Cervical screening in foreign domestic workers in Singapore
Eng, Julia C L, Er, Joyce B T, Wan, Carrie S Y, Lim, Y K, Ismail-Pratt, Ida, Ng, Joseph S Y
Published in Annals of the Academy of Medicine, Singapore (01.02.2021)
Published in Annals of the Academy of Medicine, Singapore (01.02.2021)
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Journal Article
Growth of dislocation-free GaN islands on Si(1 1 1) using a scandium nitride buffer layer
Moram, M.A., Kappers, M.J., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.
Published in Journal of crystal growth (15.10.2007)
Published in Journal of crystal growth (15.10.2007)
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Journal Article
Microstructure of epitaxial scandium nitride films grown on silicon
Moram, M.A., Joyce, T.B., Chalker, P.R., Barber, Z.H., Humphreys, C.J.
Published in Applied surface science (15.10.2006)
Published in Applied surface science (15.10.2006)
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Journal Article
Electronic structure and local distortions in epitaxial ScGaN films
Knoll, S M, Rovezzi, M, Zhang, S, Joyce, T B, Moram, M A
Published in Journal of physics. Condensed matter (04.06.2014)
Published in Journal of physics. Condensed matter (04.06.2014)
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Journal Article
The microstructural influence of nitrogen incorporation in dilute nitride semiconductors
Chalker, P R, Bullough, T J, Gass, M, Thomas, S, Joyce, T B
Published in Journal of physics. Condensed matter (11.08.2004)
Published in Journal of physics. Condensed matter (11.08.2004)
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Journal Article
In situ optical monitoring of layer composition in the chemical beam epitaxy of AlGaAs from amine-alane sources
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Conference Proceeding
Journal Article
Structural properties of wurtzitelike ScGaN films grown by NH3-molecular beam epitaxy
Moram, M. A., Zhang, Y., Joyce, T. B., Holec, D., Chalker, P. R., Mayrhofer, P. H., Kappers, M. J., Humphreys, C. J.
Published in Journal of applied physics (01.12.2009)
Published in Journal of applied physics (01.12.2009)
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Journal Article
Growth, microstructure and morphology of epitaxial ScGaN films
Knoll, S. M., Zhang, S., Joyce, T. B., Kappers, M. J., Humphreys, C. J., Moram, M. A.
Published in Physica status solidi. A, Applications and materials science (01.01.2012)
Published in Physica status solidi. A, Applications and materials science (01.01.2012)
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Journal Article
Fabrication of epitaxial III-nitride cantilevers on silicon (111) substrates
DAVIES, S, HUANG, T. S, MURRAY, R. T, GASS, M. H, PAPWORTH, A. J, JOYCE, T. B, CHALKER, P. R
Published in Journal of materials science. Materials in electronics (01.11.2004)
Published in Journal of materials science. Materials in electronics (01.11.2004)
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Journal Article
Compositional variation in as-grown GaInNAs/GaAs quantum well structures
Chalker, P.R, Davock, H, Thomas, S, Joyce, T.B, Bullough, T.J, Potter, R.J, Balkan, N
Published in Journal of crystal growth (01.11.2001)
Published in Journal of crystal growth (01.11.2001)
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Journal Article
Nitrogen incorporation in GaInNAs and GaAsN near the solubility limit
Thomas, S, White, S, Chalker, P R, Bullough, T J, Joyce, T B
Published in Journal of materials science. Materials in electronics (01.09.2002)
Published in Journal of materials science. Materials in electronics (01.09.2002)
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Journal Article
Reflectance anisotropy spectroscopy studies of the growth of carbon-doped GaAs by chemical beam epitaxy
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Conference Proceeding
A calibration of the H-CAS stretch mode in GaAs
Davidson, B R, Newman, R C, Joyce, T B, Bullough, T J
Published in Semiconductor science and technology (01.03.1996)
Published in Semiconductor science and technology (01.03.1996)
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Journal Article
Beam equivalent pressure measurements in chemical beam epitaxy
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Conference Proceeding
An in-situ laser-light scattering study of the development of surface topography during GaAs and InxGa1-xAs chemical beam epitaxy
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Conference Proceeding
Journal Article
Studies into the carbon doping of GaAs, AlGaAs and AlAs grown by CBE using neopentyl iodide
Coward, K.M, Jones, A.C, Pemble, M.E, Joyce, T.B, Smith, L.M
Published in Journal of crystal growth (01.02.2000)
Published in Journal of crystal growth (01.02.2000)
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Conference Proceeding