High thermal stability of doped oxide semiconductor for monolithic 3D integration
Kawai, Hiroki, Kataoka, Junji, Saito, Nobuyoshi, Ueda, Tomomasa, Ishihara, Takamitsu, Ikeda, Keiji
Published in MRS bulletin (01.11.2021)
Published in MRS bulletin (01.11.2021)
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Journal Article
Tungsten/In-Sn-O stacked source/drain electrode structure of In-Ga-Zn-O thin-film transistor for low-contact resistance and suppressing channel shortening effect
Kataoka, Junji, Saito, Nobuyoshi, Ueda, Tomomasa, Tezuka, Tsutomu, Sawabe, Tomoaki, Ikeda, Keiji
Published in Japanese Journal of Applied Physics (01.04.2019)
Published in Japanese Journal of Applied Physics (01.04.2019)
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Journal Article
Origin of High Mobility in InSnZnO MOSFETs
Saito, Nobuyoshi, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in IEEE journal of the Electron Devices Society (2018)
Published in IEEE journal of the Electron Devices Society (2018)
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Journal Article
Enigmatic Diphyllatea eukaryotes: culturing and targeted PacBio RS amplicon sequencing reveals a higher order taxonomic diversity and global distribution
Orr, Russell J S, Zhao, Sen, Klaveness, Dag, Yabuki, Akinori, Ikeda, Keiji, Watanabe, Makoto M, Shalchian-Tabrizi, Kamran
Published in BMC evolutionary biology (18.07.2018)
Published in BMC evolutionary biology (18.07.2018)
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Journal Article
High-Mobility and H2-Anneal Tolerant InGaSiO/InGaZnO/InGaSiO Double Hetero Channel Thin Film Transistor for Si-LSI Compatible Process
Saito, Nobuyoshi, Miura, Kentaro, Ueda, Tomomasa, Tezuka, Tsutomu, Ikeda, Keiji
Published in IEEE journal of the Electron Devices Society (01.01.2018)
Published in IEEE journal of the Electron Devices Society (01.01.2018)
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Journal Article
Correction to: Enigmatic Diphyllatea eukaryotes: culturing and targeted PacBio RS amplicon sequencing reveals a higher order taxonomic diversity and global distribution
Orr, Russell J S, Zhao, Sen, Klaveness, Dag, Yabuki, Akinori, Ikeda, Keiji, Watanabe, Makoto M, Shalchian-Tabrizi, Kamran
Published in BMC evolutionary biology (03.08.2018)
Published in BMC evolutionary biology (03.08.2018)
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Journal Article
In situ doped epitaxial growth of highly dopant-activated n+-Ge layers for reduction of parasitic resistance in Ge-nMISFETs
Moriyama, Yoshihiko, Kamimuta, Yuuichi, Kamata, Yoshiki, Ikeda, Keiji, Sakai, Akira, Tezuka, Tsutomu
Published in Applied physics express (01.10.2014)
Published in Applied physics express (01.10.2014)
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Journal Article
Accurate evaluation of Ge metal-insulator-semiconductor interface properties
Taoka, Noriyuki, Ikeda, Keiji, Mizubayashi, Wataru, Morita, Yukinori, Migita, Shinji, Ota, Hiroyuki, Takagi, Shinichi
Published in Journal of applied physics (15.09.2011)
Published in Journal of applied physics (15.09.2011)
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Journal Article
The 2016 Eruptions of Niigata-Yakeyama Volcano: Eruption Model Based on the Sequence of Volcanic Activity and Petrography of Volcanic Ash
Yanagisawa, Hiroaki, Oikawa, Teruki, Kawaguchi, Ryohei, Kimura, Kazuhiro, Itoh, Jun’ichi, Koshida, Hirokazu, Kato, Koji, Ando, Shinobu, Ikeda, Keiji, Utsunomiya, Shingo, Bando, Aiko, Okuyama, Satoshi, Kamata, Rintaro, Kodama, Tokuro, Komori, Jiro, Narama, Chiyuki
Published in BULLETIN OF THE VOLCANOLOGICAL SOCIETY OF JAPAN (30.09.2022)
Published in BULLETIN OF THE VOLCANOLOGICAL SOCIETY OF JAPAN (30.09.2022)
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Journal Article
Characterization of platinum germanide/Ge(100) Schottky barrier height for Ge channel Metal Source/Drain MOSFET
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Journal Article
Conference Proceeding
(Invited) Ge-on-Insulator MOSFETs for High-Performance and 3D-LSI Applications
Tezuka, Tsutomu, Ikeda, Keiji, Kamata, Yoshiki, Kamimuta, Yuuichi, Usuda, Koji, Moriyama, Yoshihiko, Ono, Mizuki, Koike, Masahiro, Oda, Minoru, Irisawa, Toshifumi, Mieda, Eiko, Maeda, Tatsuro, Jevasuwan, Wipakorn, Kurashima, Yuichi, Takagi, Hideki, Furuse, Kiyoe, Kurosawa, Etsuo
Published in ECS transactions (07.08.2014)
Published in ECS transactions (07.08.2014)
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Journal Article
(Invited) Mobility Enhancement of Uniaxially Strained Germanium Nanowire MOSFETs
Ikeda, Keiji, Kamimuta, Yuuichi, Moriyama, Yoshihiko, Ono, Mizuki, Usuda, Koji, Oda, Minoru, Irisawa, Toshifumi, Kosemura, Daisuke, Ogura, Atsushi, Tezuka, Tsutomu
Published in ECS transactions (12.08.2014)
Published in ECS transactions (12.08.2014)
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Journal Article
Effects of ambient conditions in thermal treatment for Ge(0 0 1) surfaces on Ge–MIS interface properties
Taoka, Noriyuki, Ikeda, Keiji, Yamashita, Yoshimi, Sugiyama, Naoharu, Takagi, Shin-ichi
Published in Semiconductor science and technology (01.01.2007)
Published in Semiconductor science and technology (01.01.2007)
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Journal Article
Conference Proceeding
Non-Recessed-Gate Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors with High RF Performance
Endoh, Akira, Yamashita, Yoshimi, Ikeda, Keiji, Higashiwaki, Masataka, Hikosaka, Kohki, Matsui, Toshiaki, Hiyamizu, Satoshi, Mimura, Takashi
Published in Japanese Journal of Applied Physics (01.04.2004)
Published in Japanese Journal of Applied Physics (01.04.2004)
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Journal Article
Ion-Implanted Impurity Profiles in Ge Substrates and Amorphous Layer Thickness Formed by Ion Implantation
Suzuki, K., Ikeda, K., Yamashita, Y., Harada, M., Taoka, N., Kiso, O., Yamamoto, T., Sugiyama, N., Takagi, S.-I.
Published in IEEE transactions on electron devices (01.04.2009)
Published in IEEE transactions on electron devices (01.04.2009)
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Journal Article
Surrounding Gate Vertical-Channel FET With a Gate Length of 40 nm Using BEOL-Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
Fujiwara, Hirokazu, Sato, Yuta, Saito, Nobuyoshi, Ueda, Tomomasa, Ikeda, Keiji
Published in IEEE transactions on electron devices (01.12.2020)
Published in IEEE transactions on electron devices (01.12.2020)
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Journal Article
Ion-Implanted B Concentration Profiles in Ge
Suzuki, Kunihiro, Ikeda, Keiji, Yamashita, Yoshimi, Takagi, Shin-ichi
Published in Japanese Journal of Applied Physics (01.03.2007)
Published in Japanese Journal of Applied Physics (01.03.2007)
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Journal Article