Composition, chemical structure, and electronic band structure of rare earth oxide/Si(1 0 0) interfacial transition layer
Hattori, T, Yoshida, T, Shiraishi, T, Takahashi, K, Nohira, H, Joumori, S, Nakajima, K, Suzuki, M, Kimura, K, Kashiwagi, I, Ohshima, C, Ohmi, S, Iwai, H
Published in Microelectronic engineering (01.04.2004)
Published in Microelectronic engineering (01.04.2004)
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Conference Proceeding
Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(1 0 0) interfacial transition layer
NOHIRA, H, SHIRAISHI, T, SUZUKI, M, KIMURA, K, TAKAHASHI, K, HATTORI, T, KASHIWAGI, I, OHSHIMA, C, OHMI, S, IWAI, H, JOUMORI, S, NAKAJIMA, K
Published in Applied surface science (15.07.2004)
Published in Applied surface science (15.07.2004)
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Conference Proceeding
Journal Article
Characterization of HfO2/Si(001) interface with high-resolution Rutherford backscattering spectroscopy
Nakajima, K., Joumori, S., Suzuki, M., Kimura, K., Osipowicz, T., Tok, K.L., Zheng, J.Z., See, A., Zhang, B.C.
Published in Applied surface science (15.10.2004)
Published in Applied surface science (15.10.2004)
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Journal Article
Conference Proceeding
Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La 2O 3/Si(1 0 0) interfacial transition layer
Nohira, H, Shiraishi, T, Takahashi, K, Hattori, T, Kashiwagi, I, Ohshima, C, Ohmi, S, Iwai, H, Joumori, S, Nakajima, K, Suzuki, M, Kimura, K
Published in Applied surface science (2004)
Published in Applied surface science (2004)
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Journal Article