Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100 nm metal-oxide-semiconductor transistors
LAU, W. S, PEIZHEN YANG, JASON ZHIWEI CHIAN, HU, V, LOH, C. H, SIAH, S. Y, CHAN, L
Published in Microelectronics and reliability (2009)
Published in Microelectronics and reliability (2009)
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Journal Article
Drain current saturation at high drain voltage due to pinch off instead of velocity saturation in sub-100nm metal–oxide–semiconductor transistors
Lau, W.S., Yang, Peizhen, Chian, Jason Zhiwei, Ho, V., Loh, C.H., Siah, S.Y., Chan, L.
Published in Microelectronics and reliability (01.01.2009)
Published in Microelectronics and reliability (01.01.2009)
Get full text
Journal Article