Meissner effect of superconducting InN
Inushima, Takashi, Maude, Duncan K., Muto, Daisuke, Nanishi, Yasushi
Published in Physica status solidi. C (01.05.2010)
Published in Physica status solidi. C (01.05.2010)
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Journal Article
Hopping conduction via the excited states of boron in p-type diamond
Inushima, Takashi, Matsushita, Takahiro, Ohya, Seishirou, Shiomi, Hiromu
Published in Diamond and related materials (01.04.2000)
Published in Diamond and related materials (01.04.2000)
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Journal Article
On the properties of impurity bands generated in P-type homoepitaxial diamond
Inushima, Takashi, Ogasawara, Atsushi, Shiraishi, Tadashi, Ohya, Seishiro, Karasawa, Shiro, Shiomi, Hiromu
Published in Diamond and related materials (01.06.1998)
Published in Diamond and related materials (01.06.1998)
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Journal Article
Conference Proceeding
Crystal growth of InN by MOCVD with electric field along the c-axis
Ota, Yuichi, Biswas, Ramkrishna, Higo, Masaaki, Inushima, Takashi
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Journal Article
Conference Proceeding
Crystal growth of InN by MOCVD with electric field along the @@ic@-axis
Ota, Yuichi, Biswas, Ramkrishna, Higo, Masaaki, Inushima, Takashi
Published in Journal of crystal growth (01.05.2009)
Published in Journal of crystal growth (01.05.2009)
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Journal Article
Lattice stability study of nitride semiconductors by the use of molecular dynamics calculation
Matsumura, Shigeru, Inushima, Takashi, Shiraishi, Tadashi
Published in Journal of crystal growth (15.06.1998)
Published in Journal of crystal growth (15.06.1998)
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Journal Article
Anomalous piezoelectric properties of ferroelectric semiconductor SbSBr
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Conference Proceeding
Characteristics of polycrystalline-Si thin film transistors fabricated by excimer laser annealing method
Kubo, N., Kusumoto, N., Inushima, T., Yamazaki, S.
Published in IEEE transactions on electron devices (01.10.1994)
Published in IEEE transactions on electron devices (01.10.1994)
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Journal Article