Normally Off n-Channel GaN MOSFETs on Si Substrates Using an SAG Technique and Ion Implantation
Kambayashi, H., Niiyama, Y., Ootomo, S., Nomura, T., Iwami, M., Satoh, Y., Kato, S., Yoshida, S.
Published in IEEE electron device letters (01.12.2007)
Published in IEEE electron device letters (01.12.2007)
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Buffer breakdown voltage of AlGaN/GaN HFET on a 4 inch Si(111) substrate grown by MOCVD
Iwami, Masayuki, Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Yoshida, Seikoh
Published in Physica status solidi. C (01.06.2007)
Published in Physica status solidi. C (01.06.2007)
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C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE
Kato, Sadahiro, Satoh, Yoshihiro, Sasaki, Hitoshi, Masayuki, Iwami, Yoshida, Seikoh
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
NITRIDE SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, DIODE AND FIELD EFFECT TRANSISTOR
OOTOMO, SHINYA, IWAMI, MASAYUKI, UMENO, KAZUYUKI, TAKAKI, KEISHI, KOKAWA, TAKUYA
Year of Publication 08.10.2015
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Year of Publication 08.10.2015
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SEMICONDUCTOR LASER ELEMENT
IWAMI, MASAYUKI, IWAI, NORIHIRO, MATSUDA, TAKEYOSHI, ISHIKAWA, TAKUYA, KAJI, EISAKU, KASUKAWA, AKIHIKO, ISHII, HIROTATSU, KAWAKITA, YASUMASA
Year of Publication 17.09.2015
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Year of Publication 17.09.2015
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SEMICONDUCTOR DEVICE
IWAMI, MASAYUKI, IWAI, NORIHIRO, MATSUDA, TAKEYOSHI, ISHIKAWA, TAKUYA, KAJI, EISAKU, KASUKAWA, AKIHIKO, ISHII, HIROTATSU, KAWAKITA, YASUMASA
Year of Publication 17.09.2015
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Year of Publication 17.09.2015
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Investigation of surface defect structure originating in dislocations in AlGaN/GaN epitaxial layer grown on a Si substrate
Sasaki, Hitoshi, Kato, Sadahiro, Matsuda, Takeyoshi, Sato, Yoshihiro, Iwami, Masayuki, Yoshida, Seikoh
Published in Journal of crystal growth (2007)
Published in Journal of crystal growth (2007)
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Conference Proceeding
NITRIDE SEMICONDUCTOR DEVICE, DIODE, AND FIELD-EFFECT TRANSISTOR
RI KO, KAYA HIDESUKE, FURUKAWA TAKUYA, UMENO KAZUYUKI, TAMURA RYOSUKE, IWAMI MASAYUKI, ISHII HIROTATSU
Year of Publication 22.03.2016
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Year of Publication 22.03.2016
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SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME
IWAMI, MASAYUKI, UTSUMI, MAKOTO, UMENO, KAZUYUKI, KATOU, SADAHIRO, KOKAWA, TAKUYA
Year of Publication 22.11.2012
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Year of Publication 22.11.2012
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Application of High-Resolution Film for Lithography to Synchrotron X-Ray Topography
MIZUNO, K, IWAMI, M, HASHIMOTO, E, ITO, K, KINO, T
Published in Japanese Journal of Applied Physics (1994)
Published in Japanese Journal of Applied Physics (1994)
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