LOW VOLTAGE 3 V OPERATION OF FERROELECTRIC MULTI-LAYER STACK MFIS STRUCTURE DEVICE FORMED BY PLASMA PHYSICAL VAPOR DEPOSITION AND OXYGEN RADICAL TREATMENT
TAKAHASHI, ICHIROU, SAKURAI, HIROYUKI, ISOGAI, TATSUFUMI, TERAMOTO, AKINOBU, SUGAWA, SHIGETOSHI, OHMI, TADAHIRO
Published in Integrated ferroelectrics (01.11.2006)
Published in Integrated ferroelectrics (01.11.2006)
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Journal Article
MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr2(Ta1−x,Nbx)2O7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
TAKAHASHI, ICHIROU, SAKURAI, HIROYUKI, ISOGAI, TATSUFUMI, FUNAIWA, KIYOSHI, HIRAYAMA, MASAKI, TERAMOTO, AKINOBU, SUGAWA, SHIGETOSHI, OHMI, TADAHIRO
Published in Integrated ferroelectrics (01.01.2004)
Published in Integrated ferroelectrics (01.01.2004)
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Journal Article
MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr 2 (Ta 1−x ,Nb x ) 2 O 7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
TAKAHASHI, ICHIROU, SAKURAI, HIROYUKI, ISOGAI, TATSUFUMI, FUNAIWA, KIYOSHI, HIRAYAMA, MASAKI, TERAMOTO, AKINOBU, SUGAWA, SHIGETOSHI, OHMI, TADAHIRO
Published in Integrated ferroelectrics (01.01.2004)
Published in Integrated ferroelectrics (01.01.2004)
Get full text
Journal Article