Search Results - "Ishida, Hidetsugu" :: K.UTB vyhledávací portál | TBU Library Retrieval Portal

Intrinsic gettering of copper in silicon wafers

Intrinsic gettering of copper in silicon wafers

by ISOMAE, Seiichi, ISHIDA, Hidetsugu, ITOGA, Toshihiko, HOZAWA, Kazuyuki
Published in Journal of the Electrochemical Society (01.06.2002)

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Journal Article

Evaluation Method of the Gait Motion Based on Self-organizing Map Using the Gravity Center Fluctuation on the Sole

Evaluation Method of the Gait Motion Based on Self-organizing Map Using the Gravity Center Fluctuation on the Sole

by Makino, Koji, Nakamura, Masahiro, Omori, Hidenori, Hanagata, Yoshinobu, Ueda, Shohei, Nakagawa, Kyosuke, Ishida, Kazuyoshi, Terada, Hidetsugu
Published in International journal of automation and computing (01.10.2017)

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Journal Article

INSPECTION METHOD, INSPECTION APPARATUS AND METHOD OF PRODUCTION OF SEMICONDUCTOR DEVICE USING THEM

INSPECTION METHOD, INSPECTION APPARATUS AND METHOD OF PRODUCTION OF SEMICONDUCTOR DEVICE USING THEM

by HIRAIWA, ATSUSHI, ISHIDA, HIDETSUGU, TAKEDA, KAZUO
Year of Publication 01.04.2000

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Patent

Effect of JCM 102, a novel bisacodyl enteric seamless soft capsule, on colonic motor activity in conscious dogs

Effect of JCM 102, a novel bisacodyl enteric seamless soft capsule, on colonic motor activity in conscious dogs

by Chaki, Kyoji, Inui, Shoichi, Ishii, Takeshi, Ishida, Hidetsugu, Chatani, Nobuyasu, Kozaki, Toshio, Sunohara, Hideki, Yoshioka, Takeshi, Masakawa, Yasuaki, Nozaki, Masakatsu
Published in Japanese Journal of Pharmacology (1998)

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Journal Article

INSPECTION METHOD, INSPECTION APPARATUS AND METHOD OF PRODUCTION OF SEMICONDUCTOR DEVICE USING THEM

INSPECTION METHOD, INSPECTION APPARATUS AND METHOD OF PRODUCTION OF SEMICONDUCTOR DEVICE USING THEM

by HIRAIWAI, ATSUSHI, ISHIDA, HIDETSUGU, TAKEDA, KAZUO
Year of Publication 19.09.1996

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Patent

METHOD AND DEVICE FOR MEASURING DEFECT OF CRYSTAL ON CRYSTAL SURFACE

METHOD AND DEVICE FOR MEASURING DEFECT OF CRYSTAL ON CRYSTAL SURFACE

by WATASE, SHINICHIRO, HIRAIWA, ATSUSHI, ISHIDA, HIDETSUGU, TAKEDA, KAZUO, TAJIMA, TAKESHI
Year of Publication 25.09.1997

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Patent

Semiconductor device having buried boron and carbon regions, and method of manufacture thereof

Semiconductor device having buried boron and carbon regions, and method of manufacture thereof

by ISHIDA HIDETSUGU, ISOMAE SEIICHI
Year of Publication 21.10.2003

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Patent

Semiconductor device having buried boron and carbon regions, and method of manufacture thereof

Semiconductor device having buried boron and carbon regions, and method of manufacture thereof

by Ishida, Hidetsugu, Isomae, Seiichi
Year of Publication 21.10.2003

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Patent

Semiconductor wafer, manufacture thereof, semiconductor device and manufacture thereof

Semiconductor wafer, manufacture thereof, semiconductor device and manufacture thereof

by ISHIDA, HIDETSUGU, ISOMAE, SEIICHI
Year of Publication 16.05.2001

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Patent

Semiconductor device having buried boron and carbon regions

Semiconductor device having buried boron and carbon regions

by ISHIDA HIDETSUGU, ISOMAE SEIICHI
Year of Publication 06.03.2001

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Patent

SEMICONDUCTOR WAFER, MANUFACTURE THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

SEMICONDUCTOR WAFER, MANUFACTURE THEREOF, SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

by ISHIDA HIDETSUGU, ISOMAE SEIICHI
Year of Publication 11.09.1998

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Patent

METHOD AND APPARATUS FOR MEASUREMENT

METHOD AND APPARATUS FOR MEASUREMENT

by TAKEDA KAZUO, ISHIDA HIDETSUGU
Year of Publication 12.11.1996

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Patent

Inspection method, inspection apparatus and method of production of semiconductor device using them

Inspection method, inspection apparatus and method of production of semiconductor device using them

by ISHIDA; HIDETSUGU, TAKEDA; KAZUO, HIRAIWA; ATSUSHI
Year of Publication 10.08.1999

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Patent

Method and device for measuring defect of crystal on crystal surface

Method and device for measuring defect of crystal on crystal surface

by HIRAIWA ATSUSHI, TAKEDA KAZUO, ISHIDA HIDETSUGU
Year of Publication 14.04.1999

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Patent

SILICON WAFER HAVING EPITAXIAL GROWTH LAYER AND ITS MANUFACTURING METHOD AS WELL AS SEMICONDUCTOR DEVICE USING THE WATER

SILICON WAFER HAVING EPITAXIAL GROWTH LAYER AND ITS MANUFACTURING METHOD AS WELL AS SEMICONDUCTOR DEVICE USING THE WATER

by SUGINO YUSHI, ISHIDA HIDETSUGU, ISOMAE SEIICHI
Year of Publication 24.03.1998

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Patent

MEASURING METHOD OF SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

MEASURING METHOD OF SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

by HIRAIWA ATSUSHI, TAKEDA KAZUO, ISHIDA HIDETSUGU
Year of Publication 24.06.1997

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Patent

CRYSTAL DEFECT MEASURING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

CRYSTAL DEFECT MEASURING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

by HIRAIWA ATSUSHI, TAKEDA KAZUO, ISHIDA HIDETSUGU
Year of Publication 10.11.1995

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Patent

METHOD AND DEVICE FOR MEASURING DEFECT OF CRYSTAL ON CRYSTAL SURFACE

METHOD AND DEVICE FOR MEASURING DEFECT OF CRYSTAL ON CRYSTAL SURFACE

by WATASE, SHINICHIRO, HIRAIWA, ATSUSHI, ISHIDA, HIDETSUGU, TAKEDA, KAZUO, TAJIMA, TAKESHI
Year of Publication 20.12.2000

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Patent

METHOD AND DEVICE FOR MEASURING DEFECT OF CRYSTAL ON CRYSTAL SURFACE

METHOD AND DEVICE FOR MEASURING DEFECT OF CRYSTAL ON CRYSTAL SURFACE

by WATASE, SHINICHIRO, HIRAIWA, ATSUSHI, ISHIDA, HIDETSUGU, TAKEDA, KAZUO, TAJIMA, TAKESHI
Year of Publication 30.12.1998

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Patent

SEAMLESS CAPSULE CONTAINING EASILY OXIDIZABLE OILY SUBSTANCE AND ITS PRODUCTION

SEAMLESS CAPSULE CONTAINING EASILY OXIDIZABLE OILY SUBSTANCE AND ITS PRODUCTION

by FUJISAWA IKUKO, HARUHARA HIDEKI, ONO TORU, ISHIDA HIDETSUGU
Year of Publication 28.02.1995

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Patent