Noncontact evaluation for interface states by photocarrier counting
Furuta, Masaaki, Shimizu, Kojiro, Maeta, Takahiro, Miyashita, Moriya, Izunome, Koji, Kubota, Hiroshi
Published in Japanese Journal of Applied Physics (01.03.2018)
Published in Japanese Journal of Applied Physics (01.03.2018)
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Journal Article
Nondestructive interface state measurement by pulse photoconductivity method
Furuta, Masaaki, Shimizu, Kojiro, Maeta, Takahiro, Miyashita, Moriya, Izunome, Koji, Kubota, Hiroshi
Published in Surface and interface analysis (01.11.2016)
Published in Surface and interface analysis (01.11.2016)
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Journal Article
Atom probe tomography study on Ge1−x−ySnxCy hetero-epitaxial film on Ge substrates
Kamiyama, Eiji, Sueoka, Koji, Terasawa, Kengo, Yamaha, Takashi, Nakatsuka, Osamu, Zaima, Shigeaki, Izunome, Koji, Kashima, Kazuhiko, Uchida, Hiroshi
Published in Thin solid films (01.10.2015)
Published in Thin solid films (01.10.2015)
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Journal Article
Point Defect Reaction in Silicon Wafers by Rapid Thermal Processing at More Than 1300°C Using an Oxidation Ambient
Sudo, Haruo, Nakamura, Kozo, Maeda, Susumu, Okamura, Hideyuki, Izunome, Koji, Sueoka, Koji
Published in ECS journal of solid state science and technology (2019)
Published in ECS journal of solid state science and technology (2019)
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Analysis for positions of Sn atoms in epitaxial Ge1−xSnx film in low temperature depositions
Kamiyama, Eiji, Sueoka, Koji, Nakatsuka, Osamu, Taoka, Noriyuki, Zaima, Shigeaki, Izunome, Koji, Kashima, Kazuhiko
Published in Thin solid films (01.04.2014)
Published in Thin solid films (01.04.2014)
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Conference Proceeding
Improvement effect of electrical properties in post-annealed wafer-bonded Ge(001)-OI substrate
Yamasaka, Shuto, Nakamura, Yoshiaki, Yoshitake, Osamu, Kikkawa, Jun, Izunome, Koji, Sakai, Akira
Published in Physica status solidi. A, Applications and materials science (01.03.2014)
Published in Physica status solidi. A, Applications and materials science (01.03.2014)
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Erratum: Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices [e-J. Surf. Sci. Nanotech. Vol. 15, pp. 127-134 (2017)]
Fukuda, Etsuo, Endoh, Tetsuo, Ishikawa, Takashi, Izunome, Koji, Kamijo, Kazutaka, Miyashita, Moriya, Sakamoto, Takao, Kageshima, Hiroyuki
Published in E-journal of surface science and nanotechnology (25.08.2018)
Published in E-journal of surface science and nanotechnology (25.08.2018)
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Journal Article
Influence of Oxygen Concentration of Si Wafer Surface in Si Emission on Nano Ordered Three-Dimensional Structure Devices
Fukuda, Etsuo, Endoh, Tetsuo, Ishikawa, Takashi, Izunome, Koji, Kamijo, Kazutaka, Miyashita, Moriya, Sakamoto, Takao, Kageshima, Hiroyuki
Published in E-journal of surface science and nanotechnology (01.01.2017)
Published in E-journal of surface science and nanotechnology (01.01.2017)
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Impact of Rapid Thermal Oxidation at Ultrahigh-Temperatures on Oxygen Precipitation Behavior in Czochralski-Silicon Crystals
Araki, Koji, Maeda, Susumu, Senda, Takeshi, Sudo, Haruo, Saito, Hiroyuki, Izunome, Koji
Published in ECS journal of solid state science and technology (01.01.2013)
Published in ECS journal of solid state science and technology (01.01.2013)
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Journal Article
Growth and Characterization of Heteroepitaxial Layers of GeSiSn Ternary Alloy
Yamaha, Takashi, Nakatsuka, Osamu, Takeuchi, Shotaro, Takeuchi, Wakana, Taoka, Noriyuki, Araki, Koji, Izunome, Koji, Zaima, Shigeaki
Published in ECS transactions (15.03.2013)
Published in ECS transactions (15.03.2013)
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Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal--Oxide--Semiconductor Field-Effect Transistor
Iwasaki, Yuji, Nakamura, Yoshiaki, Kikkawa, Jun, Sato, Motoki, Toyoda, Eiji, Isogai, Hiromichi, Izunome, Koji, Sakai, Akira
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors on (110) Si
Jeon, Sung-Ho, Taoka, Noriyuki, Matsumoto, Hiroaki, Nakano, Kiyotaka, Koyama, Susumu, Kakibayasi, Hiroshi, Araki, Koji, Miyashita, Moriya, Izunome, Koji, Takenaka, Mitsuru, Takagi, Shinichi
Published in Japanese Journal of Applied Physics (01.04.2013)
Published in Japanese Journal of Applied Physics (01.04.2013)
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Journal Article
Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
Toyoda, Eiji, Sakai, Akira, Isogai, Hiromichi, Senda, Takeshi, Izunome, Koji, Nakatsuka, Osamu, Ogawa, Masaki, Zaima, Shigeaki
Published in Japanese Journal of Applied Physics (01.01.2009)
Published in Japanese Journal of Applied Physics (01.01.2009)
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Journal Article
Electrical Characterization of Wafer-Bonded Germanium-on-Insulator Substrates Using a Four-Point-Probe Pseudo-Metal–Oxide–Semiconductor Field-Effect Transistor
Iwasaki, Yuji, Nakamura, Yoshiaki, Kikkawa, Jun, Sato, Motoki, Toyoda, Eiji, Isogai, Hiromichi, Izunome, Koji, Sakai, Akira
Published in Japanese Journal of Applied Physics (01.04.2011)
Published in Japanese Journal of Applied Physics (01.04.2011)
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Journal Article
Strain relaxation of patterned Ge and SiGe layers on Si(0 0 1) substrates
Mochizuki, Shogo, Sakai, Akira, Nakatsuka, Osamu, Kondo, Hiroki, Yukawa, Katsunori, Izunome, Koji, Senda, Takeshi, Toyoda, Eiji, Ogawa, Masaki, Zaima, Shigeaki
Published in Semiconductor science and technology (01.01.2007)
Published in Semiconductor science and technology (01.01.2007)
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Conference Proceeding
Crystallinity Investigation of Compositionally Graded SiGe Layers by Synchrotron X-ray Cross-Sectional Diffraction
Senda, Takeshi, Izunome, Koji, Tsusaka, Yoshiyuki, Fukuda, Kazunori, Hayashi, Kazuki, Abe, Maiko, Takahata, Sayuri, Takano, Hidekazu, Kagoshima, Yasushi, Matsui, Junji
Published in Japanese Journal of Applied Physics (01.08.2008)
Published in Japanese Journal of Applied Physics (01.08.2008)
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