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SOMEYA MASASHI, IWASA KIYOAKI, KONO YOSHIHIRO, MORIYAMA WATARU, KONNO HAYATO, NAKAJIMA TAKAO, FUJIO MASAKI
Year of Publication 03.03.2023
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Year of Publication 03.03.2023
Patent
A 19 nm 112.8 mm ^ 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface
Kanda, K., Shibata, N., Hisada, T., Isobe, K., Sato, M., Shimizu, Y., Shimizu, T., Sugimoto, T., Kobayashi, T., Kanagawa, N., Kajitani, Y., Ogawa, T., Iwasa, K., Kojima, M., Suzuki, T., Suzuki, Y., Sakai, S., Fujimura, T., Utsunomiya, Y., Hashimoto, T., Kobayashi, N., Matsumoto, Y., Inoue, S., Honda, Y., Kato, Y., Zaitsu, S., Chibvongodze, H., Watanabe, M., Ding, H., Ookuma, N., Yamashita, R.
Published in IEEE journal of solid-state circuits (01.01.2013)
Published in IEEE journal of solid-state circuits (01.01.2013)
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Journal Article
A 70 nm 16 Gb 16-Level-Cell NAND flash Memory
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Published in IEEE journal of solid-state circuits (01.04.2008)
Published in IEEE journal of solid-state circuits (01.04.2008)
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Journal Article
Conference Proceeding
A 19 nm 112.8 mm 2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface
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Published in IEEE journal of solid-state circuits (01.01.2013)
Published in IEEE journal of solid-state circuits (01.01.2013)
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Journal Article
Semiconductor memory device
Konno, Hayato, Nakajima, Takao, Someya, Tadashi, Fujiu, Masaki, Moriyama, Wataru, Kono, Fumihiro, Iwasa, Kiyoaki
Year of Publication 22.10.2024
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Year of Publication 22.10.2024
Patent
A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface
KANDA, Kazushige, SHIBATA, Noboru, KAJITANI, Yasuyuki, OGAWA, Takeshi, IWASA, Kiyoaki, KOJIMA, Masatsugu, SUZUKI, Toshihiro, SUZUKI, Yuya, SAKAI, Shintaro, FUJIMURA, Tomofumi, UTSUNOMIYA, Yuko, HASHIMOTO, Toshifumi, HISADA, Toshiki, KOBAYASHI, Naoki, MATSUMOTO, Yuuki, INOUE, Satoshi, SUZUKI, Yoshinao, HONDA, Yasuhiko, KATO, Yosuke, ZAITSU, Shingo, CHIBVONGODZE, Hardwell, WATANABE, Mitsuyuki, HONG DING, ISOBE, Katsuaki, OOKUMA, Naoki, YAMASHITA, Ryuji, SATO, Manabu, SHIMIZU, Yui, SHIMIZU, Takahiro, SUGIMOTO, Takahiro, KOBAYASHI, Tomohiro, KANAGAWA, Naoaki
Published in IEEE journal of solid-state circuits (2013)
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Published in IEEE journal of solid-state circuits (2013)
Conference Proceeding
SEMICONDUCTOR MEMORY DEVICE
KONNO, Hayato, FUJIU, Masaki, NAKAJIMA, Takao, SOMEYA, Tadashi, IWASA, Kiyoaki, MORIYAMA, Wataru, KONO, Fumihiro
Year of Publication 23.02.2023
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Year of Publication 23.02.2023
Patent
TWI810780B
KONO, FUMIHIRO, MORIYAMA, WATARU, IWASA, KIYOAKI, KONNO, HAYATO, NAKAJIMA, TAKAO, FUJIU, MASAKI, SOMEYA, TADASHI
Year of Publication 01.08.2023
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Year of Publication 01.08.2023
Patent
Semiconductor memory device
KONO, FUMIHIRO, MORIYAMA, WATARU, IWASA, KIYOAKI, KONNO, HAYATO, NAKAJIMA, TAKAO, FUJIU, MASAKI, SOMEYA, TADASHI
Year of Publication 01.03.2023
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Year of Publication 01.03.2023
Patent
SEMICONDUCTOR MEMORY DEVICE
SOMEYA MASASHI, IWASA KIYOAKI, NAKASHIMA TAKAO, KONO YOSHIHIRO, MORIYAMA WATARU, KONNO HAYATO, FUJIO MASAKI
Year of Publication 24.02.2023
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Year of Publication 24.02.2023
Patent
A 70nm 16Gb 16-level-cell NAND Flash Memory
Shibata, N., Maejima, H., Isobe, K., Iwasa, K., Nakagawa, M., Fujiu, M., Shimizu, T., Honma, M., Hoshi, S., Kawaai, T., Kanebako, K., Yoshikawa, S., Tabata, H., Inoue, A., Takahashi, T., Shano, T., Komatsu, Y., Nagaba, K., Kosakai, M., Motohashi, N., Kanazawa, K., Imamiya, K., Nakai, H.
Published in 2007 IEEE Symposium on VLSI Circuits (01.06.2007)
Published in 2007 IEEE Symposium on VLSI Circuits (01.06.2007)
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Conference Proceeding