Search Results - "Iwayama, Sho" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire

by Sato, Kosuke, Yasue, Shinji, Yamada, Kazuki, Tanaka, Shunya, Omori, Tomoya, Ishizuka, Sayaka, Teramura, Shohei, Ogino, Yuya, Iwayama, Sho, Miyake, Hideto, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Applied physics express (01.03.2020)

Get full text

Journal Article

Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy

Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy

by Akatsuka, Yasuto, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Applied physics express (01.02.2019)

Get full text

Journal Article

Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers

Ultraviolet-B band lasers fabricated on highly relaxed thick Al0.55Ga0.45N films grown on various types of AlN wafers

by Kawase, Yuta, Ikeda, Syunya, Sakuragi, Yusuke, Yasue, Shinji, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto
Published in Japanese Journal of Applied Physics (01.06.2019)

Get full text

Journal Article

Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

Reduction of dislocation density in Al0.6Ga0.4N film grown on sapphire substrates using annealed sputtered AlN templates and its effect on UV-B laser diodes

by Shimokawa, Moe, Teramura, Shohei, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Ogino, Yuya, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto
Published in Journal of crystal growth (01.12.2021)

Get full text

Journal Article

Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN

Centimeter-scale laser lift-off of an AlGaN UVB laser diode structure grown on nano-patterned AlN

by Shojiki, Kanako, Shimokawa, Moe, Iwayama, Sho, Omori, Tomoya, Teramura, Shohei, Yamaguchi, Akihiro, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto
Published in Applied physics express (01.05.2022)

Get full text

Journal Article

Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing

Growth of High‐Quality AlN and AlGaN Films on Sputtered AlN/Sapphire Templates via High‐Temperature Annealing

by Hakamata, Junya, Kawase, Yuta, Dong, Lin, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Akasaki, Isamu
Published in physica status solidi (b) (01.05.2018)

Get full text

Journal Article

In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps

In-situ curvature measurements of AlInN/GaN distributed Bragg reflectors during growths containing substrate temperature ramping steps

by Hiraiwa, Kei, Muranaga, Wataru, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Journal of crystal growth (01.02.2020)

Get full text

Journal Article

Recent development of UV-B laser diodes

Recent development of UV-B laser diodes

by Iwaya, Motoaki, Tanaka, Shunya, Omori, Tomoya, Yamada, Kazuki, Hasegawa, Ryota, Shimokawa, Moe, Yabutani, Ayumu, Iwayama, Sho, Sato, Kosuke, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto
Published in Japanese Journal of Applied Physics (01.04.2022)

Get full text

Journal Article

Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods

Performance of Ultraviolet‐B Laser Diodes on AlGaN Templates Prepared Using Different Fabrication Methods

by Matsubara, Eri, Omori, Tomoya, Hasegawa, Ryota, Yamada, Kazuki, Yabutani, Ayumu, Kondo, Ryosuke, Nishibayashi, Toma, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Miyake, Hideto, Iwaya, Motoaki
Published in Physica status solidi. A, Applications and materials science (01.08.2023)

Get full text

Journal Article

Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm−2) using a laser liftoff method

Fabrication of vertical AlGaN-based deep-ultraviolet light-emitting diodes operating at high current density (∼43 kA cm−2) using a laser liftoff method

by Shimokawa, Moe, Yamada, Yuya, Omori, Tomoya, Yamada, Kazuki, Hasegawa, Ryota, Nishibayashi, Toma, Yabutani, Ayumu, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Miyake, Hideto, Miyoshi, Kohei, Naniwae, Koichi, Yamaguchi, Akihiro
Published in Applied physics express (01.04.2022)

Get full text

Journal Article

$The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution$

The dependence of AlN molar fraction of AlGaN in wet etching by using tetramethylammonium hydroxide aqueous solution

by Yasue, Shinji, Sato, Kosuke, Kawase, Yuta, Ikeda, Junya, Sakuragi, Yusuke, Iwayama, Sho, Iwaya, Motoaki, Kamiyama, Satoshi, Takeuchi, Tetsuya, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.06.2019)

Get full text

Journal Article

Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers

Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers

by Tanaka, Shunya, Kawase, Yuta, Teramura, Shohei, Iwayama, Sho, Sato, Kosuke, Yasue, Shinji, Omori, Tomoya, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Miyake, Hideto
Published in Applied physics express (01.04.2020)

Get full text

Journal Article

A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water

A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water

by Matsubara, Eri, Hasegawa, Ryota, Nishibayashi, Toma, Yabutani, Ayumu, Yamada, Ryoya, Imoto, Yoshinori, Kondo, Ryosuke, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Shojiki, Kanako, Kumagai, Shinya, Miyake, Hideto, Iwaya, Motoaki
Published in Applied physics express (01.11.2022)

Get full text

Journal Article

Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer

Demonstration of electron beam laser excitation in the UV range using a GaN/AlGaN multiquantum well active layer

by Hayashi, Takafumi, Kawase, Yuta, Nagata, Noriaki, Senga, Takashi, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Matsumoto, Takahiro
Published in Scientific reports (07.06.2017)

Get full text

Journal Article

Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length

Analysis of carrier injection efficiency of AlGaN UV-B laser diodes based on the relationship between threshold current density and cavity length

by Sato, Kosuke, Omori, Tomoya, Yamada, Kazuki, Tanaka, Shunya, Ishizuka, Sayaka, Teramura, Shohei, Iwayama, Sho, Iwaya, Motoaki, Miyake, Hideto, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Published in Japanese Journal of Applied Physics (01.07.2021)

Get full text

Journal Article

High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

High-quality AlInN/GaN distributed Bragg reflectors grown by metalorganic vapor phase epitaxy

by Akagi, Takanobu, Kozuka, Yugo, Ikeyama, Kazuki, Iwayama, Sho, Kuramoto, Masaru, Saito, Tatsuma, Tanaka, Takayuki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Applied physics express (01.12.2020)

Get full text

Journal Article

In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors

In situ wafer curvature measurement and strain control of AlInN/GaN distributed Bragg reflectors

by Hiraiwa, Kei, Muranaga, Wataru, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Iwaya, Motoaki, Akasaki, Isamu
Published in Applied physics express (01.05.2020)

Get full text

Journal Article

Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer

Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer

by Hayashi, Takafumi, Nagata, Noriaki, Senga, Takashi, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Matsumoto, Takahiro
Published in Applied physics express (01.10.2016)

Get full text

Journal Article

Retraction: "Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer

Retraction: "Demonstration of electron beam excitation laser using a GaInN-based multiquantum well active layer

by Hayashi, Takafumi, Nagata, Noriaki, Senga, Takashi, Iwayama, Sho, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Matsumoto, Takahiro
Published in Applied physics express (04.11.2016)

Get full text

Journal Article

Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters

Handheld deep ultraviolet emission device based on aluminum nitride quantum wells and graphene nanoneedle field emitters

by Matsumoto, Takahiro, Iwayama, Sho, Saito, Takao, Kawakami, Yasuyuki, Kubo, Fumio, Amano, Hiroshi
Published in Optics express (22.10.2012)

Get full text

Journal Article