Mid-infrared beam splitter for ultrashort pulses
Somma, Carmine, Reimann, Klaus, Woerner, Michael, Kiel, Thomas, Busch, Kurt, Braun, Andreas, Matalla, Mathias, Ickert, Karina, Krüger, Olaf
Published in Optics letters (01.08.2017)
Published in Optics letters (01.08.2017)
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Enhancement-mode vertical (100) β-Ga 2 O 3 FinFETs with an average breakdown strength of 2.7 MV cm −1
Tetzner, Kornelius, Klupsch, Michael, Popp, Andreas, Bin Anooz, Saud, Chou, Ta-Shun, Galazka, Zbigniew, Ickert, Karina, Matalla, Mathias, Unger, Ralph-Stephan, Treidel, Eldad Bahat, Wolf, Mihaela, Trampert, Achim, Würfl, Joachim, Hilt, Oliver
Published in Japanese Journal of Applied Physics (01.06.2023)
Published in Japanese Journal of Applied Physics (01.06.2023)
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Lateral 1.8 kV \beta -Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit
Tetzner, Kornelius, Bahat Treidel, Eldad, Hilt, Oliver, Popp, Andreas, Bin Anooz, Saud, Wagner, Gunter, Thies, Andreas, Ickert, Karina, Gargouri, Hassan, Wurfl, Joachim
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Journal Article
Lateral 1.8 kV $\beta$ -Ga 2 O 3 MOSFET With 155 MW/cm 2 Power Figure of Merit
Tetzner, Kornelius, Bahat Treidel, Eldad, Hilt, Oliver, Popp, Andreas, Bin Anooz, Saud, Wagner, Gunter, Thies, Andreas, Ickert, Karina, Gargouri, Hassan, Wurfl, Joachim
Published in IEEE electron device letters (01.09.2019)
Published in IEEE electron device letters (01.09.2019)
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Lateral 1.8 kV [Formula Omitted]-Ga2O3 MOSFET With 155 MW/cm2 Power Figure of Merit
Tetzner, Kornelius, Eldad Bahat Treidel, Hilt, Oliver, Popp, Andreas, Saud Bin Anooz, Wagner, Gunter, Thies, Andreas, Ickert, Karina, Gargouri, Hassan, Wurfl, Joachim
Published in IEEE electron device letters (01.01.2019)
Published in IEEE electron device letters (01.01.2019)
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Journal Article
Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1
Tetzner, Kornelius, Klupsch, Michael, Popp, Andreas, Bin Anooz, Saud, Chou, Ta-Shun, Galazka, Zbigniew, Ickert, Karina, Matalla, Mathias, Unger, Ralph-Stephan, Treidel, Eldad Bahat, Wolf, Mihaela, Trampert, Achim, Würfl, Joachim, Hilt, Oliver
Published in Japanese Journal of Applied Physics (01.06.2023)
Published in Japanese Journal of Applied Physics (01.06.2023)
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GaN‐Based Vertical n‐Channel MISFETs on Free Standing Ammonothermal GaN Substrates
Treidel, Eldad Bahat, Hilt, Oliver, Stöver, Julian, Hoffmann, Veit, Brunner, Frank, Ickert, Karina, Hochheim, Stefan, Naumann, Franziska, Gargouri, Hassan, Martinez, Bryan, Weyers, Markus, Würfl, Joachim
Published in Physica status solidi. A, Applications and materials science (21.04.2018)
Published in Physica status solidi. A, Applications and materials science (21.04.2018)
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