Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture
Leurquin, C., Vandendaele, W., Jaud, M.-A., Lavieville, R., Mohamad, B., Masante, C., Despesse, G., Nowak, E.
Published in IEEE transactions on electron devices (01.05.2024)
Published in IEEE transactions on electron devices (01.05.2024)
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Parasitic Capacitance Analytical Model for Sub-7-nm Multigate Devices
Lacord, J., Martinie, S., Rozeau, O., Jaud, M.-A, Barraud, S., Barbe, J. C.
Published in IEEE transactions on electron devices (01.02.2016)
Published in IEEE transactions on electron devices (01.02.2016)
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Influence of Carbon on pBTI Degradation in GaN-on-Si E-Mode MOSc-HEMT
Viey, A. G., Vandendaele, W., Jaud, M.-A., Gerrer, L., Garros, X., Cluzel, J., Martin, S., Krakovinsky, A., Biscarrat, J., Gwoziecki, R., Plissonnier, M., Gaillard, F., Modica, R., Iucolano, F., Meneghini, M., Meneghesso, G., Ghibaudo, G.
Published in IEEE transactions on electron devices (01.04.2021)
Published in IEEE transactions on electron devices (01.04.2021)
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Reconfigurable field effect transistor for advanced CMOS: Advantages and limitations
Navarro, C., Barraud, S., Martinie, S., Lacord, J., Jaud, M.-A., Vinet, M.
Published in Solid-state electronics (01.02.2017)
Published in Solid-state electronics (01.02.2017)
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Influence of AlGaN n-type doping and AlN thickness on the two-dimensional electron gas density (ns) and resistance (R2DEG)
Piotrowicz, C., Mohamad, B., Malbert, N., Jaud, M.-A., Vandendaele, W., Charles, M., Gwoziecki, R.
Published in Solid-state electronics (01.03.2023)
Published in Solid-state electronics (01.03.2023)
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Comprehensive TCAD Analysis of Threshold Voltage on GaN-on-Si MOS-Channel Fully Recessed Gate HEMTs
Jaud, M. -A., Vandendaele, W., Rrustemi, B., Viey, A. G., Martin, S., Le Royer, C., Vauche, L., Martinie, S., Gwoziecki, R., Modica, R., Iucolano, F., Poiroux, T.
Published in IEEE transactions on electron devices (01.02.2022)
Published in IEEE transactions on electron devices (01.02.2022)
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Journal Article
Impact of Gate Morphology on Electrical Performances of Recessed GaN-on Si MOS channel-HEMT for Different Channel Orientations
Piotrowic, C., Mohamad, B., Rocha, P. Fernandes Paes Pinto, Malbert, N., Ruel, S., Pimenta-Barros, P., Jaud, M.-A., Vauche, L., Royer, C. Le
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
Published in 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) (28.05.2023)
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Conference Proceeding
In depth TCAD analysis of threshold voltage on GaN-on-Si MOS-channel fully recessed gate HEMTs
Jaud, M. -A., Vandendaele, W., Rrustemi, B., Viey, A. G., Martin, S., Le Royer, C., Vauche, L., Martinie, S., Morvan, E., Gwoziecki, R., Modica, R., Iucolano, F., Plissonnier, M., Poiroux, T.
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
Published in 2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) (30.05.2021)
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Conference Proceeding
Extra-low parasitic gate-to-contacts capacitance architecture for sub-14 nm transistor nodes
NIEBOJEWSKI, H, LE ROYER, C, MORAND, Y, ROZEAU, O, JAUD, M.-A, DUBOIS, E, POIROUX, T, BENSAHEL, D
Published in Solid-state electronics (01.07.2014)
Published in Solid-state electronics (01.07.2014)
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In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation
Grandchamp, B., Jaud, M.-A., Scheiblin, P., Romanjek, K., Hutin, L., Le Royer, C., Vinet, M.
Published in Solid-state electronics (01.03.2011)
Published in Solid-state electronics (01.03.2011)
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Journal Article
Study on the difference between ID(VG) and C(VG) pBTI shifts in GaN-on-Si E-mode MOSc-HEMT
Viey, A.G., Vandendaele, W., Jaud, M.-A., Coignus, J., Cluzel, J., Krakovinsky, A., Martin, S., Biscarrat, J., Gwoziecki, R., Sousa, V., Gaillard, F., Modica, R., Iucolano, F., Meneghini, M., Meneghesso, G., Ghibaudo, G.
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
Published in 2021 IEEE International Reliability Physics Symposium (IRPS) (01.03.2021)
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Conference Proceeding
Fast evaluation of continuous-RX impact on performance for strained FDSOI
Lacord, J., Jaud, M-A, Poiroux, T., Barbe, J-C
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
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Conference Proceeding
High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate
Romanjek, K., Hutin, L., Le Royer, C., Pouydebasque, A., Jaud, M.-A., Tabone, C., Augendre, E., Sanchez, L., Hartmann, J.-M., Grampeix, H., Mazzocchi, V., Soliveres, S., Truche, R., Clavelier, L., Scheiblin, P., Garros, X., Reimbold, G., Vinet, M., Boulanger, F., Deleonibus, S.
Published in Solid-state electronics (01.07.2009)
Published in Solid-state electronics (01.07.2009)
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Conference Proceeding
TCAD for gate stack optimization in pGaN Gate HEMT devices
Jaud, M.-A, Baines, Y., Charles, M., Morvan, E., Scheiblin, P., Torres, A., Plissonnier, M., Barbe, J.-C
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
Published in 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2017)
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Conference Proceeding
(Invited) Evaluation of Stacked Nanowires Transistors for CMOS: Performance and Technology Opportunities
Gaben, Loïc, Barraud, Sylvain, Samson, Marie-Pierre, Jaud, Marie-Anne, Martinie, Sébastien, Rozeau, Olivier, Lacord, Joris, Arvet, Christian, Vizioz, Christian, Bustos, Jessy, Dallery, Jacques-Alexandre, Pauliac, Sébastien, Balan, Viorel, Euvrard-Colnat, Catherine, Perrot, Cédric, Loup, Virginie, Besson, Pascal, Hartmann, Jean-Michel, Monfray, Stéphane, Boeuf, Frédéric, Skotnicki, Thomas, Balestra, Francis, Vinet, Maud
Published in ECS transactions (04.05.2016)
Published in ECS transactions (04.05.2016)
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Effect of doping on Al2O3/GaN MOS capacitance
Rrustemi, B., Piotrowicz, C., Jaud, M-A., Triozon, F., Vandendaele, W., Mohamad, B., Gwoziecki, R., Ghibaudo, G.
Published in Solid-state electronics (01.08.2022)
Published in Solid-state electronics (01.08.2022)
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TCAD modeling challenges for 14nm FullyDepleted SOI technology performance assessment
Tavernier, C., Pereira, F. G., Nier, O., Rideau, D., Monsieur, F., Torrente, G., Haond, M., Jaouen, H., Noblanc, O., Niquet, Y. M., Jaud, M.-A, Triozon, F., Casse, M., Lacord, J., Barbe, J. C.
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
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Conference Proceeding
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Performance and design considerations for gate-all-around stacked-NanoWires FETs
Barraud, S., Lapras, V., Previtali, B., Samson, M. P., Lacord, J., Martinie, S., Jaud, M.-A, Athanasiou, S., Triozon, F., Rozeau, O., Hartmann, J. M., Vizioz, C., Comboroure, C., Andrieu, F., Barbe, J. C., Vinet, M., Ernst, T.
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
Published in 2017 IEEE International Electron Devices Meeting (IEDM) (01.12.2017)
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Conference Proceeding
A physics-based compact model for Fully-Depleted Tunnel Field Effect Transistor
Martinie, S., Rozeau, O., Le Royer, C., Lacord, J., Jaud, M.-A, Poiroux, T., Le Carval, G., Barbe, J.-C
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
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Conference Proceeding
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Mechanical simulation of stress engineering solutions in highly strained p-type FDSOI MOSFETs for 14-nm node and beyond
Oudrhiri, A. Idrissi-El, Martinie, S., Barbe, J.-C, Rozeau, O., Le Royer, C., Jaud, M.-A, Lacord, J., Bernier, N., Grenouillet, L., Rivallin, P., Pelloux-Prayer, J., Casse, M., Mouis, M.
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
Published in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) (01.09.2015)
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