Energy distribution of Al2O3/diamond interface states characterized by high temperature capacitance-voltage method
Zhang, Xufang, Matsumoto, Tsubasa, Sakurai, Ukyo, Makino, Toshiharu, Ogura, Masahiko, Yamasaki, Satoshi, Sometani, Mitsuru, Okamoto, Dai, Yano, Hiroshi, Iwamuro, Noriyuki, Inokuma, Takao, Tokuda, Norio
Published in Carbon (New York) (30.10.2020)
Published in Carbon (New York) (30.10.2020)
Get full text
Journal Article
Accurate determination of threshold voltage shift during negative gate bias stress in 4H-SiC MOSFETs by fast on-the-fly method
Sakata, Hiroki, Okamoto, Dai, Sometani, Mitsuru, Okamoto, Mitsuo, Hirai, Hirohisa, Harada, Shinsuke, Hatakeyama, Tetsuo, Yano, Hiroshi, Iwamuro, Noriyuki
Published in Japanese Journal of Applied Physics (01.06.2021)
Published in Japanese Journal of Applied Physics (01.06.2021)
Get full text
Journal Article
Investigation of UIS Capability for −600V Class Vertical SiC p-channel MOSFET
Yao, Kailun, Yano, Hiroshi, Iwamuro, Noriyuki
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Published in 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) (01.05.2019)
Get full text
Conference Proceeding
Impact of oxide thickness on the density distribution of near-interface traps in 4H-SiC MOS capacitors
Zhang, Xufang, Okamoto, Dai, Hatakeyama, Tetsuo, Sometani, Mitsuru, Harada, Shinsuke, Iwamuro, Noriyuki, Yano, Hiroshi
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
Conduction mechanisms of oxide leakage current in p-channel 4H-SiC MOSFETs
Nemoto, Hiroki, Okamoto, Dai, Zhang, Xufang, Sometani, Mitsuru, Okamoto, Mitsuo, Hatakeyama, Tetsuo, Harada, Shinsuke, Iwamuro, Noriyuki, Yano, Hiroshi
Published in Japanese Journal of Applied Physics (01.04.2020)
Published in Japanese Journal of Applied Physics (01.04.2020)
Get full text
Journal Article
Characterization of near-interface traps at 4H-SiC metal-oxide-semiconductor interfaces using modified distributed circuit model
Zhang, Xufang, Okamoto, Dai, Hatakeyama, Tetsuo, Sometani, Mitsuru, Harada, Shinsuke, Kosugi, Ryoji, Iwamuro, Noriyuki, Yano, Hiroshi
Published in Applied physics express (01.06.2017)
Published in Applied physics express (01.06.2017)
Get full text
Journal Article
Experimental and numerical demonstration and optimized methods for SiC trench MOSFET short-circuit capability
Namai, Masaki, Junjie An, Yano, Hiroshi, Iwamuro, Noriyuki
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Published in 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD) (01.05.2017)
Get full text
Conference Proceeding
Analysis of fast and slow responses in AC conductance curves for p-type SiC MOS capacitors
Karamoto, Yuki, Zhang, Xufang, Okamoto, Dai, Sometani, Mitsuru, Hatakeyama, Tetsuo, Harada, Shinsuke, Iwamuro, Noriyuki, Yano, Hiroshi
Published in Japanese Journal of Applied Physics (01.06.2018)
Published in Japanese Journal of Applied Physics (01.06.2018)
Get full text
Journal Article
Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC($000\bar{1}$) Metal--Oxide--Semiconductor Field-Effect Transistors
Okamoto, Mitsuo, Makifuchi, Youichi, Iijima, Miwako, Sakai, Yoshiyuki, Iwamuro, Noriyuki, Kimura, Hiroshi, Fukuda, Kenji, Okumura, Hajime
Published in Applied physics express (01.04.2012)
Published in Applied physics express (01.04.2012)
Get full text
Journal Article
Photoelectron yield spectroscopy and inverse photoemission spectroscopy evaluations of p-type amorphous silicon carbide films prepared using liquid materials
Murakami, Tatsuya, Masuda, Takashi, Inoue, Satoshi, Yano, Hiroshi, Iwamuro, Noriyuki, Shimoda, Tatsuya
Published in AIP advances (01.05.2016)
Published in AIP advances (01.05.2016)
Get full text
Journal Article