Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric
Laegu Kang, Byoung Hun Lee, Wen-Jie Qi, Yongjoo Jeon, Nieh, R., Gopalan, S., Onishi, K., Lee, J.C.
Published in IEEE electron device letters (01.04.2000)
Published in IEEE electron device letters (01.04.2000)
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Journal Article
Degradation of thin oxides during electrical stress
Bersuker, Gennadi, Jeon, Yongjoo, Huff, Howard R
Published in Microelectronics and reliability (01.12.2001)
Published in Microelectronics and reliability (01.12.2001)
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Journal Article
Ultrathin hafnium oxide with low leakage and excellent reliability for alternative gate dielectric application
Byoung Hun Lee, Laegu Kang, Wen-Jie Qi, Renee Nieh, Yongjoo Jeon, Katsunori Onishi, Lee, J.C.
Published in International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999)
Published in International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) (1999)
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Conference Proceeding
High performance partially depleted SOI using spike RTA
Kang, Grudowski, Veer Dhandapani, Yongjoo Jeon, Goktepeli, Byoung Min, Yeap, Foisy, Anderson, Mendicino, Venkatesan
Published in 2003 IEEE International Conference on SOI (2003)
Published in 2003 IEEE International Conference on SOI (2003)
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Conference Proceeding
Effect of barrier layer on the electrical and reliability characteristics of high-k gate dielectric films
Yongjoo Jeon, Byoung Hun Lee, Zawadzki, K., Wen-Jie Qi, Lucas, A., Nieh, R., Lee, J.C.
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
Published in International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) (1998)
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Conference Proceeding