Growth of bulk single crystal ScAlMgO4 boules and GaN films on ScAlMgO4 substrates for GaN-based optical devices, high-power and high-frequency transistors
Fukuda, Tsuguo, Shiraishi, Yuji, Nanto, Toki, Fujii, Takashi, Sugiyama, Kazumasa, Simura, Rayko, Iechi, Hiroyuki, Tadatomo, Kazuyuki
Published in Journal of crystal growth (15.11.2021)
Published in Journal of crystal growth (15.11.2021)
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Journal Article
Characteristics of organic inverters using vertical- and lateral-type organic transistors
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Journal Article
Conference Proceeding
Inverter Circuits using Pentacene and ZnO Transistors
Iechi, Hiroyuki, Watanabe, Yasuyuki, Kudo, Kazuhiro
Published in Japanese Journal of Applied Physics (01.04.2007)
Published in Japanese Journal of Applied Physics (01.04.2007)
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Journal Article
Organic Inverter Using Monolithically Stacked Static Induction Transistors
Iechi, Hiroyuki, Watanabe, Yasuyuki, Yamauchi, Hiroshi, Kudo, Kazuhiro
Published in Japanese Journal of Applied Physics (01.01.2010)
Published in Japanese Journal of Applied Physics (01.01.2010)
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Journal Article
Improvement in On/Off Ratio of Pentacene Static Induction Transistors with Ultrathin CuPc Layer
Watanabe, Yasuyuki, Iechi, Hiroyuki, Kudo, Kazuhiro
Published in Japanese Journal of Applied Physics (01.04.2006)
Published in Japanese Journal of Applied Physics (01.04.2006)
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Journal Article
Vertical type organic light emitting device using thin-film ZnO electrode
Iechi, Hiroyuki, Sakai, Masatoshi, Nakamura, Kenji, Iizuka, Masaaki, Nakamura, Masakazu, Kudo, Kazuhiro
Published in Synthetic metals (22.09.2005)
Published in Synthetic metals (22.09.2005)
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Journal Article
Conference Proceeding
Vertical-type organic device using thin-film ZnO transparent electrode
Iechi, Hiroyuki, Okawara, Takeshi, Sakai, Masatoshi, Nakanura, Masakazu, Kudo, Kazuhiro
Published in Electrical engineering in Japan (30.01.2007)
Published in Electrical engineering in Japan (30.01.2007)
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Journal Article
Growth of bulk single crystal ScAlMgO4 boules and GaN films on ScAlMgO4 substrates for GaN-based optical devices, high-power and high-frequency transistors
Fukuda, Tsuguo, Shiraishi, Yuji, Nanto, Toki, Fujii, Takashi, Sugiyama, Kazumasa, Simura, Rayko, Iechi, Hiroyuki, Tadatomo, Kazuyuki
Published in Journal of crystal growth (15.11.2021)
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Published in Journal of crystal growth (15.11.2021)
Journal Article
Selectively doped n-GaInP/GaAs heterostructures grown by MOCVD
TONE, K, NAKAYAMA, T, IECHI, H, OHTSU, K, KUKIMOTO, H
Published in Japanese Journal of Applied Physics (01.06.1986)
Published in Japanese Journal of Applied Physics (01.06.1986)
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Journal Article