Intrinsic gettering of copper in silicon wafers
ISOMAE, Seiichi, ISHIDA, Hidetsugu, ITOGA, Toshihiko, HOZAWA, Kazuyuki
Published in Journal of the Electrochemical Society (01.06.2002)
Published in Journal of the Electrochemical Society (01.06.2002)
Get full text
Journal Article
The Effect of Isopropyl Alcohol Adsorption on the Electrical Characteristics of Thin Oxide
Motai, Kumi, Itoga, Toshihiko, Irie, Takashi
Published in Japanese Journal of Applied Physics (01.03.1998)
Published in Japanese Journal of Applied Physics (01.03.1998)
Get full text
Journal Article
New Technique to Determine Gettering Efficiency of Heavy Metals and Its Application to Carbon-Ion-Implanted Si Epitaxial Wafers
Itoga, Toshihiko, Hozawa, Kazuyuki, Takeda, Kazuo, Isomae, Seiichi, Ohkura, Makoto
Published in Japanese Journal of Applied Physics (01.04.2001)
Published in Japanese Journal of Applied Physics (01.04.2001)
Get full text
Journal Article
Influence of ion-implantation on native oxidation of Si in a clean-room atmosphere
Yano, Fumiko, Hiraoka, Akiko, Itoga, Toshihiko, Kojima, Hisao, Kanehori, Keiichi, Mitsui, Yasuhiro
Published in Applied surface science (01.07.1996)
Published in Applied surface science (01.07.1996)
Get full text
Journal Article
Degradation of n+/p junction characteristics by aluminum contamination
ITOGA, T, KOJIMA, H, HIRAIWA, A, OHKURA, M
Published in Japanese Journal of Applied Physics (01.07.1997)
Published in Japanese Journal of Applied Physics (01.07.1997)
Get full text
Journal Article