Ferroelectric nonvolatile memory technology and its applications
SUMI, T, JUDAI, Y, NASU, T, NAGANO, Y, INOUE, A, MATSUDA, A, FUJI, E, SHIMADA, Y, OTSUKI, T, HIRANO, K, ITO, T, MIKAWA, T, TAKEO, M, AZUMA, M, HAYASHI, S.-I, UEMOTO, Y, ARITA, K
Published in Japanese Journal of Applied Physics (1996)
Published in Japanese Journal of Applied Physics (1996)
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Conference Proceeding
Journal Article
Embedded ferroelectric memory technology with completely encapsulated hydrogen barrier structure : Materials-related manufacturing issues in the nanochip era
NAGANO, Yoshihisa, MIKAWA, Takumi, GOHOU, Yasushi, JUDAI, Yuji, FUJII, Eiji, KUTSUNAI, Toshie, NATSUME, Shinya, TATSUNARI, Toshitaka, ITO, Toyoji, NOMA, Atsushi, NASU, Toru, HAYASHI, Shinichiro, HIRANO, Hiroshige
Published in IEEE transactions on semiconductor manufacturing (2005)
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Published in IEEE transactions on semiconductor manufacturing (2005)
Journal Article
Embedded ferroelectric memory technology with completely encapsulated hydrogen barrier structure
Nagano, Y., Mikawa, T., Kutsunai, T., Natsume, S., Tatsunari, T., Ito, T., Noma, A., Nasu, T., Hayashi, S., Hirano, H., Gohou, Y., Judai, Y., Fujii, E.
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
Published in IEEE transactions on semiconductor manufacturing (01.02.2005)
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Journal Article