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Repairing the surface of InAs-based topological heterostructures
Pauka, S. J., Witt, J. D. S., Allen, C. N., Harlech-Jones, B., Jouan, A., Gardner, G. C., Gronin, S., Wang, T., Thomas, C., Manfra, M. J., Gukelberger, J., Gamble, J., Reilly, D. J., Cassidy, M. C.
Published in Journal of applied physics (21.09.2020)
Published in Journal of applied physics (21.09.2020)
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Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions
Tiira, J., Strambini, E., Amado, M., Roddaro, S., San-Jose, P., Aguado, R., Bergeret, F. S., Ercolani, D., Sorba, L., Giazotto, F.
Published in Nature communications (12.04.2017)
Published in Nature communications (12.04.2017)
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Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states
Lin, Lyu-Chih, Chen, Chih-Ying, Huang, Heming, Arsenijević, Dejan, Bimberg, Dieter, Grillot, Frédéric, Lin, Fan-Yi
Published in Optics letters (15.01.2018)
Published in Optics letters (15.01.2018)
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Optimization of InAs quantum dots through growth interruption on InAs/GaAs quantum dot heterostructure
Tongbram, B., Ahmad, A., Sengupta, S., Mandal, A., Singhal, J., Balgarkashi, A., Chakrabarti, S.
Published in Journal of luminescence (01.12.2017)
Published in Journal of luminescence (01.12.2017)
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Inventory of Non-Ataxia Signs (INAS): Validation of a New Clinical Assessment Instrument
Jacobi, H., Rakowicz, M., Rola, R., Fancellu, R., Mariotti, C., Charles, P., Dürr, A., Küper, M., Timmann, D., Linnemann, C., Schöls, L., Kaut, O., Schaub, C., Filla, A., Baliko, L., Melegh, B., Kang, J.-S., Giunti, P., van de Warrenburg, B. P. C., Fimmers, R., Klockgether, T.
Published in Cerebellum (London, England) (01.06.2013)
Published in Cerebellum (London, England) (01.06.2013)
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In-plane gate induced transition asymmetry of spin-resolved Landau levels in InAs-based quantum wells
Chiatti, Olivio, Boy, Johannes, Heyn, Christian, Hansen, Wolfgang, Fischer, Saskia F.
Published in APL materials (01.05.2024)
Published in APL materials (01.05.2024)
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Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept
Linares, P.G., López, E., Ramiro, I., Datas, A., Antolín, E., Shoji, Y., Sogabe, T., Okada, Y., Martí, A., Luque, A.
Published in Solar energy materials and solar cells (01.01.2015)
Published in Solar energy materials and solar cells (01.01.2015)
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Field Dependent Transport Properties in InAs Nanowire Field Effect Transistors
Dayeh, Shadi A, Susac, Darija, Kavanagh, Karen L, Yu, Edward T, Wang, Deli
Published in Nano letters (01.10.2008)
Published in Nano letters (01.10.2008)
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Temperature-dependent photoluminescence from type-II InSb∕InAs quantum dots
Lyublinskaya, O. G., Solov’ev, V. A., Semenov, A. N., Meltser, B. Ya, Terent’ev, Ya. V., Prokopova, L. A., Toropov, A. A., Sitnikova, A. A., Rykhova, O. V., Ivanov, S. V., Thonke, K., Sauer, R.
Published in Journal of applied physics (01.05.2006)
Published in Journal of applied physics (01.05.2006)
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Relation of dietary inorganic arsenic exposure and urinary inorganic arsenic metabolites excretion in Japanese subjects
Oguri, Tomoko, Yoshinaga, Jun, Suzuki, Yayoi, Tao, Hiroaki, Nakazato, Tetsuya
Published in Journal of Environmental Science and Health, Part B (03.06.2017)
Published in Journal of Environmental Science and Health, Part B (03.06.2017)
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Quantum and Optoelectronic Devices, Circuits and Systems
Year of Publication 2023
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