Carrier-gas dependence of ELO GaN grown by hydride VPE
Miyake, H., Bohyama, S., Fukui, M., Hiramatsu, K., Iyechika, Y., Maeda, T.
Published in Journal of crystal growth (01.04.2002)
Published in Journal of crystal growth (01.04.2002)
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GaN layer structures with buried tungsten nitrides (WN x) using epitaxial lateral overgrowth via MOVPE
Hiramatsu, K, Haino, M, Yamaguchi, M, Miyake, H, Motogaito, A, Sawaki, N, Iyechika, Y, Maeda, T
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Published in Materials science & engineering. B, Solid-state materials for advanced technology (22.05.2001)
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Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
Hiramatsu, Kazumasa, Nishiyama, Katsuya, Onishi, Masaru, Mizutani, Hiromitsu, Narukawa, Mitsuhisa, Motogaito, Atsushi, Miyake, Hideto, Iyechika, Yasushi, Maeda, Takayoshi
Published in Journal of crystal growth (01.12.2000)
Published in Journal of crystal growth (01.12.2000)
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Conference Proceeding
Linear and nonlinear optical properties of thin evaporated and epitaxial II–VI compound films
Becker, U., Mu¨ller, M., Witt, A., Gru¨n, M., Pier, Th, Schmidt, A., Klingshirn, C., Hingeri, K., Sitter, H., Heinrich, H., Wingen, G., Iyechika, Y., Ja¨ger, D.
Published in Thin solid films (01.08.1989)
Published in Thin solid films (01.08.1989)
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An electrooptic and optoelectric bistable interconnect at 514 nm: the photothermal CdS self-electrooptic effect devices
Witt, A., Wegener, M., Lyssenko, V.G., Klingshirn, C., Wingen, G., Iyechika, Y., Jager, D., Muller-Vogt, G., Sitter, H., Heinrich, H., MacKenzie, H.A.
Published in IEEE journal of quantum electronics (01.12.1988)
Published in IEEE journal of quantum electronics (01.12.1988)
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Transmission Electron Microscopy Investigation of Dislocations in GaN Layer Grown by Facet-Controlled Epitaxial Lateral Overgrowth
Honda, Yoshiaki, Iyechika, Yasushi, Maeda, Takayoshi, Miyake, Hideto, Hiramatsu, Kazumasa
Published in Japanese Journal of Applied Physics (01.04.2001)
Published in Japanese Journal of Applied Physics (01.04.2001)
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Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
Hiroki Sone, Hiroki Sone, Shingo Nambu, Shingo Nambu, Yasutoshi Kawaguchi, Yasutoshi Kawaguchi, Masahito Yamaguchi, Masahito Yamaguchi, Hideto Miyake, Hideto Miyake, Kazumasa Hiramatsu, Kazumasa Hiramatsu, Yasushi Iyechika, Yasushi Iyechika, Takayoshi Maeda, Takayoshi Maeda, Nobuhiko Sawaki, Nobuhiko Sawaki
Published in Japanese Journal of Applied Physics (01.04.1999)
Published in Japanese Journal of Applied Physics (01.04.1999)
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Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H 2 and N 2
Bohyama, Shinya, Yoshikawa, Kenji, Naoi, Hiroyuki, Miyake, Hideto, Hiramatsu, Kazumasa, Iyechika, Yasushi, Maeda, Takayosi
Published in Japanese Journal of Applied Physics (15.01.2002)
Published in Japanese Journal of Applied Physics (15.01.2002)
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DISTRIBUTION OF THREADING DISLOCATIONS IN EPITAXIAL LATERAL OVERGROWTH GaN BY HYDRIDE VAPOR-PHASE EPITAXY USING MIXED CARRIER GAS OF H2 AND N2
Bohyama, S, Yoshikawa, K, Naoi, H, Miyake, H, Hiramatsu, K, Iyechika, Y
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 75-76. 2002 (01.01.2002)
Published in Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 75-76. 2002 (01.01.2002)
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Reduction of etch pit density on GaN by InGaN-strained SQW
Ono, Yoshinobu, Iyechika, Yasushi, Takada, Tomoyuki, Inui, Katsumi, Matsue, Teruyuki
Published in Journal of crystal growth (01.06.1998)
Published in Journal of crystal growth (01.06.1998)
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CRYSTAL ORIENTATION FLUCTUATION OF EPITAXIAL-LATERAL-OVERGROWN GaN WITH W MASK AND SiO2 MASK OBSERVED BY TRANSMISSION ELECTRON DIFFRACTION AND X-RAY ROCKING CURVES
Honda, Y, Iyechika, Y, Maeda, T, Miyake, H, Hiramatsu, K, Sone, H
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 38, no. 11B, pp. L1299-L1302. 1999 (15.11.1999)
Published in Jpn.J.Appl.Phys ,Part 2. Vol. 38, no. 11B, pp. L1299-L1302. 1999 (15.11.1999)
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Buried Tungsten Metal Structure Fabricated by Epitaxial-Lateral-Overgrown GaN via Low-Pressure Metalorganic Vapor Phase Epitaxy
Haino, Masahiro, Yamaguchi, Motoo, Miyake, Hideto, Motogaito, Atsushi, Hiramatsu, Kazumasa, Kawaguchi, Yasutoshi, Sawaki, Nobuhiko, Iyechika, Yasushi, Maeda, Takayoshi
Published in Japanese Journal of Applied Physics (2000)
Published in Japanese Journal of Applied Physics (2000)
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Carrier-gas dependence of ELO GaN grown by hydride VPE
MIYAKE, H, BOHYAMA, S, FUKUI, M, HIRAMATSU, K, IYECHIKA, Y, MAEDA, T
Published in Journal of crystal growth (2002)
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Published in Journal of crystal growth (2002)
Conference Proceeding
Periodic density functional studies on Mg(H)x-doped GaN semiconductor
Stirling, Andras, Tsujimichi, Kazuya, Kanougi, Tomonori, Endou, Akira, Miura, Ryuji, Kubo, Momoji, Miyamoto, Akira, Iyechika, Yasushi, Maeda, Takayoshi
Published in Applied surface science (01.09.1997)
Published in Applied surface science (01.09.1997)
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