1.8 V Power Supply 16 Mb-MRAMs With 42.3% Array Efficiency
Yoda, H., Kai, T., Inaba, T., Iwata, Y., Shimomura, N., Ikegawa, S., Tsuchida, K., Asao, Y., Kishi, T., Ueda, T., Takahashi, S., Nagamine, M., Kajiyama, T., Yoshikawa, M., Amano, M., Nagase, T., Hosotani, K., Nakayama, M., Shimizu, Y., Aikawa, H., Nishiyama, K., Kitagawa, E., Takizawa, R., Ueda, Y., Iwayama, M., Itagaki, K.
Published in IEEE transactions on magnetics (01.10.2006)
Published in IEEE transactions on magnetics (01.10.2006)
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Journal Article
Conference Proceeding
SEMICONDUCTOR MEMORY DEVICE
MOMODOMI, MASAKI, KIRISAWA, RYOUHEI, NAKAMURA, HIROSHI, IWATA, YOSHIHISA
Year of Publication 15.06.1999
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Year of Publication 15.06.1999
Patent
A SEMICONDUCTOR MEMORY DEVICE
NAKAMURA, HIROSHI, IMAMIYA, KENITI, MIYAMOTO, JUNICHI, IWATA, YOSHIHISA
Year of Publication 01.02.1999
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Year of Publication 01.02.1999
Patent