.1998)
Published in Japanese Journal of Applied Physics (01.09.1998)
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Journal Article
A highly reliable ferroelectric memory technology with SrBi sub(2 )Ta sub(2)O sub(9)-bas ed material and metal covering cell structure
Fajii, E, Judai, Y, Ito, T, Kutsunai, T, Nagano, Y, Noma, A, Nasu, T, Izutsu, Y, Mikawa, T, Yasuoka, H, Azuma, M, Shimada, Y, Sasai, Y, Sato, K, Otsuki, T
Published in IEEE transactions on electron devices (01.01.2001)
Published in IEEE transactions on electron devices (01.01.2001)
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Journal Article
Ferroelectric nonvolatile memory technology and its applications
SUMI, T, JUDAI, Y, NASU, T, NAGANO, Y, INOUE, A, MATSUDA, A, FUJI, E, SHIMADA, Y, OTSUKI, T, HIRANO, K, ITO, T, MIKAWA, T, TAKEO, M, AZUMA, M, HAYASHI, S.-I, UEMOTO, Y, ARITA, K
Published in Japanese Journal of Applied Physics (1996)
Published in Japanese Journal of Applied Physics (1996)
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Conference Proceeding
Journal Article
Advanced LSI embedded with FeRAM for contactless IC cards and its manufacturing technology
Shimada, Y., Arita, K., Fujii, E., Nasu, T., Nagano, Y., Noma, A., Izutsu, Y., Nakao, K., Tanaka, K., Yamada, T., Uemoto, Y., Asari, K., Nakane, G., Inoue, A., Sumi, T., Nakakuma, T., Chaya, S., Hirano, H., Judai, Y., Sasai, Y., Otsuki, T.
Published in Integrated ferroelectrics (01.11.1999)
Published in Integrated ferroelectrics (01.11.1999)
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Journal Article
Non-volatile memories using SrBi 2 Ta 2 O 9 ferroelectrics
Jones, R. E., Chu, P. Y., Jiang, B., Melnick, B. M., Taylor, D. J., White, B. E., Zafar, S., Price, D., Zurcher, P., Gillespie, S. J., Otsuki, T., Sumi, T., Judai, Y., Uemoto, Y., Fujii, E., Hayashi, S., Moriwaki, N., Azuma, M., Shimada, Y., Arita, K., Hirano, H., Nakane, J., Nakakum, T., Kano, G.
Published in Integrated ferroelectrics (01.09.1997)
Published in Integrated ferroelectrics (01.09.1997)
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Journal Article
0.18 /spl mu/m SBT-based embedded FeRAM operating at a low voltage of 1.1 V
Nagano, Y., Mikawa, T., Kutsunai, T., Hayashi, S., Nasu, T., Natsume, S., Tatsunari, T., Ito, T., Goto, S., Yano, H., Noma, A., Nagahashi, K., Miki, T., Sakagami, M., Izutsu, Y., Nakakuma, T., Hirano, H., Iwanari, S., Murakuki, Y., Yamaoka, K., Goho, Y., Judai, Y., Fujii, E., Sato, K.
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
Published in 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407) (2003)
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Conference Proceeding
A microcontroller embedded with 4 Kbit ferroelectric non-volatile memory
Fukushima, T., Kawahara, A., Nanba, T., Matsumoto, M., Nishimoto, T., Ikeda, N., Judai, Y., Sumi, T., Arita, K., Otsuki, T.
Published in 1996 Symposium on VLSI Circuits. Digest of Technical Papers (1996)
Published in 1996 Symposium on VLSI Circuits. Digest of Technical Papers (1996)
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Conference Proceeding
Ferroelectric nonvolatile memory technology with bismuth layer-structured ferroelectric materials
Arita, K., Shimada, Y., Uemoto, Y., Hayashi, S., Azuma, M., Judai, Y., Sumi, T., Fujii, E., Otsuki, T., McMillan, L.D., De Araujo, C.A.P.
Published in ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics (1996)
Published in ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics (1996)
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Conference Proceeding
A 256 kb nonvolatile ferroelectric memory at 3 V and 100 ns
Sumi, T., Moriwaki, N., Nakane, G., Nakakuma, T., Judai, Y., Uemoto, Y., Nagano, Y., Hayashi, S., Azuma, M., Fujii, E., Katsu, S.-I., Otsuki, T., McMillan, L., Paz de Araujo, C., Kano, G.
Published in Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94 (1994)
Published in Proceedings of IEEE International Solid-State Circuits Conference - ISSCC '94 (1994)
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