Effect of postgrowth techniques on the characteristics of triple-junction inGaP/GaAs/Ge solar cells
Andreev, V.M, Grebenshchikova, E.A, Dmitriev, P.A, Ilinskaya, N.D, Kalinovsky, V.S, Kontrosh, E.V, Malevskaya, A.V, Usikova, A.A
Published in Semiconductors (Woodbury, N.Y.) (01.09.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.09.2014)
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Journal Article
Resistance of 4H-SiC Schottky barriers at high forward-current densities
Ivanov, P. A., Samsonova, T. P., Il’inskaya, N. D., Serebrennikova, O. Yu, Kon’kov, O. I., Potapov, A. S.
Published in Semiconductors (Woodbury, N.Y.) (01.07.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.07.2015)
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Journal Article
High-power LEDs based on InGaAsP/InP heterostructures
Rakovics, V., Imenkov, A. N., Sherstnev, V. V., Serebrennikova, O. Yu, Il’inskaya, N. D., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2014)
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Journal Article
Temperature dependence of the threshold current in quantum-well WGM lasers (2.0–2.5 μm)
Imenkov, A. N., Sherstnev, V. V., Kovalev, I. V., Il’inskaya, N. D., Serebrennikova, O. Yu, Teissier, R., Baranov, A. N., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.06.2013)
Published in Semiconductors (Woodbury, N.Y.) (01.06.2013)
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Journal Article
InAsSbP Photodiodes for 2.6-2.8-[micro]m Wavelengths
Il'inskaya, N.D, Karandashev, S.A, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Published in Technical physics (01.02.2018)
Published in Technical physics (01.02.2018)
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Journal Article
P-InAsSbP/p-InAs0.88Sb0.12/n-InAs0.88Sb0.12/n+-InAs PDs with a smooth p-n junction
Il'inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus', N.M., Usikova, A.A.
Published in Infrared physics & technology (01.01.2018)
Published in Infrared physics & technology (01.01.2018)
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Journal Article
Corrigendum to “InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes ([formula omitted]0.1 = 5.2 μm, 300 K) operating in the 77–353 K temperature range” [Infrared Phys. Technol. 73 (2015) 232–237]
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
High-Speed Bridge Photodetectors for the Mid-IR Spectral Region
Pivovarova, A. A., Kunitsyna, E. V., Konovalov, G. G., Slipchenko, S. O., Podoskin, A. A., Andreev, I. A., Pikhtin, N. A., Il’inskaya, N. D., Chernyakov, A. E., Yakovlev, Yu. P.
Published in Journal of applied spectroscopy (01.03.2023)
Published in Journal of applied spectroscopy (01.03.2023)
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Journal Article
InAsSbP/InAs0.9Sb0.1/InAs DH photodiodes (λ0.1=5.2μm, 300K) operating in the 77–353К temperature range
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
InAsSbP/InAs 0.9 Sb 0.1 /InAs DH photodiodes ( λ 0.1 = 5.2 μm, 300 K) operating in the 77–353 К temperature range
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.11.2015)
Published in Infrared physics & technology (01.11.2015)
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Journal Article
Photodiode 1 x 64 linear array based on a double p-InAsSbP/n-In[As.sub.0.92][Sb.sub.0.08]/[n.sup.+]-InAs heterostructure
Il'inskaya, N.D, Karandashev, S.A, Karpukhina, N.G, Lavrov, A.A, Matveev, B.A, Remennyi, M.A, Stus, N.M, Usikova, A.A
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
Published in Semiconductors (Woodbury, N.Y.) (01.05.2016)
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Journal Article
P-InAsSbP/n-InAs single heterostructure back-side illuminated 8×8 photodiode array
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.09.2016)
Published in Infrared physics & technology (01.09.2016)
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Journal Article
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
Zakgeim, A. L., Il’inskaya, N. D., Karandashev, S. A., Lavrov, A. A., Matveev, B. A., Remennyy, M. A., Stus’, N. M., Usikova, A. A., Cherniakov, A. E.
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
Published in Semiconductors (Woodbury, N.Y.) (01.02.2017)
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Journal Article
Low dark current P-InAsSbP/n-InAs/N-InAsSbP/n+-InAs double heterostructure back-side illuminated photodiodes
Brunkov, P.N., Il’inskaya, N.D., Karandashev, S.A., Karpukhina, N.G., Lavrov, A.A., Matveev, B.A., Remennyi, M.A., Stus’, N.M., Usikova, A.A.
Published in Infrared physics & technology (01.05.2016)
Published in Infrared physics & technology (01.05.2016)
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Journal Article
P-InAsSbP/[n.sup.0]-InAs/[n.sup.+]-InAs photodiodes for operation at moderate cooling
Brunkov, P.N, Il'inskaya, N.D, Karandashev, S.A, Latnikova, N.M, Lavrov, A.A, Matveev, B.A, Petrov, A.S, Remennyi, M.A, Sevostyanov, E.N, Stus, N.M
Published in Semiconductors (Woodbury, N.Y.) (01.10.2014)
Published in Semiconductors (Woodbury, N.Y.) (01.10.2014)
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Journal Article
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW
Mikhailova, M. P., Andreev, I. A., Konovalov, G. G., Danilov, L. V., Ivanov, E. V., Kunitsyna, E. V., Il’inskaya, N. D., Levin, R. V., Pushnyi, B. V., Yakovlev, Yu. P.
Published in Semiconductors (Woodbury, N.Y.) (01.08.2018)
Published in Semiconductors (Woodbury, N.Y.) (01.08.2018)
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Journal Article
Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials
Ushanov, V. I., Chaldyshev, V. V., Bert, N. A., Nevedomsky, V. N., Il’inskaya, N. D., Lebedeva, N. M., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.
Published in Semiconductors (Woodbury, N.Y.) (01.12.2015)
Published in Semiconductors (Woodbury, N.Y.) (01.12.2015)
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Journal Article
Fröhlich resonance in the AsSb/AlGaAs system
Ushanov, V. I., Chaldyshev, V. V., Il’inskaya, N. D., Lebedeva, N. M., Yagovkina, M. A., Preobrazhenskii, V. V., Putyato, M. A., Semyagin, B. R.
Published in Physics of the solid state (01.10.2014)
Published in Physics of the solid state (01.10.2014)
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