Bilayer Graphene Grown on 4H-SiC (0001) Step-Free Mesas
Nyakiti, L.O, Myers-Ward, R. L, Wheeler, V. D, Imhoff, E. A, Bezares, F.J, Chun, H, Caldwell, J. D, Friedman, A. L, Matis, B. R, Baldwin, J. W, Campbell, P. M, Culbertson, J. C, Eddy, C. R, Jernigan, G. G, Gaskill, D. K
Published in Nano letters (11.04.2012)
Published in Nano letters (11.04.2012)
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Journal Article
Investigation of the Epitaxial Graphene/p-SiC Heterojunction
Anderson, T. J., Hobart, K. D., Nyakiti, L. O., Wheeler, V. D., Myers-Ward, R. L., Caldwell, J. D., Bezares, F. J., Jernigan, G. G., Tadjer, M. J., Imhoff, E. A., Koehler, A. D., Gaskill, D. K., Eddy, C. R., Kub, F. J.
Published in IEEE electron device letters (01.11.2012)
Published in IEEE electron device letters (01.11.2012)
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Journal Article
Spontaneous Conversion of Basal Plane Dislocations in 4° Off-Axis 4H–SiC Epitaxial Layers
Myers-Ward, R. L, Mahadik, N. A, Wheeler, V. D, Nyakiti, L. O, Stahlbush, R. E, Imhoff, E. A, Hobart, K. D, Eddy, C. R, Gaskill, D. K
Published in Crystal growth & design (05.11.2014)
Published in Crystal growth & design (05.11.2014)
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Journal Article
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage
Freitas, J.A., Mastro, M.A., Imhoff, E.A., Tadjer, M.J., Eddy, C.R., Kub, F.J.
Published in Journal of crystal growth (01.09.2010)
Published in Journal of crystal growth (01.09.2010)
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Journal Article
Nanocrystalline Diamond Integration with III-Nitride HEMTs
Anderson, T. J., Hobart, K. D., Tadjer, M. J., Koehler, A. D., Imhoff, E. A., Hite, J. K., Feygelson, T. I., Pate, B. B., Eddy, C. R., Kub, F. J.
Published in ECS journal of solid state science and technology (01.01.2017)
Published in ECS journal of solid state science and technology (01.01.2017)
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Journal Article
Hyperspectral Electroluminescence Characterization of OFF-State Device Characteristics in Proton Irradiated High Voltage AlGaN/GaN HEMTs
Anderson, T. J., Koehler, A. D., Freitas, J. A., Weaver, B. D., Greenlee, J. D., Tadjer, M. J., Imhoff, E. A., Hobart, K. D., Kub, F. J.
Published in ECS journal of solid state science and technology (01.01.2016)
Published in ECS journal of solid state science and technology (01.01.2016)
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Journal Article
Mitigation of BPD by Pre-Epigrowth High Temperature Substrate Annealing
Mahadik, Nadeemullah A., Tadjer, M.J., Stahlbush, Robert E., Ruland, G.E., Affouda, C.A., Imhoff, Eugene A.
Published in Materials Science Forum (24.05.2016)
Published in Materials Science Forum (24.05.2016)
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Journal Article
Performance and Stability of Large-Area 4H-SiC 10-kV Junction Barrier Schottky Rectifiers
Hull, B.A., Sumakeris, J.J., O'Loughlin, M.J., Qingchun Zhang, Richmond, J., Powell, A.R., Imhoff, E.A., Hobart, K.D., Rivera-Lopez, A., Hefner, A.R.
Published in IEEE transactions on electron devices (01.08.2008)
Published in IEEE transactions on electron devices (01.08.2008)
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Journal Article
High-Performance Smoothly Tapered Junction Termination Extensions for High-Voltage 4H-SiC Devices
Imhoff, E. A., Kub, F. J., Hobart, K. D., Ancona, M. G., VanMil, B. L., Gaskill, D. K., Lew, K., Myers-Ward, R. L., Eddy, Charles R.
Published in IEEE transactions on electron devices (01.10.2011)
Published in IEEE transactions on electron devices (01.10.2011)
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Journal Article
Basal Plane Dislocation Mitigation Using High Temperature Annealing in 4H-SiC Epitaxy
Mahadik, Nadeemullah A, Nath, Anindya, Imhoff, Eugene A, Stahlbush, Robert E, Nipoti, Roberta
Published in ECS transactions (31.08.2013)
Published in ECS transactions (31.08.2013)
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Journal Article
Optimization of Si IGBT/SiC JBS Diode Hybrid Modules for Medium Voltage Applications
Hobart, Karl D, Imhoff, Eugene, Duong, Tam, Hefner, Allen
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Journal Article
The use of accounting information in bank lending decisions
Danos, Paul, Holt, Doris L., Imhoff, Eugene A.
Published in Accounting, organizations and society (1989)
Published in Accounting, organizations and society (1989)
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Journal Article
Improved GaN-based HEMT performance by nanocrystalline diamond capping
Anderson, T.J., Pate, B.B., Binari, S.C., Eddy, C.R., Hobart, K.D., Tadjer, M.J., Feygelson, T.I., Imhoff, E.A., Meyer, D.J., Katzer, D.S., Hite, J.K., Kub, F.J.
Published in 70th Device Research Conference (01.06.2012)
Published in 70th Device Research Conference (01.06.2012)
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