Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate
Ando, Yuji, Ishikura, Kohji, Murase, Yasuhiro, Asano, Kazunori, Takenaka, Isao, Takahashi, Shinnosuke, Takahashi, Hidemasa, Sasaoka, Chiaki
Published in IEEE transactions on electron devices (01.12.2013)
Published in IEEE transactions on electron devices (01.12.2013)
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Journal Article
High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics
Takenaka, Isao, Ishikura, Kohji, Asano, Kazunori, Takahashi, Shinnosuke, Murase, Yasuhiro, Ando, Yuji, Takahashi, Hidemasa, Sasaoka, Chiaki
Published in IEEE transactions on microwave theory and techniques (01.03.2014)
Published in IEEE transactions on microwave theory and techniques (01.03.2014)
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Journal Article
Electron Transport Mechanism for Ohmic Contact to GaN/AlGaN/GaN Heterostructure Field-Effect Transistors
Ando, Yuji, Ishikura, Kohji, Murase, Yasuhiro, Asano, Kazunori, Takenaka, Isao, Takahashi, Shinnosuke, Takahashi, Hidemasa, Sasaoka, Chiaki
Published in IEEE transactions on electron devices (01.09.2013)
Published in IEEE transactions on electron devices (01.09.2013)
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Journal Article
Improvement of Intermodulation Distortion Asymmetry Characteristics With Wideband Microwave Signals in High Power Amplifiers
Takenaka, I., Ishikura, K., Takahashi, H., Hasegawa, K., Asano, K., Iwata, N.
Published in IEEE transactions on microwave theory and techniques (01.06.2008)
Published in IEEE transactions on microwave theory and techniques (01.06.2008)
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Journal Article
Low Distortion CATV Power Amplifier Using GaAs HJFET and GaN FET Cascode Distortion Cancellation Technique
Takenaka, Isao, Ishikura, Kohji, Takahashi, Shinnosuke, Asano, Kazunori, Takahashi, Hidemasa, Murase, Yasuhiro, Ando, Yuji, Ueki, Takekatsu, Nakai, Kazuhito, Yamaguchi, Yuu, Kakuta, Yuji
Published in 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2013)
Published in 2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) (01.10.2013)
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Conference Proceeding
A Distortion-Cancelled Doherty High-Power Amplifier Using 28-V GaAs Heterojunction FETs for W-CDMA Base Stations
Takenaka, I., Ishikura, K., Takahashi, H., Hasegawa, K., Ueda, T., Kurihara, T., Asano, K., Iwata, N.
Published in IEEE transactions on microwave theory and techniques (01.12.2006)
Published in IEEE transactions on microwave theory and techniques (01.12.2006)
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Journal Article
Conference Proceeding