A Case of Minoxidil Induced Pericardial Effusion
Lee, Bong Seob, Lee, Sun Koo, Jang, Jae Hyung, Choi, Yong Woo, Park, Sang Bae, Moon, Yong, Kim, Chong Jun, Kim, Mun Jung
Published in Korean Circulation Journal (1986)
Published in Korean Circulation Journal (1986)
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Journal Article
Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of In@@d0.52@Al@@d0.48@As/In@@d0.53@Ga@@d0.47@As p-HEMTs
Kim, Tae-Woo, Kim, Dae-Hyun, Duk, Sang Park, Young, Geun Yeom, Ok, Byeong Lim, Rhee, Jin-Koo, Jang, Jae-Hyung, Song, Jong-In
Published in IEEE electron device letters (01.12.2007)
Published in IEEE electron device letters (01.12.2007)
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Journal Article
A Two-Step-Recess Process Based on Atomic-Layer Etching for High-Performance In0.52Al0.48As/In0.53Ga0.47As p-HEMTs
KIM, Tae-Woo, KIM, Dae-Hyun, JANG, Jae-Hyung, SONG, Jong-In, PARK, Sang-Duk, SEUNG HEON SHIN, SEONG JUNE JO, SONG, Ho-Jin, YOUNG MIN PARK, BAE, Jeoun-Oun, KIM, Young-Woon, YEOM, Geun-Young
Published in IEEE transactions on electron devices (2008)
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Published in IEEE transactions on electron devices (2008)
Journal Article
Quaternary In0.05Al0.70Ga0.25N/GaN HEMTs With On-Resistance of 0.97\ \Omega\cdot \text
Hwang, Ji Hyun, Jang, Mi, Park, Juyeong, Jang, Jae-Hyung
Published in 2019 Compound Semiconductor Week (CSW) (01.05.2019)
Published in 2019 Compound Semiconductor Week (CSW) (01.05.2019)
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Conference Proceeding
Effect of a Two-Step Recess Process Using Atomic Layer Etching on the Performance of In sub(0.52)Al sub(0.48)As/In sub( 0.53)Ga sub(0.47)As p-HEMTs
Kim, Tae-Woo, Kim, Dae-Hyun, Duk, Sang Park, Young, Geun Yeom, Ok, Byeong Lim, Rhee, Jin-Koo, Jang, Jae-Hyung, Song, Jong-In
Published in IEEE electron device letters (01.01.2007)
Published in IEEE electron device letters (01.01.2007)
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Journal Article
TOUCH DISPLAY DEVICE
WON, Sang-Hyuk, PARK, Sang-Hoon, KIM, Min-Joo, LEE, Jae-Won, JANG, Jae-Hyung
Year of Publication 17.07.2024
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Year of Publication 17.07.2024
Patent
Effect of a two-step recess process using atomic layer etching on the performance of In0.52Al0.48As/In0.53Ga0.47As p-HEMTs
KIM, Tae-Woo, KIM, Dae-Hyun, SANG DUK PARK, GEUN YOUNG YEOM, BYEONG OK LIM, RHEE, Jin-Koo, JANG, Jae-Hyung, SONG, Jong-In
Published in IEEE electron device letters (01.12.2007)
Published in IEEE electron device letters (01.12.2007)
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Journal Article