Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient Stresses
Malobabic, S, Salcedo, J A, Hajjar, J, Liou, J J
Published in IEEE transactions on electron devices (01.10.2010)
Published in IEEE transactions on electron devices (01.10.2010)
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Journal Article
Compact failure modeling for devices subject to electrostatic discharge stresses – A review pertinent to CMOS reliability simulation
Miao, Meng, Zhou, Yuanzhong, Salcedo, Javier A., Hajjar, Jean-Jacques, Liou, Juin J.
Published in Microelectronics and reliability (01.01.2015)
Published in Microelectronics and reliability (01.01.2015)
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Journal Article
Bidirectional Devices for Automotive-Grade Electrostatic Discharge Applications
Salcedo, J. A., Hajjar, J-J, Malobabic, S., Liou, J. J.
Published in IEEE electron device letters (01.06.2012)
Published in IEEE electron device letters (01.06.2012)
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Journal Article
Snapback and Postsnapback Saturation of Pseudomorphic High-Electron Mobility Transistor Subject to Transient Overstress
Qiang Cui, Parthasarathy, Srivatsan, Salcedo, Javier A, Liou, Juin J, Hajjar, Jean J, Yuanzhong Zhou
Published in IEEE electron device letters (01.05.2010)
Published in IEEE electron device letters (01.05.2010)
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Journal Article
NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal Applications
Malobabic, S., Salcedo, J. A., Hajjar, Jean-Jacques, Liou, J. J.
Published in IEEE electron device letters (01.11.2012)
Published in IEEE electron device letters (01.11.2012)
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Journal Article
Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses
Ellis, D F, Yuanzhong Zhou, Salcedo, J A, Hajjar, J, Liou, J J
Published in IEEE transactions on electron devices (01.09.2010)
Published in IEEE transactions on electron devices (01.09.2010)
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Journal Article
Correlation of Human Metal Model and Transmission Line Pulsing Testing
Malobabic, S., Salcedo, J. A., Righter, A. W., Hajjar, J., Liou, J. J.
Published in IEEE electron device letters (01.09.2011)
Published in IEEE electron device letters (01.09.2011)
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Journal Article
TCAD Methodology for Design of SCR Devices for Electrostatic Discharge (ESD) Applications
Salcedo, Javier A., Liou, Juin J., Liu, Zhiwei, Vinson, James E.
Published in IEEE transactions on electron devices (01.04.2007)
Published in IEEE transactions on electron devices (01.04.2007)
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Journal Article
Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications
Cui, Qiang, Parthasarathy, Srivatsan, Salcedo, Javier A., Liou, Juin J., Hajjar, Jean J., (Paul) Zhou, Yuanzhong
Published in Microelectronics and reliability (01.01.2014)
Published in Microelectronics and reliability (01.01.2014)
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Journal Article
Design and integration of novel SCR-based devices for ESD protection in CMOS/BiCMOS technologies
Salcedo, J.A., Liou, J.J., Bernier, J.C.
Published in IEEE transactions on electron devices (01.12.2005)
Published in IEEE transactions on electron devices (01.12.2005)
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Journal Article
On-chip electrostatic discharge protection for CMOS gas sensor systems-on-a-chip (SoC)
Salcedo, Javier A., Liou, Juin J., Afridi, Muhammad Y., Hefner, Allen R.
Published in Microelectronics and reliability (01.08.2006)
Published in Microelectronics and reliability (01.08.2006)
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Journal Article