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Published in Expert systems with applications (01.03.2012)
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Published in Journal of materials chemistry. C, Materials for optical and electronic devices (02.05.2024)
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A high-breakdown-voltage β-Ga2O3 nanoFET with a beveled field-plate structure
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Published in Journal of materials chemistry. C, Materials for optical and electronic devices (02.05.2024)
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A high-breakdown-voltage β-GaO nanoFET with a beveled field-plate structure
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Published in Journal of materials chemistry. C, Materials for optical and electronic devices (02.05.2024)
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Published in Micromachines (Basel) (14.01.2024)
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Published in Applied physics express (01.07.2022)
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Heteroepitaxial α-Ga2O3 MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy
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VBP 1 represses cancer metastasis by enhancing HIF ‐1α degradation induced by pVHL
Kim, Ji Ae, Choi, Da Kyung, Min, Jung Sun, Kang, Inho, Kim, Jin Chul, Kim, Semi, Ahn, Jeong Keun
Published in The FEBS journal (01.01.2018)
Published in The FEBS journal (01.01.2018)
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Published in KIISE Transactions on Computing Practices (30.06.2024)
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