Thermal management strategies for gallium oxide vertical trench-fin MOSFETs
Montgomery, Robert H., Zhang, Yuewei, Yuan, Chao, Kim, Samuel, Shi, Jingjing, Itoh, Takeki, Mauze, Akhil, Kumar, Satish, Speck, James, Graham, Samuel
Published in Journal of applied physics (28.02.2021)
Published in Journal of applied physics (28.02.2021)
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Journal Article
Modeling and analysis for thermal management in gallium oxide field-effect transistors
Yuan, Chao, Zhang, Yuewei, Montgomery, Robert, Kim, Samuel, Shi, Jingjing, Mauze, Akhil, Itoh, Takeki, Speck, James S., Graham, Samuel
Published in Journal of applied physics (21.04.2020)
Published in Journal of applied physics (21.04.2020)
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Journal Article
Coherently strained (001) β-(AlxGa1−x)2O3 thin films on β-Ga2O3: Growth and compositional analysis
Mauze, Akhil, Itoh, Takeki, Zhang, Yuewei, Deagueros, Evelyn, Wu, Feng, Speck, James S.
Published in Journal of applied physics (21.09.2022)
Published in Journal of applied physics (21.09.2022)
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Journal Article
Low temperature electron mobility exceeding 104 cm2/V s in MOCVD grown β-Ga2O3
Alema, Fikadu, Zhang, Yuewei, Osinsky, Andrei, Valente, Nicholas, Mauze, Akhil, Itoh, Takeki, Speck, James S.
Published in APL materials (01.12.2019)
Published in APL materials (01.12.2019)
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Journal Article
H2O vapor assisted growth of β-Ga2O3 by MOCVD
Alema, Fikadu, Zhang, Yuewei, Mauze, Akhil, Itoh, Takeki, Speck, James S., Hertog, Brian, Osinsky, Andrei
Published in AIP advances (01.08.2020)
Published in AIP advances (01.08.2020)
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Journal Article
Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes
Farzana, Esmat, Bhattacharyya, Arkka, Hendricks, Nolan S., Itoh, Takeki, Krishnamoorthy, Sriram, Speck, James S.
Published in APL materials (01.11.2022)
Published in APL materials (01.11.2022)
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Journal Article
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
Bhattacharyya, Arkka, Peterson, Carl, Itoh, Takeki, Roy, Saurav, Cooke, Jacqueline, Rebollo, Steve, Ranga, Praneeth, Sensale-Rodriguez, Berardi, Krishnamoorthy, Sriram
Published in APL materials (01.02.2023)
Published in APL materials (01.02.2023)
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Journal Article
Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
Itoh, Takeki, Kobayashi, Atsushi, Ueno, Kohei, Ohta, Jitsuo, Fujioka, Hiroshi
Published in Scientific reports (07.07.2016)
Published in Scientific reports (07.07.2016)
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Journal Article
Surface reaction dependence of molecular beam epitaxy grown aluminum on various orientations of β-Ga2O3
Huynh, Kenny, Liao, Michael E., Mauze, Akhil, Itoh, Takeki, Yan, Xingxu, Speck, James S., Pan, Xiaoqing, Goorsky, Mark S.
Published in APL materials (01.01.2022)
Published in APL materials (01.01.2022)
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Journal Article
Highly conductive epitaxial β-Ga2O3 and β-(Al x Ga1−x )2O3 films by MOCVD
Alema, Fikadu, Itoh, Takeki, Vogt, Samuel, Speck, James S., Osinsky, Andrei
Published in Japanese Journal of Applied Physics (01.10.2022)
Published in Japanese Journal of Applied Physics (01.10.2022)
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Journal Article
Highly conductive epitaxial β-Ga 2 O 3 and β-(Al x Ga 1−x ) 2 O 3 films by MOCVD
Alema, Fikadu, Itoh, Takeki, Vogt, Samuel, Speck, James S., Osinsky, Andrei
Published in Japanese Journal of Applied Physics (01.10.2022)
Published in Japanese Journal of Applied Physics (01.10.2022)
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Journal Article
Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy
Farzana, Esmat, Wang, Jianfeng, Monavarian, Morteza, Itoh, Takeki, Qwah, Kai Shek, Biegler, Zachary J., Jorgensen, Kelsey F., Speck, James S.
Published in IEEE electron device letters (01.12.2020)
Published in IEEE electron device letters (01.12.2020)
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Journal Article
β-Ga 2 O 3 lateral transistors with high aspect ratio fin-shape channels
Zhang, Yuewei, Mauze, Akhil, Alema, Fikadu, Osinsky, Andrei, Itoh, Takeki, Speck, James S.
Published in Japanese Journal of Applied Physics (01.01.2021)
Published in Japanese Journal of Applied Physics (01.01.2021)
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Journal Article
Enhancing the electron mobility in Si-doped (010) β-Ga 2 O 3 films with low-temperature buffer layers
Bhattacharyya, Arkka, Peterson, Carl, Itoh, Takeki, Roy, Saurav, Cooke, Jacqueline, Rebollo, Steve, Ranga, Praneeth, Sensale-Rodriguez, Berardi, Krishnamoorthy, Sriram
Published in APL materials (01.02.2023)
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Published in APL materials (01.02.2023)
Journal Article
β-Ga2O3 lateral transistors with high aspect ratio fin-shape channels
Zhang, Yuewei, Mauze, Akhil, Alema, Fikadu, Osinsky, Andrei, Itoh, Takeki, Speck, James S.
Published in Japanese Journal of Applied Physics (01.01.2021)
Published in Japanese Journal of Applied Physics (01.01.2021)
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Journal Article
(Invited) Gallium Nitride for Vertical Power Devices: Improving Morphology and Unintentional Impurities for Better Devices
Speck, James S., Farzana, Esmat, Qwah, Kai Shek, Biegler, Zachary J., Wissel-Garcia, Ashley, Celupica-Liu, Iris, Itoh, Takeki
Published in Meeting abstracts (Electrochemical Society) (22.12.2023)
Published in Meeting abstracts (Electrochemical Society) (22.12.2023)
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Journal Article
(Invited) Vertical GaN Devices for High-Power Electronics
Farzana, Esmat, Wang, Jianfeng, Jorgensen, Kelsey Fast, Qwah, Kai Shek, Monavarian, Morteza, Itoh, Takeki, Biegler, Zachary J., Speck, James S.
Published in Meeting abstracts (Electrochemical Society) (19.10.2021)
Published in Meeting abstracts (Electrochemical Society) (19.10.2021)
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