3.8 W/mm RF Power Density for ALD Al2O3-Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.02.2019)
Published in IEEE electron device letters (01.02.2019)
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Journal Article
An enhanced two-dimensional hole gas (2DHG) C–H diamond with positive surface charge model for advanced normally-off MOSFET devices
Alhasani, Reem, Yabe, Taichi, Iyama, Yutaro, Oi, Nobutaka, Imanishi, Shoichiro, Nguyen, Quang Ngoc, Kawarada, Hiroshi
Published in Scientific reports (10.03.2022)
Published in Scientific reports (10.03.2022)
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Journal Article
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al2O3
Kudara, Ken, Imanishi, Shoichiro, Hiraiwa, Atsushi, Komatsuzaki, Yuji, Yamaguchi, Yutaro, Kawamura, Yoshifumi, Shinjo, Shintaro, Kawarada, Hiroshi
Published in IEEE transactions on electron devices (01.08.2021)
Published in IEEE transactions on electron devices (01.08.2021)
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Journal Article
Evaluation of Euler number of complex Grassmann manifold G(k,N) via Mathai-Quillen formalism
Imanishi, Shoichiro, Jinzenji, Masao, Kuwata, Ken
Published in Journal of geometry and physics (01.10.2022)
Published in Journal of geometry and physics (01.10.2022)
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Journal Article
MOSFETs on (110) C-H Diamond: ALD Al₂O₃/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization
Liu, Benjian, Bi, Te, Fu, Yu, Kudara, Ken, Imanishi, Shoichiro, Liu, Kang, Dai, Bing, Zhu, Jiaqi, Kawarada, Hiroshi
Published in IEEE transactions on electron devices (01.03.2022)
Published in IEEE transactions on electron devices (01.03.2022)
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Journal Article
Drain Current Density Over 1.1 A/mm in 2D Hole Gas Diamond MOSFETs With Regrown p++-Diamond Ohmic Contacts
Imanishi, Shoichiro, Kudara, Ken, Ishiwata, Hitoshi, Horikawa, Kiyotaka, Amano, Shotaro, Iwataki, Masayuki, Morishita, Aoi, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.02.2021)
Published in IEEE electron device letters (01.02.2021)
Get full text
Journal Article
High Output Power Density of 2DHG Diamond MOSFETs With Thick ALD-Al 2 O 3
Kudara, Ken, Imanishi, Shoichiro, Hiraiwa, Atsushi, Komatsuzaki, Yuji, Yamaguchi, Yutaro, Kawamura, Yoshifumi, Shinjo, Shintaro, Kawarada, Hiroshi
Published in IEEE transactions on electron devices (01.08.2021)
Published in IEEE transactions on electron devices (01.08.2021)
Get full text
Journal Article
3.8 W/mm RF Power Density for ALD Al 2 O 3 -Based Two-Dimensional Hole Gas Diamond MOSFET Operating at Saturation Velocity
Imanishi, Shoichiro, Horikawa, Kiyotaka, Oi, Nobutaka, Okubo, Satoshi, Kageura, Taisuke, Hiraiwa, Atsushi, Kawarada, Hiroshi
Published in IEEE electron device letters (01.02.2019)
Published in IEEE electron device letters (01.02.2019)
Get full text
Journal Article