FinFET Versus Gate-All-Around Nanowire FET: Performance, Scaling, and Variability
Nagy, Daniel, Indalecio, Guillermo, Garcia-Loureiro, Antonio J., Elmessary, Muhammad A., Kalna, Karol, Seoane, Natalia
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Comparison of Fin-Edge Roughness and Metal Grain Work Function Variability in InGaAs and Si FinFETs
Seoane, Natalia, Indalecio, Guillermo, Aldegunde, Manuel, Nagy, Daniel, Elmessary, Muhammad A., Garcia-Loureiro, Antonio J., Kalna, Karol
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article
Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Lindberg, Jari, Dettmer, Wulf G., Peric, Djordje, Garcia-Loureiro, Antonio J., Kalna, Karol
Published in IEEE transactions on electron devices (01.03.2016)
Published in IEEE transactions on electron devices (01.03.2016)
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Journal Article
Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs
Kalna, K., Seoane, N., Garcia-Loureiro, A.J., Thayne, I.G., Asenov, A.
Published in IEEE transactions on electron devices (01.09.2008)
Published in IEEE transactions on electron devices (01.09.2008)
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Journal Article
Scaling/LER study of Si GAA nanowire FET using 3D finite element Monte Carlo simulations
Elmessary, Muhammad A., Nagy, Daniel, Aldegunde, Manuel, Seoane, Natalia, Indalecio, Guillermo, Lindberg, Jari, Dettmer, Wulf, Perić, Djordje, García-Loureiro, Antonio J., Kalna, Karol
Published in Solid-state electronics (01.02.2017)
Published in Solid-state electronics (01.02.2017)
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Journal Article
Physics-based model for tunnel heterostructure bipolar transistors
López-González, Juan M, García-Loureiro, Antonio J
Published in Semiconductor science and technology (01.11.2004)
Published in Semiconductor science and technology (01.11.2004)
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Journal Article
A model for abrupt double heterojunction bipolar transistors
J. García-Loureiro, Antonio, M. López-González, Juan
Published in International journal of numerical modelling (01.01.2004)
Published in International journal of numerical modelling (01.01.2004)
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Journal Article