Three Dimensional Stress Mapping of Silicon Surrounded by Copper Filled through Silicon Vias Using Polychromator-Based Multi-Wavelength Micro Raman Spectroscopy
Trigg, Alastair David, Yu, Li Hong, Cheng, Cheng Kuo, Kumar, Rakesh, Kwong, Dim Lee, Ueda, Takeshi, Ishigaki, Toshikazu, Kang, Kitaek, Yoo, Woo Sik
Published in Applied physics express (01.08.2010)
Published in Applied physics express (01.08.2010)
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Journal Article
Raman Characterization of Poly-Si Channel Materials for 3D Flash Memory Device Applications
Yoo, Woo Sik, Ishigaki, Toshikazu, Ueda, Takeshi, Kang, Kitaek, Sheen, Dong Sun, Kim, Sung Soon, Ko, Min Sung, Shin, Wan Sup, Kwak, Noh Yeal, Lee, Byung Seok
Published in ECS transactions (26.03.2014)
Published in ECS transactions (26.03.2014)
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Journal Article
In-line Si1-xGex epitaxial process monitoring and diagnostics using multiwavelength high resolution micro-Raman spectroscopy
Chang, Chun-Wei, Hong, Min-Hao, Lee, Wei-Fan, Lee, Kuan-Ching, Yang, Shen-Min, Tsai, Ming-Shan, Chuang, Yen, Fan, Yu-Ta, Hasuike, Noriyuki, Harima, Hiroshi, Ueda, Takeshi, Ishigaki, Toshikazu, Kang, Kitaek, Yoo, Woo Sik
Published in AIP advances (01.06.2012)
Published in AIP advances (01.06.2012)
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Journal Article
Contactless monitoring of Ge content and B concentration in ultrathin single and double layer Si1-xGex epitaxial films using multiwavelength micro-Raman spectroscopy
Chang, Chun-Wei, Hong, Min-Hao, Lee, Wei-Fan, Lee, Kuan-Ching, Jang Jian, Shiu-Ko, Chuang, Yen, Fan, Yu-Ta, Hasuike, Noriyuki, Harima, Hiroshi, Ueda, Takeshi, Ishigaki, Toshikazu, Kang, Kitaek, Sik Yoo, Woo
Published in AIP advances (01.03.2012)
Published in AIP advances (01.03.2012)
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Journal Article
Effects of Implant Temperature, Backside Contamination and Scribe Lines on Room Temperature Photoluminescence Measurements on Silicon
Yoo, Woo Sik, Ishigaki, Toshikazu, Kim, Jung Gon, Kang, Kitaek
Published in ECS journal of solid state science and technology (01.08.2021)
Published in ECS journal of solid state science and technology (01.08.2021)
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Journal Article
Thermal Silicidation of Ni/SiGe and Characterization of Resulting Silicide Films Using Raman Spectroscopy and X-ray Diffraction
Yoo, Woo Sik, Kang, Kitaek, Ishigaki, Toshikazu, Kim, Jung Gon, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro
Published in ECS transactions (08.09.2020)
Published in ECS transactions (08.09.2020)
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Journal Article
Thermal Silicidation of Ni/SiGe and Characterization of Resulting Nickel Germanosilicides
Yoo, Woo Sik, Kang, Kitaek, Ishigaki, Toshikazu, Kim, Jung Gon, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro
Published in ECS journal of solid state science and technology (01.12.2020)
Published in ECS journal of solid state science and technology (01.12.2020)
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Journal Article
Photoluminescence Characterization of Interface Quality of Bonded Silicon Wafers
Yoo, Woo Sik, Ishigaki, Toshikazu, Kang, Kitaek
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
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Journal Article
Non-Contact and Non-Destructive Characterization Alternatives of Ultra-Shallow Implanted Silicon p-n Junctions by Multi-Wavelength Raman and Photoluminescence Spectroscopy
Yoo, Woo Sik, Ueda, Takeshi, Ishigaki, Toshikazu, Kang, Kitaek, Fukumoto, Masashi, Hasuike, Noriyuki, Harima, Hiroshi, Yoshimoto, Masahiro
Published in Journal of the Electrochemical Society (2011)
Published in Journal of the Electrochemical Society (2011)
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Journal Article
Comprehensive Characterization of Dual Implanted Silicon after Electrical Activation Annealing
Yoo, Woo Sik, Jeon, Bong Seok, Kim, Sang Deok, Ishigaki, Toshikazu, Kang, Kitaek
Published in ECS transactions (04.05.2016)
Published in ECS transactions (04.05.2016)
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Journal Article
Ultra-Thin SiO2/Si Interface Quality In-Line Monitoring Using Multiwavelength Room Temperature Photoluminescence and Raman Spectroscopy
Yoo, Woo Sik, Kim, Byoung Gyu, Jin, Seung Woo, Ishigaki, Toshikazu, Kang, Kitaek
Published in ECS journal of solid state science and technology (01.01.2014)
Published in ECS journal of solid state science and technology (01.01.2014)
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Journal Article
Room Temperature Photoluminescence and Raman Characterization of Interface Characteristics of SiN/SiO2/Si Prepared under Various Deposition Techniques and Conditions
Yoo, Woo Sik, Kim, Byoung Gyu, Jin, Seung Woo, Ishigaki, Toshikazu, Kang, Kitaek
Published in ECS journal of solid state science and technology (01.01.2015)
Published in ECS journal of solid state science and technology (01.01.2015)
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Journal Article
Room Temperature Photoluminescence Characterization of Interface Quality of SiN/SiO2/Si Prepared under Various Deposition Techniques and Conditions
Yoo, Woo Sik, Kim, Byoung Gyu, Jin, Seung Woo, Ishigaki, Toshikazu, Kang, Kitaek
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Journal Article
Noncontact Monitoring of Activation and Residual Damage of Dual Implanted Silicon Using Room Temperature Photoluminescence
Yoo, Woo Sik, Jeon, Bong Seok, Kim, Sang Deok, Ishigaki, Toshikazu, Kang, Kitaek
Published in ECS journal of solid state science and technology (01.01.2015)
Published in ECS journal of solid state science and technology (01.01.2015)
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Journal Article
Room Temperature Photoluminescence Characterization of Interface Quality of SiN/SiO 2 /Si Prepared under Various Deposition Techniques and Conditions
Yoo, Woo Sik, Kim, Byoung Gyu, Jin, Seung Woo, Ishigaki, Toshikazu, Kang, Kitaek
Published in ECS transactions (31.03.2015)
Published in ECS transactions (31.03.2015)
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Journal Article
Dielectric/Si Interface Quality Characterization Using Room Temperature Photoluminescence
Yoo, Woo Sik, Kim, Byoung Gyu, Jin, Seung Woo, Ishigaki, Toshikazu, Kang, Kitaek
Published in ECS transactions (24.03.2014)
Published in ECS transactions (24.03.2014)
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Journal Article