Effect of a noble annealing system on nickel silicide formation
Sug-Woo Jung, Hyun-Su Kim, Eun-Ji Jung, Seong-Hwee Cheong, Jong-Ho Yun, Kwan-Jong Roh, Ja-Hum Ku, Gil-Heyun Choi, Sung-Tae Kim, U-In Chung, Joo-Tae Moon, Byung-Il Ryu
Published in 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004 (2004)
Published in 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004 (2004)
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Conference Proceeding
High performance cell technology featuring sub-100nm DRAM with multi-gigabit density
LEE, Byung-Chan, YOO, Jong-Ryeol, LEE, Deok-Hyung, KIM, Cheol-Sung, JUNG, In-Soo, CHOI, Siyoung, CHUNG, U-In, MOON, Joo-Tae
Published in Digest. International Electron Devices Meeting (2002)
Published in Digest. International Electron Devices Meeting (2002)
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Conference Proceeding
Front-end-of-line (FEOL) optimization for high-performance, high-reliable strained-Si MOSFETs; from virtual substrate to gate oxidation
LEE, Jong-Wook, LEE, Sun-Ghil, PARK, Seong-Geon, PARK, Hong-Bae, SON, Yong-Hoon, LEE, Young-Eun, JIN, Beom-Jun, LEE, Hye-Lan, KOO, Bon-Young, KANG, Sang-Bom, YU GYUN SHIN, CHUNG, U.-In, KIM, Young-Pil, MOON, Joo-Tae, RYU, Byung-Il, KIM, Chul-Sung, CHO, Hag-Ju, KIM, Seung-Beom, JUNG, In-Soo, LEE, Deok-Hyung, KIM, Dong-Chan, JEON, Taek-Soo
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
Published in IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 (2004)
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Conference Proceeding
Patterning of W/WN x/poly-Si gate electrode using Cl 2/O 2 plasmas
Kim, Hyoun-Woo, Ju, Byong-Sun, Kang, Chang-Jin, Moon, Joo-Tae
Published in Microelectronic engineering (2003)
Published in Microelectronic engineering (2003)
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Journal Article
Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure
Pil Kim, Young, Chung, Uin, Tae Moon, Joo, Kim, Sang U.
Published in Microelectronics and reliability (01.09.2003)
Published in Microelectronics and reliability (01.09.2003)
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Journal Article
Highly Reliable 0.15 µm/14 F 2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO 3 Buffer Layer
Heo, Jang-Eun, Bae, Byoung-Jae, Yoo, Dong-Chul, Nam, Sang-Don, Lim, Ji-Eun, Im, Dong-Hyun, Joo, Suk-Ho, Jung, Yong-Ju, Choi, Suk-Hun, Park, Soon-Oh, Kim, Hee-Seok, Chung, U-In, Moon, Joo-Tae
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta 2 O 5 /Ru Capacitor for 50 nm Dynamic Random Access Memory
Lim, HanJin, Chung, Suk-Jin, Lee, Kwang Hee, Lee, Jinil, Kim, Jin Yong, Yoo, Cha-Young, Kim, Sung-Tae, Chung, U-In, Moon, Joo-Tae
Published in Japanese Journal of Applied Physics (01.04.2005)
Published in Japanese Journal of Applied Physics (01.04.2005)
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Journal Article
Sub-6F2 Charge Trap Dynamic Random Access Memory Using a Novel Operation Scheme
Huo, Zongliang, Baik, Seungjae, Kim, Shieun, Yeo, In-seok, Chung, U-in, Moon, Joo Tae
Published in 2006 64th Device Research Conference (01.06.2006)
Published in 2006 64th Device Research Conference (01.06.2006)
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Conference Proceeding
Optimum TiSi 2 Ohmic Contact Process for Sub-100 nm Devices
Park, Hee Sook, Lee, Jong Myeong, Lee, Sang Woo, Park, Jea Hwa, Moon, Kwang Jin, Kang, Sang Bom, Choi, Gil Heyun, Chung, U In, Moon, Joo Tae
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
A comparative analysis of thermal gate oxide on strained Si/relaxed SiGe layer for reliability prediction of strained Si MOSFETs
Lee, Sun-Ghil, Kim, Young Pil, Lee, Hye-Lan, Jin, Beom Jun, Lee, Jong-Wook, Shin, Yu Gyun, Choi, Siyoung, Chung, U-In, Moon, Joo Tae
Published in Materials science in semiconductor processing (01.02.2005)
Published in Materials science in semiconductor processing (01.02.2005)
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Journal Article
Enhanced Retention Characteristics of Pb(Zr, Ti)O 3 Capacitors by Ozone Treatment
Lee, Kyu-Mann, An, Hyeong-Geun, Lee, June-Key, Lee, Yong-Tak, Lee, Sang-Woo, Joo, Suk-Ho, Nam, Sang-Don, Park, Kun-Sang, Lee, Moon-Sook, Park, Soon-Oh, Kang, Ho-Kyu, Moon, Joo-Tae
Published in Japanese Journal of Applied Physics (01.08.2001)
Published in Japanese Journal of Applied Physics (01.08.2001)
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Journal Article
Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta 2 O 5 and Al 2 O 3 Metal Insulator Silicon Capacitor for 0.13 µm Technology and Beyond
Lim, Hyun Seok, Kang, Sang Bom, Jeon, In Sang, Choi, Gil Heyun, Park, Young Wook, Lee, Sang In, Moon, Joo Tae
Published in Japanese Journal of Applied Physics (01.04.2001)
Published in Japanese Journal of Applied Physics (01.04.2001)
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Journal Article
ATOMIC LAYER DEPOSITION- AND CHEMICAL VAPOR DEPOSITION-TiN TOP ELECTRODE OPTIMIZATION FOR THE RELIABILITY OF Ta2O5 AND Al2O3 METAL INSULATOR SILICON CAPACITOR FOR 0.13 mu m TECHNOLOGY AND BEYOND
Lim, H S, Kang, S B, Jeon, I S, Choi, G H, Park, Y W, Lee, S I
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 4B, pp. 2669-2673. 2001 (2001)
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 4B, pp. 2669-2673. 2001 (2001)
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Journal Article
Integration of Ferroelectric Random Access Memory Devices with Ir/IrO 2 /Pb(Zr x Ti 1- x )\barO 3 /Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr x Ti 1- x )O 3
Lee, Moon-Sook, Park, Kun-Sang, Nam, Sang-Don, Lee, Kyu-Mann, Seo, Jung-Suk, Joo, Suk-Ho, Lee, Sang-Woo, Lee, Yong-Tak, An, Hyeong-Geun, Kim, Hyoung-Joon, Cho, Sung-Lae, Son, Yoon-Ho, Kim, Young-Dae, Jung, Yong-Joo, Heo, Jang-Eun, Park, Soon-Oh, Chung, U-In, Moon, Joo-Tae
Published in Japanese Journal of Applied Physics (30.11.2002)
Published in Japanese Journal of Applied Physics (30.11.2002)
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Journal Article
On the Gate Oxide Scaling of Sub-100nm CMOS Transistors
Seungheon Song, Jihye Yi, Woosik Kim, Kazuyuki Fujihara, Ho-Kyu Kang, Joo-Tae Moon, Moon-Yong Lee
Published in Journal of semiconductor technology and science (2001)
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Published in Journal of semiconductor technology and science (2001)
Journal Article